Infineon Technologies IRG4BC40SPBF
- Part Number:
- IRG4BC40SPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3072051-IRG4BC40SPBF
- Description:
- IGBT 600V 60A 160W TO220AB
- Datasheet:
- IRG4BC40SPBF
Infineon Technologies IRG4BC40SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC40SPBF.
- Factory Lead Time16 Weeks
- MountSurface Mount, Through Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2000
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation160W
- Terminal PositionSINGLE
- Number of Elements1
- Element ConfigurationDual
- Power Dissipation160W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Turn On Delay Time22 ns
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time650 ns
- Collector Emitter Voltage (VCEO)1.5V
- Max Collector Current60A
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.5V
- Turn On Time44 ns
- Test Condition480V, 31A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.5V @ 15V, 31A
- Turn Off Time-Nom (toff)1940 ns
- Gate Charge100nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C22ns/650ns
- Switching Energy450μJ (on), 6.5mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6V
- Fall Time-Max (tf)570ns
- Height16.51mm
- Length10.668mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRG4BC40SPBF Description
The Infineon Technologies IRG4BC40SPBF Generation 4 IGBT provide the best efficiency possible and is designed for specific application requirements.
IRG4BC40SPBF Features
Industry-standard TO 220AB package
Lead-Free
Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IRG4BC40SPBF Applications
Switched-mode power supplies
Traction motor control & Induction heating
The Infineon Technologies IRG4BC40SPBF Generation 4 IGBT provide the best efficiency possible and is designed for specific application requirements.
IRG4BC40SPBF Features
Industry-standard TO 220AB package
Lead-Free
Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IRG4BC40SPBF Applications
Switched-mode power supplies
Traction motor control & Induction heating
IRG4BC40SPBF More Descriptions
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3 Tab) TO-220AB Tube
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHSInfineon SCT
In a Pack of 5, Infineon IRG4BC40SPBF IGBT, 60 A 600 V, 3-Pin TO-220AB
Insulated Gate Bipolar Transistor Through Hole IGBT - TO-220-3
Transistor; IGBT; 600V; 60A; 160W; -55 150 deg.C; THT; TO220
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 380 ns Power dissipation: 160 W
IGBT, 600V, 60A, TO-220AB-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.68V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHSInfineon SCT
In a Pack of 5, Infineon IRG4BC40SPBF IGBT, 60 A 600 V, 3-Pin TO-220AB
Insulated Gate Bipolar Transistor Through Hole IGBT - TO-220-3
Transistor; IGBT; 600V; 60A; 160W; -55 150 deg.C; THT; TO220
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 380 ns Power dissipation: 160 W
IGBT, 600V, 60A, TO-220AB-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.68V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3
The three parts on the right have similar specifications to IRG4BC40SPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTerminal PositionNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTurn On Delay TimeTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountJESD-609 CodeTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxReverse Recovery TimeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Supplier Device PackageView Compare
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IRG4BC40SPBF16 WeeksSurface Mount, Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTube2000Last Time Buy1 (Unlimited)3EAR99Insulated Gate BIP Transistors160WSINGLE1Dual160WCOLLECTORStandard22 nsPOWER CONTROLN-CHANNEL650 ns1.5V60ATO-220AB600V1.5V44 ns480V, 31A, 10 Ω, 15V1.5V @ 15V, 31A1940 ns100nC120A22ns/650ns450μJ (on), 6.5mJ (off)20V6V570ns16.51mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Free----------------
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)2---SINGLE1--COLLECTORStandard-POWER CONTROLN-CHANNEL------37 ns480V, 7.8A, 75 Ω, 15V2.4V @ 15V, 7.8A400 ns23nC42A17ns/160ns240μJ (on), 260μJ (off)--------Non-RoHS Compliant-YESe3MATTE TINGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODE49W28ns600V14A--
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTube2000Obsolete1 (Unlimited)2EAR99Insulated Gate BIP Transistors-SINGLE1--COLLECTORStandard-POWER CONTROLN-CHANNEL------40 ns480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A1550 ns50nC68A22ns/540ns260μJ (on), 3.45mJ (off)20V6V590ns-----Non-RoHS Compliant-YESe3Matte Tin (Sn) - with Nickel (Ni) barrierGULL WING26030R-PSSO-G2-SINGLE100W-600V34A100W-
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTube2000Obsolete1 (Unlimited)---------Standard----------480V, 9A, 50Ohm, 15V2.8V @ 15V, 9A-34nC32A28ns/150ns150μJ (on), 250μJ (off)--------Non-RoHS Compliant----------60W-600V16A-D2PAK
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