Infineon Technologies IRF3708PBF
- Part Number:
- IRF3708PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479330-IRF3708PBF
- Description:
- MOSFET N-CH 30V 62A TO-220AB
- Datasheet:
- IRF3708PBF
Infineon Technologies IRF3708PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3708PBF.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2000
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance12MOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Current Rating62A
- Number of Elements1
- Power Dissipation-Max87W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation87W
- Case ConnectionDRAIN
- Turn On Delay Time7.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs12m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2417pF @ 15V
- Current - Continuous Drain (Id) @ 25°C62A Tc
- Gate Charge (Qg) (Max) @ Vgs24nC @ 4.5V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)2.8V 10V
- Vgs (Max)±12V
- Fall Time (Typ)3.7 ns
- Turn-Off Delay Time17.6 ns
- Continuous Drain Current (ID)62A
- Threshold Voltage2V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)248A
- Dual Supply Voltage30V
- Recovery Time65 ns
- Nominal Vgs2 V
- Height8.763mm
- Length10.5156mm
- Width4.69mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF3708PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2417pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 62A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [17.6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 248A.A turn-on delay time of 7.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (2.8V 10V).
IRF3708PBF Features
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17.6 ns
based on its rated peak drain current 248A.
a threshold voltage of 2V
IRF3708PBF Applications
There are a lot of Infineon Technologies
IRF3708PBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2417pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 62A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [17.6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 248A.A turn-on delay time of 7.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (2.8V 10V).
IRF3708PBF Features
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17.6 ns
based on its rated peak drain current 248A.
a threshold voltage of 2V
IRF3708PBF Applications
There are a lot of Infineon Technologies
IRF3708PBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRF3708PBF More Descriptions
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 30 V 29 mOhm 24 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 30V 62A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 87 W
MOSFET, 30V, 62A, 12 MOHM, 24 NC QG, TO-220AB
Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 30V, 62A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:87W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:62A; Junction to Case Thermal Resistance A:1.73°C/W; Package / Case:TO-220AB; Power Dissipation Pd:87W; Power Dissipation Pd:87W; Pulse Current Idm:248A; Termination Type:Through Hole; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Single N-Channel 30 V 29 mOhm 24 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 30V 62A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 87 W
MOSFET, 30V, 62A, 12 MOHM, 24 NC QG, TO-220AB
Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 30V, 62A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:87W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:62A; Junction to Case Thermal Resistance A:1.73°C/W; Package / Case:TO-220AB; Power Dissipation Pd:87W; Power Dissipation Pd:87W; Pulse Current Idm:248A; Termination Type:Through Hole; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
The three parts on the right have similar specifications to IRF3708PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Max Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRF3708PBF14 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2000Not For New Designs1 (Unlimited)3Through HoleEAR9912MOhmFET General Purpose Power30VMOSFET (Metal Oxide)62A187W TcSingleENHANCEMENT MODE87WDRAIN7.2 nsN-ChannelSWITCHING12m Ω @ 15A, 10V2V @ 250μA2417pF @ 15V62A Tc24nC @ 4.5V50ns2.8V 10V±12V3.7 ns17.6 ns62A2VTO-220AB12V30V248A30V65 ns2 V8.763mm10.5156mm4.69mmNo SVHCNoROHS3 CompliantLead Free--------
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)------MOSFET (Metal Oxide)--57W Tc-----N-Channel-7.9mOhm @ 21A, 10V2.55V @ 250μA1220pF @ 10V67A Tc13nC @ 4.5V-4.5V 10V±20V------------------D2PAK20V-----
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)------MOSFET (Metal Oxide)--88W TcSingle-88W--N-Channel-8.5mOhm @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V87ns2.8V 10V±12V4.8 ns17 ns77A--12V20V---------RoHS Compliant-D2PAK20V175°C-55°C2.41nF10.5mOhm8.5 mΩ
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)-----20VMOSFET (Metal Oxide)77A187W Tc--90W--N-Channel-9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V98ns4.5V 10V±20V--77A--20V20V---------RoHS CompliantLead FreeD2PAK20V175°C-55°C1.996nF13.5mOhm9 mΩ
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