IRG4BC40SPBF

Infineon Technologies IRG4BC40SPBF

Part Number:
IRG4BC40SPBF
Manufacturer:
Infineon Technologies
Ventron No:
3072051-IRG4BC40SPBF
Description:
IGBT 600V 60A 160W TO220AB
ECAD Model:
Datasheet:
IRG4BC40SPBF

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Specifications
Infineon Technologies IRG4BC40SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC40SPBF.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount, Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    160W
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Element Configuration
    Dual
  • Power Dissipation
    160W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    22 ns
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    650 ns
  • Collector Emitter Voltage (VCEO)
    1.5V
  • Max Collector Current
    60A
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.5V
  • Turn On Time
    44 ns
  • Test Condition
    480V, 31A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.5V @ 15V, 31A
  • Turn Off Time-Nom (toff)
    1940 ns
  • Gate Charge
    100nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    22ns/650ns
  • Switching Energy
    450μJ (on), 6.5mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    570ns
  • Height
    16.51mm
  • Length
    10.668mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRG4BC40SPBF Description
The Infineon Technologies IRG4BC40SPBF Generation 4 IGBT provide the best efficiency possible and is designed for specific application requirements.

IRG4BC40SPBF Features
Industry-standard TO 220AB package
Lead-Free
Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IRG4BC40SPBF Applications
Switched-mode power supplies
Traction motor control & Induction heating
IRG4BC40SPBF More Descriptions
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3 Tab) TO-220AB Tube
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHSInfineon SCT
In a Pack of 5, Infineon IRG4BC40SPBF IGBT, 60 A 600 V, 3-Pin TO-220AB
Insulated Gate Bipolar Transistor Through Hole IGBT - TO-220-3
Transistor; IGBT; 600V; 60A; 160W; -55 150 deg.C; THT; TO220
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 380 ns Power dissipation: 160 W
IGBT, 600V, 60A, TO-220AB-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.68V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3
Product Comparison
The three parts on the right have similar specifications to IRG4BC40SPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Terminal Position
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Supplier Device Package
    View Compare
  • IRG4BC40SPBF
    IRG4BC40SPBF
    16 Weeks
    Surface Mount, Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Last Time Buy
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    160W
    SINGLE
    1
    Dual
    160W
    COLLECTOR
    Standard
    22 ns
    POWER CONTROL
    N-CHANNEL
    650 ns
    1.5V
    60A
    TO-220AB
    600V
    1.5V
    44 ns
    480V, 31A, 10 Ω, 15V
    1.5V @ 15V, 31A
    1940 ns
    100nC
    120A
    22ns/650ns
    450μJ (on), 6.5mJ (off)
    20V
    6V
    570ns
    16.51mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC15UD-STRL
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    SINGLE
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    -
    -
    -
    -
    -
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    e3
    MATTE TIN
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    49W
    28ns
    600V
    14A
    -
    -
  • IRG4BC30S-S
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Insulated Gate BIP Transistors
    -
    SINGLE
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    -
    -
    -
    -
    -
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    20V
    6V
    590ns
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    GULL WING
    260
    30
    R-PSSO-G2
    -
    SINGLE
    100W
    -
    600V
    34A
    100W
    -
  • IRG4BC20K-S
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    480V, 9A, 50Ohm, 15V
    2.8V @ 15V, 9A
    -
    34nC
    32A
    28ns/150ns
    150μJ (on), 250μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60W
    -
    600V
    16A
    -
    D2PAK
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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