Infineon Technologies IRF3707S
- Part Number:
- IRF3707S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853715-IRF3707S
- Description:
- MOSFET N-CH 30V 62A D2PAK
- ECAD Model:
-
- Datasheet:
- IRF3707S
Infineon Technologies IRF3707S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3707S.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2000
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max87W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs12.5m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1990pF @ 15V
- Current - Continuous Drain (Id) @ 25°C62A Tc
- Gate Charge (Qg) (Max) @ Vgs19nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusNon-RoHS Compliant
IRF3707S Overview
The maximum input capacitance of this device is 1990pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRF3707S Features
a 30V drain to source voltage (Vdss)
IRF3707S Applications
There are a lot of Infineon Technologies
IRF3707S applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1990pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRF3707S Features
a 30V drain to source voltage (Vdss)
IRF3707S Applications
There are a lot of Infineon Technologies
IRF3707S applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF3707S More Descriptions
IR IRF3707S Trans MOSFET N-CH 30V 62A 3-Pin (2 Tab ) D2PAK
MOSFET, 30V, 62A, 12.5 mOhm, 19 nC Qg, D2-Pak
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
French Electronic Distributor since 1988
MOSFET, 30V, 62A, 12.5 mOhm, 19 nC Qg, D2-Pak
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRF3707S.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSupplier Device PackageSurface MountTransistor Element MaterialNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRF3707SSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTubeHEXFET®2000Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)87W TcN-Channel12.5m Ω @ 15A, 10V3V @ 250μA1990pF @ 15V62A Tc19nC @ 4.5V30V4.5V 10V±20VNon-RoHS Compliant---------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)-MOSFET (Metal Oxide)57W TcN-Channel7.9mOhm @ 21A, 10V2.55V @ 250μA1220pF @ 10V67A Tc13nC @ 4.5V20V4.5V 10V±20V-D2PAK--------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)-MOSFET (Metal Oxide)88W TcN-Channel8.5m Ω @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V20V2.8V 10V±12VNon-RoHS Compliant---------------------
-
Through HoleTO-220-3-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)330W TcN-Channel8m Ω @ 75A, 10V4V @ 250μA3650pF @ 25V75A Tc150nC @ 10V55V10V±20VNon-RoHS Compliant-NOSILICON3AVALANCHE RATEDSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-220AB75A0.008Ohm560A55V470 mJ
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