Infineon Technologies IRF3706STRLPBF
- Part Number:
- IRF3706STRLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853939-IRF3706STRLPBF
- Description:
- MOSFET N-CH 20V 77A D2PAK
- ECAD Model:
-
- Datasheet:
- IRF3706(S,L)PbF
Infineon Technologies IRF3706STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3706STRLPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max88W Tc
- Element ConfigurationSingle
- Power Dissipation88W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2410pF @ 10V
- Current - Continuous Drain (Id) @ 25°C77A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 4.5V
- Rise Time87ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.8V 10V
- Vgs (Max)±12V
- Fall Time (Typ)4.8 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)77A
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- Input Capacitance2.41nF
- Drain to Source Resistance10.5mOhm
- Rds On Max8.5 mΩ
- RoHS StatusRoHS Compliant
IRF3706STRLPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2410pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 77A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 10.5mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.8V 10V), this device helps reduce its overall power consumption.
IRF3706STRLPBF Features
a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 10.5mOhm
a 20V drain to source voltage (Vdss)
IRF3706STRLPBF Applications
There are a lot of Infineon Technologies
IRF3706STRLPBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2410pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 77A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 10.5mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.8V 10V), this device helps reduce its overall power consumption.
IRF3706STRLPBF Features
a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 10.5mOhm
a 20V drain to source voltage (Vdss)
IRF3706STRLPBF Applications
There are a lot of Infineon Technologies
IRF3706STRLPBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF3706STRLPBF More Descriptions
Trans MOSFET N-CH 20V 77A 3-Pin(2 Tab) D2PAK T/R
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 20V, 77A, 8.5 MOHM, 23 NC QG, D2-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:77A; On Resistance, Rds(on):8.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 20V, 77A, 8.5 MOHM, 23 NC QG, D2-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:77A; On Resistance, Rds(on):8.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF3706STRLPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusVoltage - Rated DCCurrent RatingNumber of ElementsLead FreeECCN CodeView Compare
-
IRF3706STRLPBFSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)88W TcSingle88WN-Channel8.5mOhm @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V87ns20V2.8V 10V±12V4.8 ns17 ns77A12V20V2.41nF10.5mOhm8.5 mΩRoHS Compliant------ -
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)87W Tc-90WN-Channel9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V98ns20V4.5V 10V±20V--77A20V20V1.996nF13.5mOhm9 mΩRoHS Compliant20V77A1Lead Free-
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)--MOSFET (Metal Oxide)88W Tc--N-Channel8.5m Ω @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V-20V2.8V 10V±12V--------Non-RoHS Compliant-----
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®2000Obsolete1 (Unlimited)--MOSFET (Metal Oxide)87W Tc--N-Channel12.5m Ω @ 15A, 10V3V @ 250μA1990pF @ 15V62A Tc19nC @ 4.5V-30V4.5V 10V±20V--------Non-RoHS Compliant----EAR99
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