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IRG4PC50SPBF

Infineon Technologies IRG4PC50SPBF

Part Number:
IRG4PC50SPBF
Manufacturer:
Infineon Technologies
Ventron No:
2494642-IRG4PC50SPBF
Description:
IGBT 600V 70A 200W TO247AC
ECAD Model:
Datasheet:
IRG4PC50SPBF

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Specifications
Infineon Technologies IRG4PC50SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PC50SPBF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2000
  • JESD-609 Code
    e3
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    200W
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    250
  • Current Rating
    70A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Element Configuration
    Dual
  • Power Dissipation
    200W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    33 ns
  • Rise Time
    30ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    650 ns
  • Collector Emitter Voltage (VCEO)
    1.36V
  • Max Collector Current
    70A
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.36V
  • Turn On Time
    62 ns
  • Test Condition
    480V, 41A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.36V @ 15V, 41A
  • Turn Off Time-Nom (toff)
    1700 ns
  • Gate Charge
    180nC
  • Current - Collector Pulsed (Icm)
    140A
  • Td (on/off) @ 25°C
    33ns/650ns
  • Switching Energy
    720μJ (on), 8.27mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    600ns
  • Height
    20.2946mm
  • Length
    15.875mm
  • Width
    5.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRG4PC50SPBF Description
The  Infineon Technologies IRG4PC50SPBF  is an N-Channel Standard Speed IGBT.

IRG4PC50SPBF Features
Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry-standard TO-247AC package
Lead-Free

IRG4PC50SPBF Applications
General Usage

IRG4PC50SPBF More Descriptions
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3 Tab) TO-247AC Tube
IRG4PC50SPBF Series 600 V 41 A N-Channel Standard Speed IGBT - TO-247AC
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHSInfineon SCT
In a Tube of 25, Infineon IRG4PC50SPBF IGBT, 70 A 600 V, 3-Pin TO-247AC
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.36 V Current release time: 620 ns Power dissipation: 200 W
IGBT, 600V, 70A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:1.36V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:140A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:600ns; Time, Rise:30ns; Transistors, No. of:1
Product Comparison
The three parts on the right have similar specifications to IRG4PC50SPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Power - Max
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Pbfree Code
    Terminal Form
    Base Part Number
    JESD-30 Code
    Transistor Application
    Max Breakdown Voltage
    Additional Feature
    View Compare
  • IRG4PC50SPBF
    IRG4PC50SPBF
    Infineon Technologies
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Bulk
    2000
    e3
    Last Time Buy
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Insulated Gate BIP Transistors
    600V
    200W
    SINGLE
    250
    70A
    30
    1
    Dual
    200W
    COLLECTOR
    Standard
    33 ns
    30ns
    N-CHANNEL
    650 ns
    1.36V
    70A
    TO-247AC
    600V
    1.36V
    62 ns
    480V, 41A, 5 Ω, 15V
    1.36V @ 15V, 41A
    1700 ns
    180nC
    140A
    33ns/650ns
    720μJ (on), 8.27mJ (off)
    20V
    6V
    600ns
    20.2946mm
    15.875mm
    5.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC10SD-L
    IRG4BC10SD-L
    Infineon Technologies
    -
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~150°C TJ
    Tube
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    480V, 8A, 100 Ω, 15V
    1.8V @ 15V, 8A
    -
    15nC
    18A
    76ns/815ns
    310μJ (on), 3.28mJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    38W
    28ns
    600V
    14A
    -
    -
    -
    -
    -
    -
    -
    IRG4PC50SPBF vs IRG4BC10SD-L
  • IRG4BC30S-STRLP
    IRG4BC30S-STRLP
    Infineon Technologies
    11 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    -
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    -
    -
    100W
    -
    -
    -
    -
    1
    Single
    -
    COLLECTOR
    Standard
    -
    -
    N-CHANNEL
    -
    1.6V
    34A
    -
    600V
    -
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    -
    -
    -
    -
    -
    -
    -
    No
    RoHS Compliant
    -
    100W
    -
    -
    -
    yes
    GULL WING
    IRG4BC30S-SPBF
    R-PSSO-G2
    POWER CONTROL
    600V
    -
    IRG4PC50SPBF vs IRG4BC30S-STRLP
  • IRG4BC40W-SPBF
    IRG4BC40W-SPBF
    Infineon Technologies
    8 Weeks
    Surface Mount, Through Hole
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    Last Time Buy
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Insulated Gate BIP Transistors
    600V
    160W
    SINGLE
    260
    40A
    30
    1
    Dual
    160W
    COLLECTOR
    Standard
    27 ns
    23ns
    N-CHANNEL
    100 ns
    2.5V
    40A
    -
    600V
    2.05V
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    20V
    6V
    110ns
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    GULL WING
    -
    R-PSSO-G2
    POWER CONTROL
    -
    LOW CONDUCTION LOSS
    IRG4PC50SPBF vs IRG4BC40W-SPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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