Infineon Technologies IRF3710ZGPBF

Name: IRF3710ZGPBF
Brand: Infineon Technologies
SKU: 2854182-IRF3710ZGPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF3710ZGPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2854182-IRF3710ZGPBF

Description:: MOSFET N-CH 100V 59A TO-220AB

ECAD Model:

Datasheet:: IRF3710ZGPBF

Specifications

Infineon Technologies IRF3710ZGPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3710ZGPBF.

Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
160W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
18m Ω @ 35A, 10V
Vgs(th) (Max) @ Id
4V @ 250mA
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
59A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V

Description

IRF3710ZGPBF Overview
A device's maximum input capacitance is 2900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF3710ZGPBF Features
a 100V drain to source voltage (Vdss)

IRF3710ZGPBF Applications
There are a lot of Infineon Technologies
IRF3710ZGPBF applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

IRF3710ZGPBF More Descriptions

100V Halogen-Free Single N-Channel HEXFET Power MOSFET in a TO-220AB package
TUBE / MOSFET, 100V, 59A, 18 mOhm, 82 nC Qg, TO-220AB
Trans MOSFET N-CH 100V 59A 3-Pin(3 Tab) TO-220AB

Product Comparison

The three parts on the right have similar specifications to IRF3710ZGPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Surface Mount

Transistor Element Material

Number of Terminations

ECCN Code

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

View Compare
IRF3710ZGPBF

Infineon Technologies

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

HEXFET®

2011

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

160W Tc

N-Channel

18m Ω @ 35A, 10V

4V @ 250mA

2900pF @ 25V

59A Tc

120nC @ 10V

100V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF3515STRLPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

Cut Tape (CT)

HEXFET®

2004

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

-

N-Channel

45m Ω @ 25A, 10V

4.5V @ 250μA

2260pF @ 25V

41A Tc

107nC @ 10V

150V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF3710ZGPBF vs IRF3515STRLPBF
IRF3305

Infineon Technologies

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

330W Tc

N-Channel

8m Ω @ 75A, 10V

4V @ 250μA

3650pF @ 25V

75A Tc

150nC @ 10V

55V

10V

±20V

NO

SILICON

3

EAR99

AVALANCHE RATED

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-220AB

75A

0.008Ohm

560A

55V

470 mJ

Non-RoHS Compliant

IRF3710ZGPBF vs IRF3305
IRF3707S

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tube

HEXFET®

2000

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

87W Tc

N-Channel

12.5m Ω @ 15A, 10V

3V @ 250μA

1990pF @ 15V

62A Tc

19nC @ 4.5V

30V

4.5V 10V

±20V

-

-

-

EAR99

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

IRF3710ZGPBF vs IRF3707S