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IRG4BC15UDPBF

Infineon Technologies IRG4BC15UDPBF

Part Number:
IRG4BC15UDPBF
Manufacturer:
Infineon Technologies
Ventron No:
3587455-IRG4BC15UDPBF
Description:
IGBT 600V 14A 49W TO220AB
ECAD Model:
Datasheet:
IRG4BC15UDPBF

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Specifications
Infineon Technologies IRG4BC15UDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC15UDPBF.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    ULTRA FAST SOFT RECOVERY
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    49W
  • Current Rating
    14A
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    49W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    17 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    20ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    160 ns
  • Collector Emitter Voltage (VCEO)
    2.4V
  • Max Collector Current
    14A
  • Reverse Recovery Time
    28 ns
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.95V
  • Turn On Time
    37 ns
  • Test Condition
    480V, 7.8A, 75 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 7.8A
  • Turn Off Time-Nom (toff)
    400 ns
  • Gate Charge
    23nC
  • Current - Collector Pulsed (Icm)
    42A
  • Td (on/off) @ 25°C
    17ns/160ns
  • Switching Energy
    240μJ (on), 260μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Height
    15.24mm
  • Length
    10.5156mm
  • Width
    4.699mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRG4BC15UDPBF Description
IRG4BC15UDPBF, manufactured by Infineon Technologies. Its category belongs to IGBT Transistors. It is applied to many fields, like Communications equipment Broadband fixed line access Enterprise systems Datacenter & enterprise computing Personal electronics Portable electronics. And the main parameters of this part is IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.02 V Current release time: 83 ns Power dissipation: 49 W. Additionally, it is green and compliant to RoHS (Lead-free / RoHS Compliant).

IRG4BC15UDPBF Features
Lead-Free
Industry standard TO-220AB package
IGBT Co-packaged with ultra-soft-recovery antiparallel diode
UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching

IRG4BC15UDPBF Applications
Enterprise systems
Personal electronics
Communications equipment
IRG4BC15UDPBF More Descriptions
Trans IGBT Chip N-CH 600V 14A 3-Pin(3 Tab) TO-220AB
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
IRG4BC15UD Series 600 V 7.8 A Insulated Gate Bipolar Transistor - TO-220AB
Tube Through Hole ROHS3Compliant IGBT Transistor 2.4V @ 15V 7.8A 14A 49W 28ns
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.02 V Current release time: 83 ns Power dissipation: 49 W
IGBT, 600V, 11A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Current Ic Continuous a Max:11A; Voltage, Vce Sat Max:1.95V; Power Dissipation:49W; Case Style:TO-220AB; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:42A; Max Fall Time:180ns; Power Dissipation Pd:49W; Rise Time:11ns
Product Comparison
The three parts on the right have similar specifications to IRG4BC15UDPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    JESD-609 Code
    Terminal Finish
    Terminal Form
    Power Dissipation-Max (Abs)
    Fall Time-Max (tf)
    View Compare
  • IRG4BC15UDPBF
    IRG4BC15UDPBF
    Infineon Technologies
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    3
    EAR99
    ULTRA FAST SOFT RECOVERY
    Insulated Gate BIP Transistors
    600V
    49W
    14A
    1
    Single
    49W
    COLLECTOR
    Standard
    17 ns
    POWER CONTROL
    20ns
    N-CHANNEL
    160 ns
    2.4V
    14A
    28 ns
    TO-220AB
    600V
    1.95V
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    20V
    6V
    15.24mm
    10.5156mm
    4.699mm
    No SVHC
    No
    RoHS Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC15UD
    IRG4BC15UD
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    3
    -
    ULTRA FAST SOFT RECOVERY
    -
    -
    -
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    28ns
    TO-220AB
    -
    -
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    49W
    600V
    14A
    -
    -
    -
    -
    -
    IRG4BC15UDPBF vs IRG4BC15UD
  • IRG4BC20FD-STRR
    IRG4BC20FD-STRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    -
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    37ns
    -
    -
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SINGLE
    260
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    60W
    600V
    16A
    e3
    MATTE TIN OVER NICKEL
    GULL WING
    -
    -
    IRG4BC15UDPBF vs IRG4BC20FD-STRR
  • IRG4BC30S-S
    IRG4BC30S-S
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    Insulated Gate BIP Transistors
    -
    -
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    -
    -
    -
    -
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    20V
    6V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SINGLE
    260
    30
    R-PSSO-G2
    -
    SINGLE
    100W
    600V
    34A
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    GULL WING
    100W
    590ns
    IRG4BC15UDPBF vs IRG4BC30S-S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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