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IRG4BC20SPBF

Infineon Technologies IRG4BC20SPBF

Part Number:
IRG4BC20SPBF
Manufacturer:
Infineon Technologies
Ventron No:
2854667-IRG4BC20SPBF
Description:
IGBT 600V 19A 60W TO220AB
ECAD Model:
Datasheet:
IRG4BC20SPBF

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Specifications
Infineon Technologies IRG4BC20SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC20SPBF.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    60W
  • Terminal Position
    SINGLE
  • Current Rating
    19A
  • Number of Elements
    1
  • Element Configuration
    Dual
  • Power Dissipation
    60W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    27 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    9.7ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    540 ns
  • Collector Emitter Voltage (VCEO)
    1.6V
  • Max Collector Current
    19A
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.4V
  • Turn On Time
    38 ns
  • Test Condition
    480V, 10A, 50 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.6V @ 15V, 10A
  • Turn Off Time-Nom (toff)
    1540 ns
  • Gate Charge
    27nC
  • Current - Collector Pulsed (Icm)
    38A
  • Td (on/off) @ 25°C
    27ns/540ns
  • Switching Energy
    120μJ (on), 2.05mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Height
    8.77mm
  • Length
    10.54mm
  • Width
    4.69mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRG4BC20SPBF Description
The IRG4BC20SPBF is an IGBT 600 V 19 A 60 W Through Hole TO-220AB. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

IRG4BC20SPBF Features
Industry standard TO-220AB package
Lead-Free
Standard: optimized for minimum saturation voltage and low operating frequencies (＜1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions

IRG4BC20SPBF Applications
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
It is used in UPS (Uninterruptible Power Supply) system.
It is used in AC and DC motor drives offering speed control.
It is used in chopper and inverters.
It is used in solar inverters.
IRG4BC20SPBF More Descriptions
600V DC-1 KHZ (STANDARD) DISCRETE IGBT IN A TO-220AB PACKAGE | Infineon IRG4BC20SPBF
IRG4BC20SPbF Series 600 V 10 A N-Channel Standard Speed IGBT - TO-220AB
Trans IGBT Chip N-CH 600V 19A 60000mW 3-Pin(3 Tab) TO-220AB Tube
Transistor; IGBT; 600V; 19A; 60W; -55 150 deg.C; THT; TO220
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:19A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:60W; Package/Case:TO-220AB ;RoHS Compliant: Yes
IGBT, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current, Ic Continuous a Max:19A; Voltage, Vce Sat Max:1.6V; Power Dissipation:60W; Case Style:TO-220; Termination Type:Through Hole; Current, Icm Pulsed:38A; Pins, No. of:3; Power, Pd:60W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:640ns; Time, Rise:9.7ns; Transistors, No. of:1; Voltage, Vceo:600V
Product Comparison
The three parts on the right have similar specifications to IRG4BC20SPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Fall Time-Max (tf)
    Supplier Device Package
    Additional Feature
    Qualification Status
    Reverse Recovery Time
    View Compare
  • IRG4BC20SPBF
    IRG4BC20SPBF
    Infineon Technologies
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Not For New Designs
    1 (Unlimited)
    3
    Through Hole
    EAR99
    Insulated Gate BIP Transistors
    600V
    60W
    SINGLE
    19A
    1
    Dual
    60W
    COLLECTOR
    Standard
    27 ns
    POWER CONTROL
    9.7ns
    N-CHANNEL
    540 ns
    1.6V
    19A
    TO-220AB
    600V
    1.4V
    38 ns
    480V, 10A, 50 Ω, 15V
    1.6V @ 15V, 10A
    1540 ns
    27nC
    38A
    27ns/540ns
    120μJ (on), 2.05mJ (off)
    20V
    6V
    8.77mm
    10.54mm
    4.69mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC30S-S
    IRG4BC30S-S
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    Insulated Gate BIP Transistors
    -
    -
    SINGLE
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    -
    -
    -
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    20V
    6V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    GULL WING
    260
    30
    R-PSSO-G2
    SINGLE
    100W
    600V
    34A
    100W
    590ns
    -
    -
    -
    -
    IRG4BC20SPBF vs IRG4BC30S-S
  • IRG4BC20K-S
    IRG4BC20K-S
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    480V, 9A, 50Ohm, 15V
    2.8V @ 15V, 9A
    -
    34nC
    32A
    28ns/150ns
    150μJ (on), 250μJ (off)
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60W
    600V
    16A
    -
    -
    D2PAK
    -
    -
    -
    IRG4BC20SPBF vs IRG4BC20K-S
  • IRG4BC20FD
    IRG4BC20FD
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    -
    -
    SINGLE
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    TO-220AB
    -
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    60W
    600V
    16A
    -
    -
    -
    ULTRA FAST SOFT RECOVERY
    Not Qualified
    37ns
    IRG4BC20SPBF vs IRG4BC20FD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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