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IRG4PH40UDPBF

Infineon Technologies IRG4PH40UDPBF

Part Number:
IRG4PH40UDPBF
Manufacturer:
Infineon Technologies
Ventron No:
2854643-IRG4PH40UDPBF
Description:
IGBT 1200V 41A 160W TO247AC
ECAD Model:
Datasheet:
IRG4PH40UDPBF

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Specifications
Infineon Technologies IRG4PH40UDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PH40UDPBF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2004
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Additional Feature
    ULTRA FAST SOFT RECOVERY
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    1.2kV
  • Max Power Dissipation
    160W
  • Current Rating
    41A
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    160W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    46 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    59ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    150 ns
  • Collector Emitter Voltage (VCEO)
    3.1V
  • Max Collector Current
    41A
  • Reverse Recovery Time
    63 ns
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    2.43V
  • Turn On Time
    74 ns
  • Test Condition
    800V, 21A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.1V @ 15V, 21A
  • Turn Off Time-Nom (toff)
    750 ns
  • Gate Charge
    86nC
  • Current - Collector Pulsed (Icm)
    82A
  • Td (on/off) @ 25°C
    46ns/97ns
  • Switching Energy
    1.8mJ (on), 1.93mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.3086mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRG4PH40UDPBF Description
The IRG4PH40UDPBF is a 1200V Ultrafast 5 to 40kHz co-pack IGBT with a soft recovery diode. Hard switching process optimized for high operating frequency. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. HEXFRED diodes are optimized for performance and used in bridge configurations. The latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability. The IRG4PH40UDPBF is offered in the TO-247-3 package. It is specified for operation from –55°C to 150°C.

IRG4PH40UDPBF Features
UltraFast Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz   in resonant mode
The new IGBT design provides tighter parameter distribution and higher efficiency than previous   generations
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use    in bridge configurations
Industry-standard TO-247AC package
Lead-Free

IRG4PH40UDPBF Applications
Solar energy
Wind energy
Hydro energy
Tidal energy
Geothermal energy
Biomass energy 
IRG4PH40UDPBF More Descriptions
Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3 Tab) TO-247AC Tube
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:41A; Collector Emitter Saturation Voltage, Vce(sat):3.1V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40UD; Fall Time Max:150ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:59ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Product Comparison
The three parts on the right have similar specifications to IRG4PH40UDPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Current - Collector (Ic) (Max)
    JESD-609 Code
    Terminal Finish
    Terminal Form
    Power Dissipation-Max (Abs)
    Fall Time-Max (tf)
    Supplier Device Package
    View Compare
  • IRG4PH40UDPBF
    IRG4PH40UDPBF
    Infineon Technologies
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Bulk
    2004
    Last Time Buy
    1 (Unlimited)
    3
    Through Hole
    EAR99
    ULTRA FAST SOFT RECOVERY
    Insulated Gate BIP Transistors
    1.2kV
    160W
    41A
    1
    Single
    160W
    COLLECTOR
    Standard
    46 ns
    POWER CONTROL
    59ns
    N-CHANNEL
    150 ns
    3.1V
    41A
    63 ns
    TO-247AC
    1.2kV
    1200V
    2.43V
    74 ns
    800V, 21A, 10 Ω, 15V
    3.1V @ 15V, 21A
    750 ns
    86nC
    82A
    46ns/97ns
    1.8mJ (on), 1.93mJ (off)
    20V
    6V
    20.7mm
    15.87mm
    5.3086mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC15UD
    IRG4BC15UD
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    3
    -
    -
    ULTRA FAST SOFT RECOVERY
    -
    -
    -
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    28ns
    TO-220AB
    -
    600V
    -
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    49W
    14A
    -
    -
    -
    -
    -
    -
    IRG4PH40UDPBF vs IRG4BC15UD
  • IRG4BC30S-S
    IRG4BC30S-S
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    -
    Insulated Gate BIP Transistors
    -
    -
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    -
    -
    -
    600V
    -
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    20V
    6V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SINGLE
    260
    30
    R-PSSO-G2
    -
    SINGLE
    100W
    34A
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    GULL WING
    100W
    590ns
    -
    IRG4PH40UDPBF vs IRG4BC30S-S
  • IRG4BC20K-S
    IRG4BC20K-S
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    600V
    -
    -
    480V, 9A, 50Ohm, 15V
    2.8V @ 15V, 9A
    -
    34nC
    32A
    28ns/150ns
    150μJ (on), 250μJ (off)
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    60W
    16A
    -
    -
    -
    -
    -
    D2PAK
    IRG4PH40UDPBF vs IRG4BC20K-S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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