IRF3704STRLPBF

Infineon Technologies IRF3704STRLPBF

Part Number:
IRF3704STRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2853869-IRF3704STRLPBF
Description:
MOSFET N-CH 20V 77A D2PAK
ECAD Model:
Datasheet:
IRF3704(S,L)PbF

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Specifications
Infineon Technologies IRF3704STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3704STRLPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    77A
  • Number of Elements
    1
  • Power Dissipation-Max
    87W Tc
  • Power Dissipation
    90W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    9mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1996pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    77A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 4.5V
  • Rise Time
    98ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    77A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance
    1.996nF
  • Drain to Source Resistance
    13.5mOhm
  • Rds On Max
    9 mΩ
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRF3704STRLPBF Overview
A device's maximum input capacitance is 1996pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 77A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.The Drain-to-Source Resistance (DTS) of a MOSFET is 13.5mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

IRF3704STRLPBF Features
a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 13.5mOhm
a 20V drain to source voltage (Vdss)


IRF3704STRLPBF Applications
There are a lot of Infineon Technologies
IRF3704STRLPBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF3704STRLPBF More Descriptions
MOSFET N-CH 20V 77A D2PAK / Trans MOSFET N-CH 20V 77A 3-Pin(2 Tab) D2PAK T/R
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 20V, 64A, 9 MOHM, 19 NC QG, D2-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:77A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF3704STRLPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    RoHS Status
    Lead Free
    ECCN Code
    View Compare
  • IRF3704STRLPBF
    IRF3704STRLPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    20V
    MOSFET (Metal Oxide)
    77A
    1
    87W Tc
    90W
    N-Channel
    9mOhm @ 15A, 10V
    3V @ 250μA
    1996pF @ 10V
    77A Tc
    19nC @ 4.5V
    98ns
    20V
    4.5V 10V
    ±20V
    77A
    20V
    20V
    1.996nF
    13.5mOhm
    9 mΩ
    RoHS Compliant
    Lead Free
    -
    -
  • IRF3515STRLPBF
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    Cut Tape (CT)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    N-Channel
    45m Ω @ 25A, 10V
    4.5V @ 250μA
    2260pF @ 25V
    41A Tc
    107nC @ 10V
    -
    150V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF3706STRL
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    88W Tc
    -
    N-Channel
    8.5m Ω @ 15A, 10V
    2V @ 250μA
    2410pF @ 10V
    77A Tc
    35nC @ 4.5V
    -
    20V
    2.8V 10V
    ±12V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
  • IRF3707S
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    87W Tc
    -
    N-Channel
    12.5m Ω @ 15A, 10V
    3V @ 250μA
    1990pF @ 15V
    62A Tc
    19nC @ 4.5V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    EAR99
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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