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IRG4PC30WPBF

Infineon Technologies IRG4PC30WPBF

Part Number:
IRG4PC30WPBF
Manufacturer:
Infineon Technologies
Ventron No:
2494701-IRG4PC30WPBF
Description:
IGBT 600V 23A 100W TO247AC
ECAD Model:
Datasheet:
IRG4PC30WPBF

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Specifications
Infineon Technologies IRG4PC30WPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PC30WPBF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2000
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    100W
  • Terminal Position
    SINGLE
  • Current Rating
    23A
  • Number of Elements
    1
  • Element Configuration
    Dual
  • Power Dissipation
    100W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Rise Time
    16ns
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.7V
  • Max Collector Current
    23A
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.7V
  • Turn On Time
    41 ns
  • Test Condition
    480V, 12A, 23 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 12A
  • Turn Off Time-Nom (toff)
    300 ns
  • Gate Charge
    51nC
  • Current - Collector Pulsed (Icm)
    92A
  • Td (on/off) @ 25°C
    25ns/99ns
  • Switching Energy
    130μJ (on), 130μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    100ns
  • Height
    20.2946mm
  • Length
    15.875mm
  • Width
    5.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
Description
The IRG4PC30WPBF is an Insulated Gate Bipolar Transistor (IGBT). An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

Features
● 50％ reduction of Eoff parameter ● Low IGBT conduction losses ● Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability ● Lead-Free ● Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications ● Industry-benchmark switching losses improve efficienty of all power supply topologies

Applications
● Switched-mode power supplies ● Traction motor control ● Induction heating ● AC and DC motor drives ● Solar inverters
IRG4PC30WPBF More Descriptions
IRG4PC30WPbF Series 600 V 23 A Insulated Gate Bipolar Transistor - TO247AC
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:23A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
IGBT, 600V, 23A, TO-247AC; DC Collector Current:23A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:23A; Current Temperature:25°C; Device Marking:IRG4PC30WPbF; Fall Time Max:67ns; Fall Time tf:67ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:92A; Rise Time:16ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Product Comparison
The three parts on the right have similar specifications to IRG4PC30WPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Turn On Delay Time
    Turn-Off Delay Time
    View Compare
  • IRG4PC30WPBF
    IRG4PC30WPBF
    Infineon Technologies
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    SILICON
    -55°C~150°C TJ
    Bulk
    2000
    Obsolete
    1 (Unlimited)
    3
    Through Hole
    EAR99
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    600V
    100W
    SINGLE
    23A
    1
    Dual
    100W
    COLLECTOR
    Standard
    POWER CONTROL
    16ns
    N-CHANNEL
    2.7V
    23A
    TO-247AC
    600V
    2.7V
    41 ns
    480V, 12A, 23 Ω, 15V
    2.7V @ 15V, 12A
    300 ns
    51nC
    92A
    25ns/99ns
    130μJ (on), 130μJ (off)
    20V
    6V
    100ns
    20.2946mm
    15.875mm
    5.3mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC20FD-STRR
    IRG4BC20FD-STRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    -
    -
    SINGLE
    -
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    -
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    e3
    MATTE TIN OVER NICKEL
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    60W
    37ns
    600V
    16A
    -
    -
    IRG4PC30WPBF vs IRG4BC20FD-STRR
  • IRG4BC40W-SPBF
    IRG4BC40W-SPBF
    Infineon Technologies
    8 Weeks
    Surface Mount, Through Hole
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    Last Time Buy
    1 (Unlimited)
    2
    -
    EAR99
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    600V
    160W
    SINGLE
    40A
    1
    Dual
    160W
    COLLECTOR
    Standard
    POWER CONTROL
    23ns
    N-CHANNEL
    2.5V
    40A
    -
    600V
    2.05V
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    20V
    6V
    110ns
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    GULL WING
    260
    30
    R-PSSO-G2
    -
    -
    -
    -
    -
    -
    27 ns
    100 ns
    IRG4PC30WPBF vs IRG4BC40W-SPBF
  • IRG4BC20FD
    IRG4BC20FD
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    3
    -
    -
    ULTRA FAST SOFT RECOVERY
    -
    -
    -
    SINGLE
    -
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    TO-220AB
    -
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    60W
    37ns
    600V
    16A
    -
    -
    IRG4PC30WPBF vs IRG4BC20FD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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