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IRG4PC60UPBF

Infineon Technologies IRG4PC60UPBF

Part Number:
IRG4PC60UPBF
Manufacturer:
Infineon Technologies
Ventron No:
2494865-IRG4PC60UPBF
Description:
IGBT 600V 75A 520W TO247AC
ECAD Model:
Datasheet:
IRG4PC60UPBF

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Specifications
Infineon Technologies IRG4PC60UPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PC60UPBF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2000
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    520W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    75A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    520W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    39 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    42ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    200 ns
  • Collector Emitter Voltage (VCEO)
    2V
  • Max Collector Current
    75A
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2V
  • Turn On Time
    78 ns
  • Test Condition
    480V, 40A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 40A
  • Turn Off Time-Nom (toff)
    460 ns
  • Gate Charge
    310nC
  • Current - Collector Pulsed (Icm)
    300A
  • Td (on/off) @ 25°C
    39ns/200ns
  • Switching Energy
    280μJ (on), 1.1mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Height
    20.701mm
  • Length
    15.875mm
  • Width
    5.3086mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
The IRG4PC60UPBF is a 600V Ultrafast IGBT with a frequency range of 8 to 60kHz. The hard switching technique is designed to operate at a high frequency. The IGBT architecture of Generation 4 has a narrower parameter distribution and is more efficient. When utilized with the IR HEXFRED and IR Fred companion diodes, it gives the best results. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed.

Features
Industry standard TO-247AC package
Lead-Free
UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency
IGBT's optimized for specified application conditions
Designed for best performance when used with IR Hexfred & IR Fred companion diodes
Generation 4 IGBT's offer highest efficiency available

Applications
Power Management
Motor Drive & Control
AC and DC Motor Drives Offering Speed Control
Chopper and Inverters
Solar Inverters
IRG4PC60UPBF More Descriptions
Trans IGBT Chip N-CH 600V 75A 520000mW 3-Pin(3 Tab) TO-247AC Tube
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHSInfineon SCT
IGBT, 600V, 75A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:75A; Voltage, Vce Sat Max:2V; Power Dissipation:520W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:300A; Power, Pd:520W; Time, Fall Max:100ns; Time, Rise:42ns
Product Comparison
The three parts on the right have similar specifications to IRG4PC60UPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Terminal Position
    Terminal Form
    JESD-30 Code
    Configuration
    Power - Max
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Additional Feature
    Fall Time-Max (tf)
    Radiation Hardening
    Supplier Device Package
    View Compare
  • IRG4PC60UPBF
    IRG4PC60UPBF
    Infineon Technologies
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Bulk
    2000
    Last Time Buy
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    600V
    520W
    NOT SPECIFIED
    75A
    NOT SPECIFIED
    Not Qualified
    1
    Single
    520W
    COLLECTOR
    Standard
    39 ns
    POWER CONTROL
    42ns
    N-CHANNEL
    200 ns
    2V
    75A
    TO-247AC
    600V
    2V
    78 ns
    480V, 40A, 5 Ω, 15V
    2V @ 15V, 40A
    460 ns
    310nC
    300A
    39ns/200ns
    280μJ (on), 1.1mJ (off)
    20V
    6V
    20.701mm
    15.875mm
    5.3086mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC20FD-STRR
    IRG4BC20FD-STRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    260
    -
    30
    Not Qualified
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    -
    -
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    e3
    MATTE TIN OVER NICKEL
    SINGLE
    GULL WING
    R-PSSO-G2
    SINGLE WITH BUILT-IN DIODE
    60W
    37ns
    600V
    16A
    -
    -
    -
    -
    IRG4PC60UPBF vs IRG4BC20FD-STRR
  • IRG4BC40W-SPBF
    IRG4BC40W-SPBF
    Infineon Technologies
    8 Weeks
    Surface Mount, Through Hole
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    Last Time Buy
    1 (Unlimited)
    2
    EAR99
    Insulated Gate BIP Transistors
    600V
    160W
    260
    40A
    30
    -
    1
    Dual
    160W
    COLLECTOR
    Standard
    27 ns
    POWER CONTROL
    23ns
    N-CHANNEL
    100 ns
    2.5V
    40A
    -
    600V
    2.05V
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    20V
    6V
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    GULL WING
    R-PSSO-G2
    -
    -
    -
    -
    -
    LOW CONDUCTION LOSS
    110ns
    No
    -
    IRG4PC60UPBF vs IRG4BC40W-SPBF
  • IRG4BC20K-S
    IRG4BC20K-S
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    480V, 9A, 50Ohm, 15V
    2.8V @ 15V, 9A
    -
    34nC
    32A
    28ns/150ns
    150μJ (on), 250μJ (off)
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    60W
    -
    600V
    16A
    -
    -
    -
    D2PAK
    IRG4PC60UPBF vs IRG4BC20K-S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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