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IRG4IBC30KDPBF

Infineon Technologies IRG4IBC30KDPBF

Part Number:
IRG4IBC30KDPBF
Manufacturer:
Infineon Technologies
Ventron No:
2494797-IRG4IBC30KDPBF
Description:
IGBT 600V 17A 45W TO220FP
ECAD Model:
Datasheet:
IRG4IBC30KDPBF

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Specifications
Infineon Technologies IRG4IBC30KDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4IBC30KDPBF.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2010
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    ULTRA FAST SOFT RECOVERY
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    45W
  • Current Rating
    17A
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    45W
  • Case Connection
    ISOLATED
  • Input Type
    Standard
  • Turn On Delay Time
    60 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    42ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    160 ns
  • Collector Emitter Voltage (VCEO)
    2.7V
  • Max Collector Current
    17A
  • Reverse Recovery Time
    42 ns
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.7V
  • Turn On Time
    100 ns
  • Test Condition
    480V, 16A, 23 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 16A
  • Turn Off Time-Nom (toff)
    370 ns
  • Gate Charge
    67nC
  • Current - Collector Pulsed (Icm)
    34A
  • Td (on/off) @ 25°C
    60ns/160ns
  • Switching Energy
    600μJ (on), 580μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    120ns
  • Height
    16.129mm
  • Length
    10.7442mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRG4IBC30KDPBF Description
IRG4IBC30KDPBF is a transistor that has been designed to handle more power than an industry-standard IGBT.
IRG4IBC30KDPBF Features   ? High switching speed optimized for up to 25kHz with low Vgi(on) ? Short circuit Rat ing IHps @ I25°C, Vue. a I5V
? Gen arati on 4 IGBT desig n provides tighter parameter distribution and higher efficiency.
? IGBT co-packaged with HiXPRihTW ultrafast, ultra-soft-recovery and ti-parallel diodes for use in bridge configurations.

IRG4IBC30KDPBF More Descriptions
IRG4IBC30KDPBF Series 600 V 17 A N-Channel Ultrafast IGBT- TO-220
Trans IGBT Chip N-CH 600V 17A 45000mW 3-Pin(3 Tab) TO-220AB Full-Pak Tube
Copacked 600V IGBT in a TO-220 FullPak package with ultrafast 8-25 kHz ultrafast, ultrasoft recovery anti-parallel diode, FULLPAK220-3COPAK, RoHSInfineon SCT
IGBT, 600V, 17A, TO-220FP; Transistor type:IGBT; Voltage, Vces:600V; Current, Ic continuous a max:17A; Voltage, Vce sat max:2.7V; Power dissipation:45W; Case style:TO-220FP; Current, Icm pulsed:34A; Power, Pd:45W; Termination Type:Through Hole; Time, fall:120ns; Time, fall max:120ns; Time, rise:42ns; Transistor polarity:N; Voltage, Vceo:600V
Product Comparison
The three parts on the right have similar specifications to IRG4IBC30KDPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    View Compare
  • IRG4IBC30KDPBF
    IRG4IBC30KDPBF
    Infineon Technologies
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2010
    Last Time Buy
    1 (Unlimited)
    3
    EAR99
    ULTRA FAST SOFT RECOVERY
    Insulated Gate BIP Transistors
    600V
    45W
    17A
    1
    Single
    45W
    ISOLATED
    Standard
    60 ns
    POWER CONTROL
    42ns
    N-CHANNEL
    160 ns
    2.7V
    17A
    42 ns
    TO-220AB
    600V
    2.7V
    100 ns
    480V, 16A, 23 Ω, 15V
    2.7V @ 15V, 16A
    370 ns
    67nC
    34A
    60ns/160ns
    600μJ (on), 580μJ (off)
    20V
    6V
    120ns
    16.129mm
    10.7442mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC20FD-STRR
    IRG4BC20FD-STRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    -
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    37ns
    -
    -
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    e3
    MATTE TIN OVER NICKEL
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    60W
    600V
    16A
    IRG4IBC30KDPBF vs IRG4BC20FD-STRR
  • IRG4BC40W-SPBF
    IRG4BC40W-SPBF
    Infineon Technologies
    8 Weeks
    Surface Mount, Through Hole
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    Last Time Buy
    1 (Unlimited)
    2
    EAR99
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    600V
    160W
    40A
    1
    Dual
    160W
    COLLECTOR
    Standard
    27 ns
    POWER CONTROL
    23ns
    N-CHANNEL
    100 ns
    2.5V
    40A
    -
    -
    600V
    2.05V
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    20V
    6V
    110ns
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    -
    -
    -
    -
    -
    IRG4IBC30KDPBF vs IRG4BC40W-SPBF
  • IRG4BC20FD
    IRG4BC20FD
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    3
    -
    ULTRA FAST SOFT RECOVERY
    -
    -
    -
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    37ns
    TO-220AB
    -
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    -
    -
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    60W
    600V
    16A
    IRG4IBC30KDPBF vs IRG4BC20FD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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