Infineon Technologies IRG4BC20UDPBF

Name: IRG4BC20UDPBF
Brand: Infineon Technologies
SKU: 2854580-IRG4BC20UDPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG4BC20UDPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2854580-IRG4BC20UDPBF

Description:: IGBT 600V 13A 60W TO220AB

ECAD Model:

Datasheet:: IRG4BC20UDPbF

Specifications

Infineon Technologies IRG4BC20UDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC20UDPBF.

Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
60W
Current Rating
13A
Number of Elements
1
Element Configuration
Single
Power Dissipation
60W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
39 ns
Transistor Application
POWER CONTROL
Rise Time
15ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
93 ns
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
13A
Reverse Recovery Time
37 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Turn On Time
55 ns
Test Condition
480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff)
320 ns
Gate Charge
27nC
Current - Collector Pulsed (Icm)
52A
Td (on/off) @ 25°C
39ns/93ns
Switching Energy
160μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
170ns
Height
16.51mm
Length
10.668mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IRG4BC20UDPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRG4BC20UDPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRG4BC20UDPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IRG4BC20UDPBF More Descriptions

Transistor; IGBT; TO-220AB; 13 A; 600 V (Max.); 60 W (Max.); 20 V (Max.)
Trans IGBT Chip N-CH 600V 13A 3-Pin(3 Tab) TO-220AB Tube, TO220COPAK-3, RoHSInfineon SCT
IRG4BC20UDPBF Series 600 V 6.5 A N-Channel Ultrafast CoPack IGBT - TO-220AB
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:13A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:60W; Package/Case:TO-220AB ;RoHS Compliant: Yes
IGBT, 600V, 13A, TO-220; Transistor Type:IGBT; DC Collector Current:13A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:13A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:60W; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulsed Current Icm:52A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Product Comparison

The three parts on the right have similar specifications to IRG4BC20UDPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

JESD-609 Code

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Additional Feature

Supplier Device Package

View Compare
IRG4BC20UDPBF

Infineon Technologies

16 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

2003

Obsolete

1 (Unlimited)

3

Through Hole

EAR99

Insulated Gate BIP Transistors

600V

60W

13A

1

Single

60W

COLLECTOR

Standard

39 ns

POWER CONTROL

15ns

N-CHANNEL

93 ns

2.1V

13A

37 ns

TO-220AB

600V

2.1V

55 ns

480V, 6.5A, 50 Ω, 15V

2.1V @ 15V, 6.5A

320 ns

27nC

52A

39ns/93ns

160μJ (on), 130μJ (off)

20V

6V

170ns

16.51mm

10.668mm

4.826mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRG4BC20FD-STRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2000

Obsolete

1 (Unlimited)

2

-

-

-

-

-

-

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

-

-

37ns

-

-

-

63 ns

480V, 9A, 50 Ω, 15V

2V @ 15V, 9A

610 ns

27nC

64A

43ns/240ns

250μJ (on), 640μJ (off)

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

e3

MATTE TIN OVER NICKEL

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

60W

600V

16A

-

-

IRG4BC20UDPBF vs IRG4BC20FD-STRR
IRG4BC40W-SPBF

Infineon Technologies

8 Weeks

Surface Mount, Through Hole

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tube

2004

Last Time Buy

1 (Unlimited)

2

-

EAR99

Insulated Gate BIP Transistors

600V

160W

40A

1

Dual

160W

COLLECTOR

Standard

27 ns

POWER CONTROL

23ns

N-CHANNEL

100 ns

2.5V

40A

-

-

600V

2.05V

48 ns

480V, 20A, 10 Ω, 15V

2.5V @ 15V, 20A

294 ns

98nC

160A

27ns/100ns

110μJ (on), 230μJ (off)

20V

6V

110ns

4.83mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

e3

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

GULL WING

260

30

R-PSSO-G2

-

-

-

-

-

LOW CONDUCTION LOSS

-

IRG4BC20UDPBF vs IRG4BC40W-SPBF
IRG4BC20K-S

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

Standard

-

-

-

-

-

-

-

-

-

-

-

-

480V, 9A, 50Ohm, 15V

2.8V @ 15V, 9A

-

34nC

32A

28ns/150ns

150μJ (on), 250μJ (off)

