Infineon Technologies IRG4PC50UD-MP
- Part Number:
- IRG4PC50UD-MP
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497093-IRG4PC50UD-MP
- Description:
- IGBT 600V 55A 200W TO247AC
- Datasheet:
- IRG4PC50UD-MP
Infineon Technologies IRG4PC50UD-MP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PC50UD-MP.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247AC
- PackagingBulk
- SeriesHEXFRED®
- Published2000
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation200W
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max200W
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current55A
- Reverse Recovery Time75 ns
- Collector Emitter Breakdown Voltage600V
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)55A
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 27A
- Gate Charge270nC
- Current - Collector Pulsed (Icm)220A
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRG4PC50UD-MP Description
IRG4PC50UD-MP is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, >200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4PC50UD-MP IGBT ensures lower losses than MOSFET's conduction and Diode losses.
IRG4PC50UD-MP Features
Industry-standard TO-247AC packages Extremely tight Vce(on) distribution Tighter parameter distribution Highest efficiencies available
IRG4PC50UD-MP Applications
Industrial motor drive Solar inverters Welding
IRG4PC50UD-MP is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, >200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4PC50UD-MP IGBT ensures lower losses than MOSFET's conduction and Diode losses.
IRG4PC50UD-MP Features
Industry-standard TO-247AC packages Extremely tight Vce(on) distribution Tighter parameter distribution Highest efficiencies available
IRG4PC50UD-MP Applications
Industrial motor drive Solar inverters Welding
IRG4PC50UD-MP More Descriptions
Trans IGBT Chip N-CH 600V 55A 3-Pin TO-247AC Tube
IGBT 600V 55A 200W TO247AC
TUBE / IGBT COPAK-247
FIXED IND 43NH 100MA 3.6 OHM SMD
IGBT 600V 55A 200W TO247AC
TUBE / IGBT COPAK-247
FIXED IND 43NH 100MA 3.6 OHM SMD
The three parts on the right have similar specifications to IRG4PC50UD-MP.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackagePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationElement ConfigurationInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Vce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Radiation HardeningRoHS StatusSurface MountTransistor Element MaterialOperating TemperatureJESD-609 CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeTurn On TimeTest ConditionTurn Off Time-Nom (toff)Td (on/off) @ 25°CSwitching EnergyPbfree CodeECCN CodeBase Part NumberMax Breakdown VoltageSubcategoryPower Dissipation-Max (Abs)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)View Compare
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IRG4PC50UD-MP20 WeeksThrough HoleThrough HoleTO-247-33TO-247ACBulkHEXFRED®2000Obsolete1 (Unlimited)150°C-55°C200WSingleStandard200W2V55A75 ns600V600V55A2V @ 15V, 27A270nC220ANoRoHS Compliant--------------------------------
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--Tape & Reel (TR)-2001Obsolete1 (Unlimited)----Standard49W--28ns-600V14A2.4V @ 15V, 7.8A23nC42A-Non-RoHS CompliantYESSILICON-55°C~150°C TJe32MATTE TINSINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORPOWER CONTROLN-CHANNEL37 ns480V, 7.8A, 75 Ω, 15V400 ns17ns/160ns240μJ (on), 260μJ (off)---------
-
11 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-Tape & Reel (TR)-2000Obsolete1 (Unlimited)--100WSingleStandard100W1.6V34A-600V--1.6V @ 15V, 18A50nC68ANoRoHS Compliant-SILICON-55°C~150°C TJ-2--GULL WING--R-PSSO-G2-1-COLLECTORPOWER CONTROLN-CHANNEL40 ns480V, 18A, 23 Ω, 15V1550 ns22ns/540ns260μJ (on), 3.45mJ (off)yesEAR99IRG4BC30S-SPBF600V-----
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--Tube-2000Obsolete1 (Unlimited)----Standard100W----600V34A1.6V @ 15V, 18A50nC68A-Non-RoHS CompliantYESSILICON-55°C~150°C TJe32Matte Tin (Sn) - with Nickel (Ni) barrierSINGLEGULL WING26030R-PSSO-G2-1SINGLECOLLECTORPOWER CONTROLN-CHANNEL40 ns480V, 18A, 23 Ω, 15V1550 ns22ns/540ns260μJ (on), 3.45mJ (off)-EAR99--Insulated Gate BIP Transistors100W20V6V590ns
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