Infineon Technologies IRG4PC40SPBF

Name: IRG4PC40SPBF
Brand: Infineon Technologies
SKU: 3587192-IRG4PC40SPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG4PC40SPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3587192-IRG4PC40SPBF

Description:: IGBT 600V 60A 160W TO247AC

ECAD Model:

Datasheet:: IRG4PC40SPBF

Specifications

Infineon Technologies IRG4PC40SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PC40SPBF.

Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
160W
Terminal Position
SINGLE
Current Rating
60A
Number of Elements
1
Element Configuration
Dual
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
22 ns
Rise Time
18ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
650 ns
Collector Emitter Voltage (VCEO)
1.5V
Max Collector Current
60A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.5V
Turn On Time
44 ns
Test Condition
480V, 31A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.5V @ 15V, 31A
Turn Off Time-Nom (toff)
1940 ns
Gate Charge
100nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
22ns/650ns
Switching Energy
450μJ (on), 6.5mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
570ns
Height
20.7mm
Length
15.87mm
Width
5.3086mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRG4PC40SPBF Description IRG4PC40SPBF Optimised IGBTs are developed for medium frequency applications with fast response and offer the maximum efficiency possible to the customer. Infineon Technologies uses FRED diodes that have been optimized for use with IRG4PC40SPBF IGBTs.
IRG4PC40SPBF Features Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry-standard TO-247AC package
Lead-Free
IRG4PC40SPBF Applications Large Solenoids
Tesla Coils
Induction Heating
Microwave Oven
Converters or Inverter circuits

IRG4PC40SPBF More Descriptions

IRG4PC40SPbF Series 600 V 31 A N-Channel Standard Speed IGBT - TO-220AC
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3 Tab) TO-247AC Tube
600V DC-1 KHZ (STANDARD) DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC40SPBF
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 940 ns Power dissipation: 160 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):1.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, 600V, 60A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Current Temperature:25°C; Device Marking:IRG4PC40SPbF; Fall Time Max:380ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Product Comparison

The three parts on the right have similar specifications to IRG4PC40SPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

JESD-609 Code

Terminal Finish

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Power - Max

Transistor Application

Reverse Recovery Time

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Power Dissipation-Max (Abs)

Additional Feature

View Compare
IRG4PC40SPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

2000

Last Time Buy

1 (Unlimited)

3

Through Hole

EAR99

Insulated Gate BIP Transistors

600V

160W

SINGLE

60A

1

Dual

160W

COLLECTOR

Standard

22 ns

18ns

N-CHANNEL

650 ns

1.5V

60A

TO-247AC

600V

1.5V

44 ns

480V, 31A, 10 Ω, 15V

1.5V @ 15V, 31A

1940 ns

100nC

120A

22ns/650ns

450μJ (on), 6.5mJ (off)

20V

6V

570ns

20.7mm

15.87mm

5.3086mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRG4BC20FD-STRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2000

Obsolete

1 (Unlimited)

2

-

-

-

-

-

SINGLE

-

1

-

-

COLLECTOR

Standard

-

-

N-CHANNEL

-

-

-

-

-

-

63 ns

480V, 9A, 50 Ω, 15V

2V @ 15V, 9A

610 ns

27nC

64A

43ns/240ns

250μJ (on), 640μJ (off)

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

e3

MATTE TIN OVER NICKEL

GULL WING

260

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

60W

POWER CONTROL

37ns

600V

16A

-

-

IRG4PC40SPBF vs IRG4BC20FD-STRR
IRG4BC30S-S

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

2

-

EAR99

Insulated Gate BIP Transistors

-

-

SINGLE

-

1

-

-

COLLECTOR

Standard

-

-

N-CHANNEL

-

-

-

-

-

-

40 ns

480V, 18A, 23 Ω, 15V

1.6V @ 15V, 18A

1550 ns

50nC

68A

22ns/540ns

260μJ (on), 3.45mJ (off)

20V

6V

590ns

-

-

-

-

-

Non-RoHS Compliant

-

YES

e3

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

260

30

R-PSSO-G2

-

SINGLE

100W

POWER CONTROL

-

600V

34A

100W

-

IRG4PC40SPBF vs IRG4BC30S-S
IRG4BC40W-SPBF

Infineon Technologies

8 Weeks

Surface Mount, Through Hole

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tube

2004

Last Time Buy

1 (Unlimited)

2

-

EAR99

Insulated Gate BIP Transistors

600V

160W

SINGLE

40A

1

Dual

160W

COLLECTOR

Standard

27 ns

23ns

N-CHANNEL

100 ns

2.5V

40A

-

600V

2.05V

48 ns

480V, 20A, 10 Ω, 15V

2.5V @ 15V, 20A

294 ns

98nC

160A

27ns/100ns

110μJ (on), 230μJ (off)

20V

6V

110ns

4.83mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

e3

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

260

30

R-PSSO-G2

-

-

-

POWER CONTROL

-

-

-

-

LOW CONDUCTION LOSS

IRG4PC40SPBF vs IRG4BC40W-SPBF