Infineon Technologies IRF3704ZSTRRPBF

Name: IRF3704ZSTRRPBF
Brand: Infineon Technologies
SKU: 2853972-IRF3704ZSTRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF3704ZSTRRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2853972-IRF3704ZSTRRPBF

Description:: MOSFET N-CH 20V 67A D2PAK

ECAD Model:

Datasheet:: IRF3704ZSTRRPBF

Specifications

Infineon Technologies IRF3704ZSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3704ZSTRRPBF.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Supplier Device Package
D2PAK
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
57W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
7.9mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1220pF @ 10V
Current - Continuous Drain (Id) @ 25°C
67A Tc
Gate Charge (Qg) (Max) @ Vgs
13nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V

Description

IRF3704ZSTRRPBF Overview
A device's maximal input capacitance is 1220pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IRF3704ZSTRRPBF Features
a 20V drain to source voltage (Vdss)

IRF3704ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF3704ZSTRRPBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IRF3704ZSTRRPBF More Descriptions

MOSFET N-CH 20V 67A D2PAK

Product Comparison

The three parts on the right have similar specifications to IRF3704ZSTRRPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Surface Mount

Transistor Element Material

Number of Terminations

ECCN Code

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

View Compare
IRF3704ZSTRRPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

D2PAK

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

57W Tc

N-Channel

7.9mOhm @ 21A, 10V

2.55V @ 250μA

1220pF @ 10V

67A Tc

13nC @ 4.5V

20V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF3515STRLPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

Cut Tape (CT)

HEXFET®

2004

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

-

N-Channel

45m Ω @ 25A, 10V

4.5V @ 250μA

2260pF @ 25V

41A Tc

107nC @ 10V

150V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF3704ZSTRRPBF vs IRF3515STRLPBF
IRF3305

Infineon Technologies

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

330W Tc

N-Channel

8m Ω @ 75A, 10V

4V @ 250μA

3650pF @ 25V

75A Tc

150nC @ 10V

55V

10V

±20V

NO

SILICON

3

EAR99

AVALANCHE RATED

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-220AB

75A

0.008Ohm

560A

55V

470 mJ

Non-RoHS Compliant

IRF3704ZSTRRPBF vs IRF3305
IRF3707S

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tube

HEXFET®

2000

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

87W Tc

N-Channel

12.5m Ω @ 15A, 10V

3V @ 250μA

1990pF @ 15V

62A Tc

19nC @ 4.5V

30V

4.5V 10V

±20V

-

-

-

EAR99

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

IRF3704ZSTRRPBF vs IRF3707S