Infineon Technologies IRG4BC20S
- Part Number:
- IRG4BC20S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2496270-IRG4BC20S
- Description:
- IGBT 600V 19A 60W TO220AB
- Datasheet:
- IRG4BC20S
Infineon Technologies IRG4BC20S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC20S.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2000
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max60W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-220AB
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)19A
- Turn On Time38 ns
- Test Condition480V, 10A, 50 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.6V @ 15V, 10A
- Turn Off Time-Nom (toff)1540 ns
- Gate Charge27nC
- Current - Collector Pulsed (Icm)38A
- Td (on/off) @ 25°C27ns/540ns
- Switching Energy120μJ (on), 2.05mJ (off)
- RoHS StatusNon-RoHS Compliant
IRG4BC20S Description
IRG4BC20S devices are INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20S Features
?Standard: designed for low operating frequencies ( 1kHz) and minimal saturation voltage.
?Compared to Generation 3, the Generation 4 IGBT design has a narrower parameter distribution and improved efficiency.
?TO-220AB package is an industry standard.
IRG4BC20S Applications
Switching applications
IRG4BC20S devices are INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20S Features
?Standard: designed for low operating frequencies ( 1kHz) and minimal saturation voltage.
?Compared to Generation 3, the Generation 4 IGBT design has a narrower parameter distribution and improved efficiency.
?TO-220AB package is an industry standard.
IRG4BC20S Applications
Switching applications
The three parts on the right have similar specifications to IRG4BC20S.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusFactory Lead TimeMountNumber of PinsPbfree CodeECCN CodeMax Power DissipationTerminal FormBase Part NumberElement ConfigurationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageRadiation HardeningAdditional FeatureReverse Recovery TimeJESD-609 CodeTerminal FinishSubcategoryVoltage - Rated DCCurrent RatingPower DissipationTurn On Delay TimeRise TimeTurn-Off Delay TimeCollector Emitter Saturation VoltageGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthREACH SVHCLead FreeView Compare
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IRG4BC20SThrough HoleTO-220-3NOSILICON-55°C~150°C TJTube2000Obsolete1 (Unlimited)3SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLECOLLECTORStandard60WPOWER CONTROLN-CHANNELTO-220AB600V19A38 ns480V, 10A, 50 Ω, 15V1.6V @ 15V, 10A1540 ns27nC38A27ns/540ns120μJ (on), 2.05mJ (off)Non-RoHS Compliant-----------------------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)2---R-PSSO-G2-1-COLLECTORStandard100WPOWER CONTROLN-CHANNEL---40 ns480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A1550 ns50nC68A22ns/540ns260μJ (on), 3.45mJ (off)RoHS Compliant11 WeeksSurface Mount3yesEAR99100WGULL WINGIRG4BC30S-SPBFSingle1.6V34A600V600VNo--------------------
-
Through HoleTO-220-3NOSILICON-55°C~150°C TJTube2001Obsolete1 (Unlimited)3SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandard49WPOWER CONTROLN-CHANNELTO-220AB600V14A37 ns480V, 7.8A, 75 Ω, 15V2.4V @ 15V, 7.8A400 ns23nC42A17ns/160ns240μJ (on), 260μJ (off)Non-RoHS Compliant--------------ULTRA FAST SOFT RECOVERY28ns------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTube2004Last Time Buy1 (Unlimited)2SINGLE26030R-PSSO-G2-1-COLLECTORStandard-POWER CONTROLN-CHANNEL---48 ns480V, 20A, 10 Ω, 15V2.5V @ 15V, 20A294 ns98nC160A27ns/100ns110μJ (on), 230μJ (off)ROHS3 Compliant8 WeeksSurface Mount, Through Hole3-EAR99160WGULL WING-Dual2.5V40A600V-NoLOW CONDUCTION LOSS-e3Matte Tin (Sn) - with Nickel (Ni) barrierInsulated Gate BIP Transistors600V40A160W27 ns23ns100 ns2.05V20V6V110ns4.83mm10.668mm4.826mmNo SVHCLead Free
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