Infineon Technologies IRG4PC40UDPBF

Name: IRG4PC40UDPBF
Brand: Infineon Technologies
SKU: 2854575-IRG4PC40UDPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG4PC40UDPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2854575-IRG4PC40UDPBF

Description:: IGBT 600V 40A 160W TO247AC

ECAD Model:

Datasheet:: IRG4PC40UDPBF

Specifications

Infineon Technologies IRG4PC40UDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PC40UDPBF.

Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
1998
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
160W
Current Rating
40A
Number of Elements
1
Element Configuration
Single
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
54 ns
Transistor Application
POWER CONTROL
Rise Time
57ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
110 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
40A
Reverse Recovery Time
42 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.15V
Turn On Time
92 ns
Test Condition
480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 20A
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
40A
Turn Off Time-Nom (toff)
330 ns
Gate Charge
100nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
54ns/110ns
Switching Energy
710μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
120ns
Height
24.6mm
Length
15.875mm
Width
5.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRG4PC40UDPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRG4PC40UDPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRG4PC40UDPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IRG4PC40UDPBF More Descriptions

Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3 Tab) TO-247AC Tube
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC40UDPBF
IRG4PC40U Series 600 V 20 A N-Channel UltraFast Speed IGBT - TO-247AC
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.72 V Current release time: 80 ns Power dissipation: 160 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:40A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:40A; Voltage, Vce Sat Max:2.4V; Power Dissipation:160W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:160A; Device Marking:IRG4PC40UDPBF; No. of Pins:3; Power, Pd:160W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:120ns; Time, Fall Max:80ns; Time, Rise:57ns; Transistors, No. of:1

Product Comparison

The three parts on the right have similar specifications to IRG4PC40UDPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Max Junction Temperature (Tj)

Continuous Collector Current

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

JESD-609 Code

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Additional Feature

View Compare
IRG4PC40UDPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Bulk

1998

Last Time Buy

1 (Unlimited)

3

Through Hole

EAR99

Insulated Gate BIP Transistors

600V

160W

40A

1

Single

160W

COLLECTOR

Standard

54 ns

POWER CONTROL

57ns

N-CHANNEL

110 ns

600V

40A

42 ns

TO-247AC

600V

2.15V

92 ns

480V, 20A, 10 Ω, 15V

2.1V @ 15V, 20A

150°C

40A

330 ns

100nC

160A

54ns/110ns

710μJ (on), 350μJ (off)

20V

6V

120ns

24.6mm

15.875mm

5.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRG4BC20FD-STRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2000

Obsolete

1 (Unlimited)

2

-

-

-

-

-

-

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

-

-

37ns

-

-

-

63 ns

480V, 9A, 50 Ω, 15V

2V @ 15V, 9A

-

-

610 ns

27nC

64A

43ns/240ns

250μJ (on), 640μJ (off)

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

e3

MATTE TIN OVER NICKEL

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

60W

600V

16A

-

IRG4PC40UDPBF vs IRG4BC20FD-STRR
IRG4BC40W-SPBF

Infineon Technologies

8 Weeks

Surface Mount, Through Hole

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tube

2004

Last Time Buy

1 (Unlimited)

2

-

EAR99

Insulated Gate BIP Transistors

600V

160W

40A

1

Dual

160W

COLLECTOR

Standard

27 ns

POWER CONTROL

23ns

N-CHANNEL

100 ns

2.5V

40A

-

-

600V

2.05V

48 ns

480V, 20A, 10 Ω, 15V

2.5V @ 15V, 20A

-

-

294 ns

98nC

160A

27ns/100ns

110μJ (on), 230μJ (off)

20V

6V

110ns

4.83mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

e3

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

GULL WING

260

30

R-PSSO-G2

-

-

-

-

-

LOW CONDUCTION LOSS

IRG4PC40UDPBF vs IRG4BC40W-SPBF
IRG4BC20FD

Infineon Technologies

-

-

Through Hole

TO-220-3

-

SILICON

-55°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

3

-

-

-

-

-

-

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

-

-

37ns

TO-220AB

-

-

63 ns

480V, 9A, 50 Ω, 15V

2V @ 15V, 9A

-

-

610 ns

27nC

64A

43ns/240ns

250μJ (on), 640μJ (off)

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

-

-

SINGLE

-

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

60W

600V

16A

ULTRA FAST SOFT RECOVERY

IRG4PC40UDPBF vs IRG4BC20FD