Infineon Technologies IRG4IBC20UDPBF
- Part Number:
- IRG4IBC20UDPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3554838-IRG4IBC20UDPBF
- Description:
- IGBT 600V 11.4A 34W TO220FP
- ECAD Model:
-
- Datasheet:
- IRG4IBC20UDPBF
Infineon Technologies IRG4IBC20UDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4IBC20UDPBF.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.299997g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2003
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation34W
- Current Rating11.4A
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation34W
- Case ConnectionISOLATED
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Rise Time17ns
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.1V
- Max Collector Current11.4A
- Reverse Recovery Time37 ns
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.1V
- Turn On Time55 ns
- Test Condition480V, 6.5A, 50 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 6.5A
- Turn Off Time-Nom (toff)320 ns
- Gate Charge27nC
- Current - Collector Pulsed (Icm)52A
- Td (on/off) @ 25°C39ns/93ns
- Switching Energy160μJ (on), 130μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6V
- Fall Time-Max (tf)170ns
- Height16.129mm
- Length10.7442mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRG4IBC20UDPBF Description
BIPOLAR TRANSISTOR WITH NSULATED GATE DIODE OF ULTRAFAST SOFT RECOVERY
IRG4IBC20UDPBF Features
Insulation voltage of.5kV, 60s
Heatsink to creapage distance: 4.8 mm
UltraFast: Designed to operate at high frequencies Hard switching at 8–40 kHz, resonance at >200 kHz
IGBT in conjunction with ultrafast, ultrasoft recovery antiparallel diodes (HEXFREDTM)
A more precise parameter distribution
Isolated TO-220 FullpakTM, a standard in the industry
IRG4IBC20UDPBF Applications
Switching applications
BIPOLAR TRANSISTOR WITH NSULATED GATE DIODE OF ULTRAFAST SOFT RECOVERY
IRG4IBC20UDPBF Features
Insulation voltage of.5kV, 60s
Heatsink to creapage distance: 4.8 mm
UltraFast: Designed to operate at high frequencies Hard switching at 8–40 kHz, resonance at >200 kHz
IGBT in conjunction with ultrafast, ultrasoft recovery antiparallel diodes (HEXFREDTM)
A more precise parameter distribution
Isolated TO-220 FullpakTM, a standard in the industry
IRG4IBC20UDPBF Applications
Switching applications
IRG4IBC20UDPBF More Descriptions
Trans IGBT Chip N-CH 600V 11.4A 3-Pin(3 Tab) TO-220 Full-Pak
N Channel 600 V 34 W 27 nC Flange Mount UltraFast CoPack IGBT - TO-220FP
600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak package
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11.4A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:34W; Package/Case:TO-220 ;RoHS Compliant: Yes
IGBT, TO-220 FULLPAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:11.4A; Voltage, Vce Sat Max:1.85V; Power Dissipation:34W; Case Style:TO-220FP; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:52A; No. of Pins:3; Power, Pd:34W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:220ns; Time, Rise:17ns; Transistors, No. of:1
N Channel 600 V 34 W 27 nC Flange Mount UltraFast CoPack IGBT - TO-220FP
600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak package
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11.4A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:34W; Package/Case:TO-220 ;RoHS Compliant: Yes
IGBT, TO-220 FULLPAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:11.4A; Voltage, Vce Sat Max:1.85V; Power Dissipation:34W; Case Style:TO-220FP; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:52A; No. of Pins:3; Power, Pd:34W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:220ns; Time, Rise:17ns; Transistors, No. of:1
The three parts on the right have similar specifications to IRG4IBC20UDPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationRise TimePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountJESD-609 CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Additional FeatureTurn On Delay TimeTurn-Off Delay TimeSupplier Device PackageView Compare
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IRG4IBC20UDPBF16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.299997gSILICON-55°C~150°C TJTube2003Obsolete1 (Unlimited)3Through HoleEAR99Insulated Gate BIP Transistors600V34W11.4A1Single34WISOLATEDStandardPOWER CONTROL17nsN-CHANNEL2.1V11.4A37 nsTO-220AB600V2.1V55 ns480V, 6.5A, 50 Ω, 15V2.1V @ 15V, 6.5A320 ns27nC52A39ns/93ns160μJ (on), 130μJ (off)20V6V170ns16.129mm10.7442mm4.826mmNo SVHCNoRoHS CompliantLead Free------------------ -
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--SILICON-55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)2------1--COLLECTORStandardPOWER CONTROL-N-CHANNEL--37ns---63 ns480V, 9A, 50 Ω, 15V2V @ 15V, 9A610 ns27nC64A43ns/240ns250μJ (on), 640μJ (off)--------Non-RoHS Compliant-YESe3MATTE TIN OVER NICKELSINGLEGULL WING26030R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODE60W600V16A----
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8 WeeksSurface Mount, Through HoleSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-SILICON-55°C~150°C TJTube2004Last Time Buy1 (Unlimited)2-EAR99Insulated Gate BIP Transistors600V160W40A1Dual160WCOLLECTORStandardPOWER CONTROL23nsN-CHANNEL2.5V40A--600V2.05V48 ns480V, 20A, 10 Ω, 15V2.5V @ 15V, 20A294 ns98nC160A27ns/100ns110μJ (on), 230μJ (off)20V6V110ns4.83mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Free-e3Matte Tin (Sn) - with Nickel (Ni) barrierSINGLEGULL WING26030R-PSSO-G2-----LOW CONDUCTION LOSS27 ns100 ns-
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~150°C TJTube2000Obsolete1 (Unlimited)-----------Standard----------480V, 9A, 50Ohm, 15V2.8V @ 15V, 9A-34nC32A28ns/150ns150μJ (on), 250μJ (off)--------Non-RoHS Compliant-----------60W600V16A---D2PAK
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