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IRG4BC30KPBF

Infineon Technologies IRG4BC30KPBF

Part Number:
IRG4BC30KPBF
Manufacturer:
Infineon Technologies
Ventron No:
2494839-IRG4BC30KPBF
Description:
IGBT 600V 28A 100W TO220AB
ECAD Model:
Datasheet:
IRG4BC30KPBF

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Specifications
Infineon Technologies IRG4BC30KPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC30KPBF.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    100W
  • Terminal Position
    SINGLE
  • Current Rating
    28A
  • Number of Elements
    1
  • Element Configuration
    Dual
  • Power Dissipation
    100W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    MOTOR CONTROL
  • Rise Time
    28ns
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.7V
  • Max Collector Current
    28A
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.7V
  • Turn On Time
    54 ns
  • Test Condition
    480V, 16A, 23 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 16A
  • Turn Off Time-Nom (toff)
    380 ns
  • Gate Charge
    67nC
  • Current - Collector Pulsed (Icm)
    58A
  • Td (on/off) @ 25°C
    26ns/130ns
  • Switching Energy
    360μJ (on), 510μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    170ns
  • Height
    15.24mm
  • Length
    10.5156mm
  • Width
    14.6812mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRG4BC30KPBF Description
The IRG4BC30KPBF is a Short Circuit Rated UltraFast IGBT.

IRG4BC30KPBF Features
High short circuit rating optimized for motor control, tsc =10μs，@360V VcE (start), Tj= 125°C, VGE= 15V
Combines low conduction losses with the high switching speed
The latest generation design provides tighter parameter distribution and higher efficiency than previous generations
Lead-Free

IRG4BC30KPBF Applications
Motor Control

IRG4BC30KPBF More Descriptions
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB
INFINEON IRG4BC30KPBF IGBT Single Transistor, N-CH, 28 A, 2.88 V, 100 W, 600 V, TO-220AB, 3 PinsNew
IGBT, SINGLE, 600V, 28A, TO-220AB-3; DC Collector Current: 28A; Collector Emitter Saturation Voltage Vce(on): 2.88V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. o
Product Comparison
The three parts on the right have similar specifications to IRG4BC30KPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Supplier Device Package
    View Compare
  • IRG4BC30KPBF
    IRG4BC30KPBF
    Infineon Technologies
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    3
    EAR99
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    600V
    100W
    SINGLE
    28A
    1
    Dual
    100W
    COLLECTOR
    Standard
    MOTOR CONTROL
    28ns
    N-CHANNEL
    2.7V
    28A
    TO-220AB
    600V
    2.7V
    54 ns
    480V, 16A, 23 Ω, 15V
    2.7V @ 15V, 16A
    380 ns
    67nC
    58A
    26ns/130ns
    360μJ (on), 510μJ (off)
    20V
    6V
    170ns
    15.24mm
    10.5156mm
    14.6812mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC15UD
    IRG4BC15UD
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    3
    -
    ULTRA FAST SOFT RECOVERY
    -
    -
    -
    SINGLE
    -
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    TO-220AB
    -
    -
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    49W
    28ns
    600V
    14A
    -
    IRG4BC30KPBF vs IRG4BC15UD
  • IRG4BC20K-S
    IRG4BC20K-S
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    -
    -
    -
    480V, 9A, 50Ohm, 15V
    2.8V @ 15V, 9A
    -
    34nC
    32A
    28ns/150ns
    150μJ (on), 250μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    60W
    -
    600V
    16A
    D2PAK
    IRG4BC30KPBF vs IRG4BC20K-S
  • IRG4BC20FD
    IRG4BC20FD
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    3
    -
    ULTRA FAST SOFT RECOVERY
    -
    -
    -
    SINGLE
    -
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    TO-220AB
    -
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    60W
    37ns
    600V
    16A
    -
    IRG4BC30KPBF vs IRG4BC20FD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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