Infineon Technologies IRF3706STRL
- Part Number:
- IRF3706STRL
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853807-IRF3706STRL
- Description:
- MOSFET N-CH 20V 77A D2PAK
- ECAD Model:
-
- Datasheet:
- IRF3706STRL
Infineon Technologies IRF3706STRL technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3706STRL.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max88W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8.5m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2410pF @ 10V
- Current - Continuous Drain (Id) @ 25°C77A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.8V 10V
- Vgs (Max)±12V
- RoHS StatusNon-RoHS Compliant
IRF3706STRL Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2410pF @ 10V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (2.8V 10V) reduces this device's overall power consumption.
IRF3706STRL Features
a 20V drain to source voltage (Vdss)
IRF3706STRL Applications
There are a lot of Infineon Technologies
IRF3706STRL applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2410pF @ 10V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (2.8V 10V) reduces this device's overall power consumption.
IRF3706STRL Features
a 20V drain to source voltage (Vdss)
IRF3706STRL Applications
There are a lot of Infineon Technologies
IRF3706STRL applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF3706STRL More Descriptions
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET N-CH 20V 77A D2PAK
MOSFET N-CH 20V 77A D2PAK
The three parts on the right have similar specifications to IRF3706STRL.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSupplier Device PackageSurface MountTransistor Element MaterialNumber of TerminationsECCN CodeAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRF3706STRLSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)88W TcN-Channel8.5m Ω @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V20V2.8V 10V±12VNon-RoHS Compliant----------------------- -
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)57W TcN-Channel7.9m Ω @ 21A, 10V2.55V @ 250μA1220pF @ 10V67A Tc13nC @ 4.5V20V4.5V 10V±20V-----------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)HEXFET®2000Obsolete1 (Unlimited)MOSFET (Metal Oxide)87W TcN-Channel9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V20V4.5V 10V±20VNon-RoHS CompliantD2PAK---------------------
-
Through HoleTO-220-3-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)330W TcN-Channel8m Ω @ 75A, 10V4V @ 250μA3650pF @ 25V75A Tc150nC @ 10V55V10V±20VNon-RoHS Compliant-NOSILICON3EAR99AVALANCHE RATEDSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-220AB75A0.008Ohm560A55V470 mJ
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