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IRG4BH20K-SPBF

Infineon Technologies IRG4BH20K-SPBF

Part Number:
IRG4BH20K-SPBF
Manufacturer:
Infineon Technologies
Ventron No:
3587177-IRG4BH20K-SPBF
Description:
IGBT 1200V 11A 60W D2PAK
ECAD Model:
Datasheet:
IRG4BH20K-SPBF

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Specifications
Infineon Technologies IRG4BH20K-SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BH20K-SPBF.
  • Factory Lead Time
    9 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • JESD-609 Code
    e3
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    1.2kV
  • Max Power Dissipation
    60W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    11A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    60W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    MOTOR CONTROL
  • Rise Time
    26ns
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    4.3V
  • Max Collector Current
    11A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    3.17V
  • Turn On Time
    51 ns
  • Test Condition
    960V, 5A, 50 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    4.3V @ 15V, 5A
  • Turn Off Time-Nom (toff)
    720 ns
  • Gate Charge
    28nC
  • Current - Collector Pulsed (Icm)
    22A
  • Td (on/off) @ 25°C
    23ns/93ns
  • Switching Energy
    450μJ (on), 440μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    400ns
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRG4BH20K-SPBF Description
The IRG4BH20K-SPBF is a Short Circuit Rated Ultrafast IGBT.

IRG4BH20K-SPBF Features
High short circuit rating optimized for motor control,  tsc =10μs @ VCC = 720V , TJ = 125°C, VGE = 15V
Combines low conduction losses with the high switching speed
The latest generation design provides tighter parameter distribution and higher efficiency than previous generations
Industry-standard D2Pak package
Lead-Free

IRG4BH20K-SPBF Applications
Drives
Industrial
IRG4BH20K-SPBF More Descriptions
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
IRG4BH20K Series 1200 V 11 A Short Circuit Rated UltraFast IGBT - D2PAK-3
Trans IGBT Chip N-CH 1200V 11A 60000mW 3-Pin(2 Tab) D2PAK Tube
IGBT, 1200V, D2-PAK; Transistor Type:IGBT; DC Collector Current:11A; Collector Emitter Voltage Vces:3.17V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:TO-263; Current Ic Continuous a Max:5A; Package / Case:D2-PAK; Power Dissipation Max:60W; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulsed Current Icm:22A; Rise Time:26ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Product Comparison
The three parts on the right have similar specifications to IRG4BH20K-SPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Qualification Status
    Configuration
    Power - Max
    Reverse Recovery Time
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Turn On Delay Time
    Turn-Off Delay Time
    View Compare
  • IRG4BH20K-SPBF
    IRG4BH20K-SPBF
    Infineon Technologies
    9 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e3
    Last Time Buy
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    1.2kV
    60W
    GULL WING
    260
    11A
    30
    R-PSSO-G2
    1
    Single
    60W
    COLLECTOR
    Standard
    MOTOR CONTROL
    26ns
    N-CHANNEL
    4.3V
    11A
    1.2kV
    1200V
    3.17V
    51 ns
    960V, 5A, 50 Ω, 15V
    4.3V @ 15V, 5A
    720 ns
    28nC
    22A
    23ns/93ns
    450μJ (on), 440μJ (off)
    20V
    6.5V
    400ns
    4.83mm
    10.67mm
    9.65mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC20FD-STRR
    IRG4BC20FD-STRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    MATTE TIN OVER NICKEL
    -
    -
    -
    -
    GULL WING
    260
    -
    30
    R-PSSO-G2
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    600V
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    60W
    37ns
    16A
    -
    -
    -
    IRG4BH20K-SPBF vs IRG4BC20FD-STRR
  • IRG4BC30S-S
    IRG4BC30S-S
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    Insulated Gate BIP Transistors
    -
    -
    GULL WING
    260
    -
    30
    R-PSSO-G2
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    600V
    -
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    20V
    6V
    590ns
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SINGLE
    -
    SINGLE
    100W
    -
    34A
    100W
    -
    -
    IRG4BH20K-SPBF vs IRG4BC30S-S
  • IRG4BC40W-SPBF
    IRG4BC40W-SPBF
    Infineon Technologies
    8 Weeks
    Surface Mount, Through Hole
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    Last Time Buy
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    600V
    160W
    GULL WING
    260
    40A
    30
    R-PSSO-G2
    1
    Dual
    160W
    COLLECTOR
    Standard
    POWER CONTROL
    23ns
    N-CHANNEL
    2.5V
    40A
    600V
    -
    2.05V
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    20V
    6V
    110ns
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    SINGLE
    -
    -
    -
    -
    -
    -
    27 ns
    100 ns
    IRG4BH20K-SPBF vs IRG4BC40W-SPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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