Infineon Technologies IRG4PF50WDPBF
- Part Number:
- IRG4PF50WDPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854550-IRG4PF50WDPBF
- Description:
- IGBT 900V 51A 200W TO247AC
- ECAD Model:
-
- Datasheet:
- IRG4PF50WDPBF
Infineon Technologies IRG4PF50WDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PF50WDPBF.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1998
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC900V
- Max Power Dissipation200W
- Terminal PositionSINGLE
- Current Rating51A
- Number of Elements1
- Element ConfigurationDual
- Power Dissipation200W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Turn On Delay Time71 ns
- Transistor ApplicationPOWER CONTROL
- Rise Time52ns
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time150 ns
- Collector Emitter Voltage (VCEO)2.7V
- Max Collector Current51A
- Reverse Recovery Time90 ns
- JEDEC-95 CodeTO-247AC
- Collector Emitter Breakdown Voltage900V
- Collector Emitter Saturation Voltage2.25V
- Turn On Time121 ns
- Test Condition720V, 28A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 28A
- Turn Off Time-Nom (toff)460 ns
- Gate Charge160nC
- Current - Collector Pulsed (Icm)204A
- Td (on/off) @ 25°C71ns/150ns
- Switching Energy2.63mJ (on), 1.34mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6V
- Height20.7mm
- Length15.87mm
- Width5.3086mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRG4PF50WDPBF Description
The Infineon Technologies IRG4PF50WDPBF is an insulated gate bipolar transistor with an ultrafast soft recovery diode.
IRG4PF50WDPBF Features
Optimized for use in Welding and Switch Mode
Power Supply applications
Industry benchmark switching losses improve
The efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Industry-standard TO-247 AC package
IRG4PF50WDPBF Applications
Battery protection
SMPS
The Infineon Technologies IRG4PF50WDPBF is an insulated gate bipolar transistor with an ultrafast soft recovery diode.
IRG4PF50WDPBF Features
Optimized for use in Welding and Switch Mode
Power Supply applications
Industry benchmark switching losses improve
The efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Industry-standard TO-247 AC package
IRG4PF50WDPBF Applications
Battery protection
SMPS
IRG4PF50WDPBF More Descriptions
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3 Tab) TO-247AC Tube
900V WARP 20-100 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PF50WDPBF
IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC
Copacked 900V IGBT in a TO-247AC package with ultrafast 20-100 kHz ultrafast, ultrasoft recovery anti-parallel diode, TO247COPAK-3, RoHSInfineon SCT
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.7 V Current release time: 190 ns Power dissipation: 200 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:51A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.25V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cu
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WDPbF; Fall Time Max:190ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:52ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
900V WARP 20-100 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PF50WDPBF
IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC
Copacked 900V IGBT in a TO-247AC package with ultrafast 20-100 kHz ultrafast, ultrasoft recovery anti-parallel diode, TO247COPAK-3, RoHSInfineon SCT
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.7 V Current release time: 190 ns Power dissipation: 200 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:51A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.25V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cu
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WDPbF; Fall Time Max:190ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:52ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
The three parts on the right have similar specifications to IRG4PF50WDPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTurn On Delay TimeTransistor ApplicationRise TimePolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-609 CodeTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeFall Time-Max (tf)Supplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Surface MountQualification StatusConfigurationView Compare
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IRG4PF50WDPBF14 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTube1998Last Time Buy1 (Unlimited)3Through HoleEAR99LOW CONDUCTION LOSSInsulated Gate BIP Transistors900V200WSINGLE51A1Dual200WCOLLECTORStandard71 nsPOWER CONTROL52nsN-CHANNEL150 ns2.7V51A90 nsTO-247AC900V2.25V121 ns720V, 28A, 5 Ω, 15V2.7V @ 15V, 28A460 ns160nC204A71ns/150ns2.63mJ (on), 1.34mJ (off)20V6V20.7mm15.87mm5.3086mmNo SVHCNoROHS3 CompliantLead Free--------------- -
8 WeeksSurface Mount, Through HoleSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~150°C TJTube2004Last Time Buy1 (Unlimited)2-EAR99LOW CONDUCTION LOSSInsulated Gate BIP Transistors600V160WSINGLE40A1Dual160WCOLLECTORStandard27 nsPOWER CONTROL23nsN-CHANNEL100 ns2.5V40A--600V2.05V48 ns480V, 20A, 10 Ω, 15V2.5V @ 15V, 20A294 ns98nC160A27ns/100ns110μJ (on), 230μJ (off)20V6V4.83mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Freee3Matte Tin (Sn) - with Nickel (Ni) barrierGULL WING26030R-PSSO-G2110ns-------
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTube2000Obsolete1 (Unlimited)-------------Standard------------480V, 9A, 50Ohm, 15V2.8V @ 15V, 9A-34nC32A28ns/150ns150μJ (on), 250μJ (off)-------Non-RoHS Compliant--------D2PAK60W600V16A---
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--Through HoleTO-220-3-SILICON-55°C~150°C TJTube2000Obsolete1 (Unlimited)3--ULTRA FAST SOFT RECOVERY---SINGLE-1--COLLECTORStandard-POWER CONTROL-N-CHANNEL---37nsTO-220AB--63 ns480V, 9A, 50 Ω, 15V2V @ 15V, 9A610 ns27nC64A43ns/240ns250μJ (on), 640μJ (off)-------Non-RoHS Compliant----NOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3--60W600V16ANONot QualifiedSINGLE WITH BUILT-IN DIODE
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