IRF3708PBF

Infineon Technologies IRF3708PBF

Part Number:
IRF3708PBF
Manufacturer:
Infineon Technologies
Ventron No:
2479330-IRF3708PBF
Description:
MOSFET N-CH 30V 62A TO-220AB
ECAD Model:
Datasheet:
IRF3708PBF

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Specifications
Infineon Technologies IRF3708PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3708PBF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2000
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Resistance
    12MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    62A
  • Number of Elements
    1
  • Power Dissipation-Max
    87W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    87W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7.2 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    12m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2417pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    62A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 4.5V
  • Rise Time
    50ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.8V 10V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    3.7 ns
  • Turn-Off Delay Time
    17.6 ns
  • Continuous Drain Current (ID)
    62A
  • Threshold Voltage
    2V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    248A
  • Dual Supply Voltage
    30V
  • Recovery Time
    65 ns
  • Nominal Vgs
    2 V
  • Height
    8.763mm
  • Length
    10.5156mm
  • Width
    4.69mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF3708PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2417pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 62A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [17.6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 248A.A turn-on delay time of 7.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (2.8V 10V).

IRF3708PBF Features
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17.6 ns
based on its rated peak drain current 248A.
a threshold voltage of 2V


IRF3708PBF Applications
There are a lot of Infineon Technologies
IRF3708PBF applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRF3708PBF More Descriptions
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 30 V 29 mOhm 24 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 30V 62A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 87 W
MOSFET, 30V, 62A, 12 MOHM, 24 NC QG, TO-220AB
Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 30V, 62A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:87W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:62A; Junction to Case Thermal Resistance A:1.73°C/W; Package / Case:TO-220AB; Power Dissipation Pd:87W; Power Dissipation Pd:87W; Pulse Current Idm:248A; Termination Type:Through Hole; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Product Comparison
The three parts on the right have similar specifications to IRF3708PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRF3708PBF
    IRF3708PBF
    14 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2000
    Not For New Designs
    1 (Unlimited)
    3
    Through Hole
    EAR99
    12MOhm
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    62A
    1
    87W Tc
    Single
    ENHANCEMENT MODE
    87W
    DRAIN
    7.2 ns
    N-Channel
    SWITCHING
    12m Ω @ 15A, 10V
    2V @ 250μA
    2417pF @ 15V
    62A Tc
    24nC @ 4.5V
    50ns
    2.8V 10V
    ±12V
    3.7 ns
    17.6 ns
    62A
    2V
    TO-220AB
    12V
    30V
    248A
    30V
    65 ns
    2 V
    8.763mm
    10.5156mm
    4.69mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF3704ZSTRRPBF
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    57W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    7.9mOhm @ 21A, 10V
    2.55V @ 250μA
    1220pF @ 10V
    67A Tc
    13nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D2PAK
    20V
    -
    -
    -
    -
    -
  • IRF3706STRLPBF
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    88W Tc
    Single
    -
    88W
    -
    -
    N-Channel
    -
    8.5mOhm @ 15A, 10V
    2V @ 250μA
    2410pF @ 10V
    77A Tc
    35nC @ 4.5V
    87ns
    2.8V 10V
    ±12V
    4.8 ns
    17 ns
    77A
    -
    -
    12V
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    D2PAK
    20V
    175°C
    -55°C
    2.41nF
    10.5mOhm
    8.5 mΩ
  • IRF3704STRLPBF
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    20V
    MOSFET (Metal Oxide)
    77A
    1
    87W Tc
    -
    -
    90W
    -
    -
    N-Channel
    -
    9mOhm @ 15A, 10V
    3V @ 250μA
    1996pF @ 10V
    77A Tc
    19nC @ 4.5V
    98ns
    4.5V 10V
    ±20V
    -
    -
    77A
    -
    -
    20V
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    D2PAK
    20V
    175°C
    -55°C
    1.996nF
    13.5mOhm
    9 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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