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IRF3305

Infineon Technologies IRF3305

Part Number:
IRF3305
Manufacturer:
Infineon Technologies
Ventron No:
2853749-IRF3305
Description:
MOSFET N-CH 55V 75A TO-220AB
ECAD Model:
Datasheet:
IRF3305

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Specifications
Infineon Technologies IRF3305 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3305.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    330W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3650pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    75A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    150nC @ 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-220AB
  • Drain Current-Max (Abs) (ID)
    75A
  • Drain-source On Resistance-Max
    0.008Ohm
  • Pulsed Drain Current-Max (IDM)
    560A
  • DS Breakdown Voltage-Min
    55V
  • Avalanche Energy Rating (Eas)
    470 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRF3305 Description   IRF3305 MOSFET is a high-voltage, fast-switching MOSFET which is low in on-state resistance. IRF3305 Infineon Technologies gives designers the highest quality combination of ruggedized design, speedy switching, cost-effectiveness, and low resistance to on-resistance. Due to the low resistance of IRF3305 circuit, it is suitable for Synchronous rectification, Motor control, Isolated DC-DC converters, switches, audio amplifiers.     IRF3305 Features   Dynamic dv/dt Rating Industry-leading quality Fully Avalanche Rated Fast Switching RoHS Compliant     IRF3305 Applications   Synchronous rectification Motor control Isolated DC-DC converters Or-ing switches Audio amplifiers
Product Comparison
The three parts on the right have similar specifications to IRF3305.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Supplier Device Package
    Mount
    Number of Pins
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Power Dissipation
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRF3305
    IRF3305
    Infineon Technologies
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    3
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    330W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    8m Ω @ 75A, 10V
    4V @ 250μA
    3650pF @ 25V
    75A Tc
    150nC @ 10V
    55V
    10V
    ±20V
    TO-220AB
    75A
    0.008Ohm
    560A
    55V
    470 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF3704ZSTRRPBF
    IRF3704ZSTRRPBF
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    57W Tc
    -
    -
    N-Channel
    -
    7.9mOhm @ 21A, 10V
    2.55V @ 250μA
    1220pF @ 10V
    67A Tc
    13nC @ 4.5V
    20V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    D2PAK
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF3305 vs IRF3704ZSTRRPBF
  • IRF3706STRLPBF
    IRF3706STRLPBF
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    88W Tc
    -
    -
    N-Channel
    -
    8.5mOhm @ 15A, 10V
    2V @ 250μA
    2410pF @ 10V
    77A Tc
    35nC @ 4.5V
    20V
    2.8V 10V
    ±12V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    D2PAK
    Surface Mount
    3
    175°C
    -55°C
    Single
    88W
    87ns
    4.8 ns
    17 ns
    77A
    12V
    20V
    2.41nF
    10.5mOhm
    8.5 mΩ
    IRF3305 vs IRF3706STRLPBF
  • IRF3704STRL
    IRF3704STRL
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    87W Tc
    -
    -
    N-Channel
    -
    9mOhm @ 15A, 10V
    3V @ 250μA
    1996pF @ 10V
    77A Tc
    19nC @ 4.5V
    20V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    D2PAK
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF3305 vs IRF3704STRL
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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