Infineon Technologies IRG4IBC20FDPBF
- Part Number:
- IRG4IBC20FDPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587294-IRG4IBC20FDPBF
- Description:
- IGBT 600V 14.3A 34W TO220FP
- ECAD Model:
-
- Datasheet:
- IRG4IBC20FDPBF
Infineon Technologies IRG4IBC20FDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4IBC20FDPBF.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2000
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation34W
- Current Rating14.3A
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation34W
- Case ConnectionISOLATED
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Rise Time20ns
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current14.3A
- Reverse Recovery Time37 ns
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2V
- Turn On Time63 ns
- Test Condition480V, 9A, 50 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 9A
- Turn Off Time-Nom (toff)610 ns
- Gate Charge27nC
- Current - Collector Pulsed (Icm)64A
- Td (on/off) @ 25°C43ns/240ns
- Switching Energy250μJ (on), 640μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6V
- Height16.129mm
- Length10.7442mm
- Width4.826mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRG4IBC20FDPBF Description
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC20FDPBF Features
HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes are packaged with IGBT.
A more precise parameter distribution
Isolated TO-220 FullpakTM, a standard in the industry
Free of lead
IRG4IBC20FDPBF Applications
Switching applications
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC20FDPBF Features
HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes are packaged with IGBT.
A more precise parameter distribution
Isolated TO-220 FullpakTM, a standard in the industry
Free of lead
IRG4IBC20FDPBF Applications
Switching applications
IRG4IBC20FDPBF More Descriptions
Trans IGBT Chip N-CH 600V 14.3A 3-Pin(3 Tab) TO-220 Full-Pak
IRG4IBC20FD Series 600 V 14.3 A Through Hole Fast CoPack IGBT - TO-220-3
600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak package
Insulated Gate Bipolar Transistor, 14.3A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Copacked 600V IGBT in a TO-220 FullPak package with ultrafast 1-8 kHz ultrafast,ultrasoft recovery antiparallel diode, TO-220-3 FP, RoHSInfineon SCT
IGBT, N; Transistor Type:IGBT; DC Collector Current:14.3A; Power Dissipation Pd:34W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic Continuous a Max:14.3A; Package / Case:TO-220FP; Power Dissipation Max:34W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
IRG4IBC20FD Series 600 V 14.3 A Through Hole Fast CoPack IGBT - TO-220-3
600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak package
Insulated Gate Bipolar Transistor, 14.3A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Copacked 600V IGBT in a TO-220 FullPak package with ultrafast 1-8 kHz ultrafast,ultrasoft recovery antiparallel diode, TO-220-3 FP, RoHSInfineon SCT
IGBT, N; Transistor Type:IGBT; DC Collector Current:14.3A; Power Dissipation Pd:34W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic Continuous a Max:14.3A; Package / Case:TO-220FP; Power Dissipation Max:34W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
The three parts on the right have similar specifications to IRG4IBC20FDPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationRise TimePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountJESD-609 CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Fall Time-Max (tf)Supplier Device PackageView Compare
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IRG4IBC20FDPBF16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTube2000Last Time Buy1 (Unlimited)3EAR99Insulated Gate BIP Transistors600V34W14.3A1Single34WISOLATEDStandardPOWER CONTROL20nsN-CHANNEL2V14.3A37 nsTO-220AB600V2V63 ns480V, 9A, 50 Ω, 15V2V @ 15V, 9A610 ns27nC64A43ns/240ns250μJ (on), 640μJ (off)20V6V16.129mm10.7442mm4.826mmNoROHS3 CompliantLead Free----------------- -
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)2-----1--COLLECTORStandardPOWER CONTROL-N-CHANNEL--37ns---63 ns480V, 9A, 50 Ω, 15V2V @ 15V, 9A610 ns27nC64A43ns/240ns250μJ (on), 640μJ (off)------Non-RoHS Compliant-YESe3MATTE TIN OVER NICKELSINGLEGULL WING26030R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODE60W600V16A---
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTube2000Obsolete1 (Unlimited)2EAR99Insulated Gate BIP Transistors---1--COLLECTORStandardPOWER CONTROL-N-CHANNEL------40 ns480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A1550 ns50nC68A22ns/540ns260μJ (on), 3.45mJ (off)20V6V----Non-RoHS Compliant-YESe3Matte Tin (Sn) - with Nickel (Ni) barrierSINGLEGULL WING26030R-PSSO-G2-SINGLE100W600V34A100W590ns-
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTube2000Obsolete1 (Unlimited)----------Standard----------480V, 9A, 50Ohm, 15V2.8V @ 15V, 9A-34nC32A28ns/150ns150μJ (on), 250μJ (off)------Non-RoHS Compliant-----------60W600V16A--D2PAK
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