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

60W

600V

16A

-

D2PAK

IRG4BC20UDPBF vs IRG4BC20K-S

Certification

Related parts for IRG4BC20UDPBF

IRG4BC30F-S

Infineon Technologies

IGBT 600V 31A 100W D2PAK
IRG4BC10SD-L

Infineon Technologies

IGBT 600V 14A 38W TO262
IRG4BC15UD-STRL

Infineon Technologies

IGBT 600V 14A 49W D2PAK
IRG4BC30S-STRLP

Infineon Technologies

IGBT 600V 34A 100W D2PAK
IRG4BC15UD

Infineon Technologies

IGBT 600V 14A 49W TO220AB
IRG4BC20FD-STRR

Infineon Technologies

IGBT 600V 16A 60W D2PAK
IRG4BC30S-S

Infineon Technologies

IGBT 600V 34A 100W D2PAK
IRG4BC40W-SPBF

Infineon Technologies

IGBT 600V 40A 160W D2PAK
IRG4BC20K-S

Infineon Technologies

IGBT 600V 16A 60W D2PAK
IRG4BC20FD

Infineon Technologies

IGBT 600V 16A 60W TO220AB

Popular Search Part Number Related Keywords Search Tags

IRG4BC20UDPBF Price
IRG4BC20UDPBF Picture
IRG4BC20UDPBF Buy
IRG4BC20UDPBF Distributor
IRG4BC20UDPBF Image
IRG4BC20UDPBF Inquiry
IRG4BC20UDPBF Manufacturer
IRG4BC20UDPBF Part
IRG4BC20UDPBF Description
IRG4BC20UDPBF Technical Data
IRG4BC20UDPBF Stock
IRG4BC20UDPBF Wholesales
IRG4BC20UDPBF PDF
IRG4BC20UDPBF Inventory
IRG4BC20UDPBF Supplier
IRG4BC20UDPBF Datasheet
IRG4BC20UDPBF Rfq
IRG4BC20UDPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 13A 3-Pin(3 Tab) TO-220A	600	1 $1.6397 10 $1.981 100 $1.587 500 $1.437 1000 $1.21
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	IGBT 600V 13A 60W TO220AB RoHS: Compliant	1003	1 $3 10 $2.697 100 $2.1674 500 $1.78072 1000 $1.47545
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 13A 3-Pin(3 Tab) TO-220A	6640	9 $1.3822 100 $1.3376 250 $1.2958 500 $1.2565 1000 $1.2196 2500 $1.1847 5000 $1.1518
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 13A 3-Pin(3 Tab) TO-220A	600	5 $2.293 10 $1.981 100 $1.587 500 $1.437
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 13A 3-Pin(3 Tab) TO-220A RoHS: Compliant	0	1000 $1.29 2000 $1.19 4000 $1.19 6000 $1.19 10000 $1.09
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 13A 3-Pin(3 Tab) TO-220A RoHS: Compliant	0	1 $2.0769 10 $1.7929 25 $1.6789 50 $1.6749 100 $1.2929 500 $1.1849 1000 $1.0779
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	IGBT Single Transistor, 13 A, 2.4 V, 60 W, 600 V,	1237	1 $2.46 10 $2.09 100 $1.67 500 $1.47 1000 $1.22
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-220AB RoHS: Compliant	122	1 $2.536 10 $2.234 100 $1.955 500 $1.691 1000 $1.489
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	IGBT Transistors 600V UltraFast 8-60kHz RoHS: Compliant	1658	1 $2.46 10 $2.09 100 $1.67 500 $1.47 1000 $1.22
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	International Rectifier	RoHS: Not Compliant	850	1 $1.52 25 $1.41 100 $1.36 500 $1.3 1000 $1.24
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 13A TO220AB, EA	59	1 $2.57 25 $1.51 100 $1.21 250 $1.14 500 $1.07
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	Transistor: IGBT, 600V, 13A, 60W, TO220AB	162	1 $2.28 3 $2.06 10 $1.7 50 $1.5
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	600V 13A 60W TO220AB RoHS: Compliant	310	10 $1.44 50 $1.14 100 $1.04 200 $1
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	IGBT, 600V, 13A, TO-220 RoHS: Compliant	1254	1 $3.9 10 $3.31 100 $2.65 500 $2.34 1000 $1.94
IRG4BC20UDPBF DISTI #IRG4BC20UDPBF	Infineon Technologies AG	IGBT, 600V, 13A, TO-220 RoHS: Compliant	1480	1 $2.14 10 $1.04 100 $1.02 250 $1.01 500 $0.988

IRG4BC2~~(44)~~
IRG4BC~~(110)~~
IRG4B~~(110)~~
IRG4~~(110)~~
IRG~~(110)~~

Infineon Technologies IRG4BC20UDPBF

Quick Request Quote

Comparing the DHT11 and DHT22 Temperature and Humidity Sensor

MCP2551 CAN Transceiver Features, Working Principle, MCP2551 vs TJA1050

AD9361 RF Transceiver Manufacturer, Features, Structure and Working Principle

ULN2804A Transistor Array Equivalents, Symbol, Working Principle and More