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IRG4BC20SD

Infineon Technologies IRG4BC20SD

Part Number:
IRG4BC20SD
Manufacturer:
Infineon Technologies
Ventron No:
3072338-IRG4BC20SD
Description:
IGBT 600V 19A 60W TO220AB
ECAD Model:
Datasheet:
IRG4BC20SD

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Specifications
Infineon Technologies IRG4BC20SD technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC20SD.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1997
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Additional Feature
    ULTRA FAST SOFT RECOVERY
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    60W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    37ns
  • JEDEC-95 Code
    TO-220AB
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    19A
  • Turn On Time
    99 ns
  • Test Condition
    480V, 10A, 50 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.6V @ 15V, 10A
  • Turn Off Time-Nom (toff)
    1780 ns
  • Gate Charge
    27nC
  • Current - Collector Pulsed (Icm)
    38A
  • Td (on/off) @ 25°C
    62ns/690ns
  • Switching Energy
    320μJ (on), 2.58mJ (off)
  • RoHS Status
    Non-RoHS Compliant
Description
IRG4BC20SD Bipolar Transistor Description
The IRG4BC20SD is a bipolar transistor with an ultra-soft recovery diode. It sees its wide applications in air-conditioners, PFC applications, and other home electronics appliances. It has low losses than regular MOSFET performance and fewer diode losses too. It has a wide range of operating temperatures of -55~150°C. It is capable of carrying a 7.0 A forward current at most.

IRG4BC20SD Bipolar Transistor Features
Extremely low voltage drop 1.4Vtyp. @ 10A Minimizes power dissipation at up to 3 kHz PWM frequency in inverter drives, and up to 4 kHz in brushless DC drives. Very Tight Vce(on) distribution IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry-standard TO-220AB package IGBTs optimized for specific application conditions

IRG4BC20SD Bipolar Transistor Applications
Air Conditioner Dishwasher Fan PFC Pump Washing Machine
Product Comparison
The three parts on the right have similar specifications to IRG4BC20SD.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Reverse Recovery Time
    JEDEC-95 Code
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    JESD-609 Code
    Terminal Finish
    Terminal Form
    Factory Lead Time
    Mount
    Number of Pins
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    View Compare
  • IRG4BC20SD
    IRG4BC20SD
    Infineon Technologies
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    3
    ULTRA FAST SOFT RECOVERY
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    60W
    POWER CONTROL
    N-CHANNEL
    37ns
    TO-220AB
    600V
    19A
    99 ns
    480V, 10A, 50 Ω, 15V
    1.6V @ 15V, 10A
    1780 ns
    27nC
    38A
    62ns/690ns
    320μJ (on), 2.58mJ (off)
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC10SD-L
    IRG4BC10SD-L
    Infineon Technologies
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    38W
    -
    -
    28ns
    -
    600V
    14A
    -
    480V, 8A, 100 Ω, 15V
    1.8V @ 15V, 8A
    -
    15nC
    18A
    76ns/815ns
    310μJ (on), 3.28mJ (off)
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRG4BC20SD vs IRG4BC10SD-L
  • IRG4BC15UD-STRL
    IRG4BC15UD-STRL
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    Obsolete
    1 (Unlimited)
    2
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    49W
    POWER CONTROL
    N-CHANNEL
    28ns
    -
    600V
    14A
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    Non-RoHS Compliant
    e3
    MATTE TIN
    GULL WING
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRG4BC20SD vs IRG4BC15UD-STRL
  • IRG4BC40W-SPBF
    IRG4BC40W-SPBF
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    Last Time Buy
    1 (Unlimited)
    2
    LOW CONDUCTION LOSS
    SINGLE
    260
    30
    R-PSSO-G2
    -
    1
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    -
    -
    -
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    ROHS3 Compliant
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    GULL WING
    8 Weeks
    Surface Mount, Through Hole
    3
    EAR99
    Insulated Gate BIP Transistors
    600V
    160W
    40A
    Dual
    160W
    27 ns
    23ns
    100 ns
    2.5V
    40A
    600V
    2.05V
    20V
    6V
    110ns
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    No
    Lead Free
    IRG4BC20SD vs IRG4BC40W-SPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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