Infineon Technologies IRF3704STRLPBF
- Part Number:
- IRF3704STRLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853869-IRF3704STRLPBF
- Description:
- MOSFET N-CH 20V 77A D2PAK
- Datasheet:
- IRF3704(S,L)PbF
Infineon Technologies IRF3704STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3704STRLPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC20V
- TechnologyMOSFET (Metal Oxide)
- Current Rating77A
- Number of Elements1
- Power Dissipation-Max87W Tc
- Power Dissipation90W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1996pF @ 10V
- Current - Continuous Drain (Id) @ 25°C77A Tc
- Gate Charge (Qg) (Max) @ Vgs19nC @ 4.5V
- Rise Time98ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)77A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage20V
- Input Capacitance1.996nF
- Drain to Source Resistance13.5mOhm
- Rds On Max9 mΩ
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRF3704STRLPBF Overview
A device's maximum input capacitance is 1996pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 77A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.The Drain-to-Source Resistance (DTS) of a MOSFET is 13.5mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRF3704STRLPBF Features
a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 13.5mOhm
a 20V drain to source voltage (Vdss)
IRF3704STRLPBF Applications
There are a lot of Infineon Technologies
IRF3704STRLPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1996pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 77A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.The Drain-to-Source Resistance (DTS) of a MOSFET is 13.5mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRF3704STRLPBF Features
a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 13.5mOhm
a 20V drain to source voltage (Vdss)
IRF3704STRLPBF Applications
There are a lot of Infineon Technologies
IRF3704STRLPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF3704STRLPBF More Descriptions
MOSFET N-CH 20V 77A D2PAK / Trans MOSFET N-CH 20V 77A 3-Pin(2 Tab) D2PAK T/R
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 20V, 64A, 9 MOHM, 19 NC QG, D2-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:77A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 20V, 64A, 9 MOHM, 19 NC QG, D2-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:77A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF3704STRLPBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusLead FreeECCN CodeView Compare
-
IRF3704STRLPBFSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)175°C-55°C20VMOSFET (Metal Oxide)77A187W Tc90WN-Channel9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V98ns20V4.5V 10V±20V77A20V20V1.996nF13.5mOhm9 mΩRoHS CompliantLead Free--
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---Cut Tape (CT)HEXFET®2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----N-Channel45m Ω @ 25A, 10V4.5V @ 250μA2260pF @ 25V41A Tc107nC @ 10V-150V-----------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--88W Tc-N-Channel8.5m Ω @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V-20V2.8V 10V±12V------Non-RoHS Compliant--
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®2000Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--87W Tc-N-Channel12.5m Ω @ 15A, 10V3V @ 250μA1990pF @ 15V62A Tc19nC @ 4.5V-30V4.5V 10V±20V------Non-RoHS Compliant-EAR99
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 October 2023
What Is CD4017BE CMOS Counter And How It Works?
Ⅰ. Overview of CD4017BE counterⅡ. Symbol, footprint and pin configuration of CD4017BEⅢ. Technical parameters of CD4017BEⅣ. What are the features of CD4017BE?Ⅴ. How does CD4017BE work?Ⅵ. What are... -
18 October 2023
Get to Know the MOC3063 Triac Driver
Ⅰ. What is an optocoupler?Ⅱ. Overview of MOC3063 optocouplerⅢ. Symbol, footprint and pin configuration of MOC3063Ⅳ. Technical parameters of MOC3063Ⅴ. What are the features of MOC3063?Ⅵ. Working principle... -
19 October 2023
TIP122 Darlington Transistor: Symbol, Features, Applications and More
Ⅰ. What is Darlington tube?Ⅱ. Overview of TIP122 transistorⅢ. Symbol and footprint of TIP122 transistorⅣ. Technical parameters of TIP122 transistorⅤ. What are the features of TIP122 transistor?Ⅵ. Pin... -
19 October 2023
LM3900N Quadruple Operational Amplifier: Equivalent, Working Principle and LM3900N vs LM3900DR
Ⅰ. Overview of LM3900NⅡ. Symbol and footprint of LM3900NⅢ. Technical parameters of LM3900NⅣ. What are the features of LM3900N?Ⅴ. Pin configuration of LM3900NⅥ. Circuit and working principle of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.