Infineon Technologies IKW20N60TFKSA1
- Part Number:
- IKW20N60TFKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2495112-IKW20N60TFKSA1
- Description:
- IGBT 600V 40A 166W TO247-3
- ECAD Model:
-
- Datasheet:
- IGBT Selection Guide
Infineon Technologies IKW20N60TFKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKW20N60TFKSA1.
- Factory Lead Time14 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Surface MountNO
- Transistor Element MaterialSILICON
- PackagingTube
- SeriesTrenchStop®
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part Number*KW20N60
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Operating Temperature (Max)175°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max166W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time41ns
- JEDEC-95 CodeTO-247AC
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)40A
- Turn On Time36 ns
- Test Condition400V, 20A, 12 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 20A
- Turn Off Time-Nom (toff)299 ns
- IGBT TypeTrench Field Stop
- Gate Charge120nC
- Current - Collector Pulsed (Icm)60A
- Td (on/off) @ 25°C18ns/199ns
- Switching Energy770μJ
- RoHS StatusROHS3 Compliant
IKW20N60TFKSA1 Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5?s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP? and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1
for target applications
Pb-free lead plating; RoHS compliant
IKW20N60TFKSA1 More Descriptions
Trans IGBT Chip N=-CH 600V 40A 166000mW 3-Pin(3 Tab) TO-247 Tube
IKW20N60T Series 600 V 40 A Through Hole TRENCHSTOP IGBT -PG-TO247-3
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHSInfineon SCT
IGBT, N, 600V, 20A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.05V; Power Dissipation Pd: 166W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; Operating Temper
IGBT, N, 600V, 20A, TO-247; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.05V; Power Dissipation:166W; Case Style:TO-247; Termination Type:Through Hole; Transistor Polarity:N; RoHS Compliant: Yes
Configuration = Single / Continuous Collector Current (Ic) A = 20 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 166 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
IKW20N60T Series 600 V 40 A Through Hole TRENCHSTOP IGBT -PG-TO247-3
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHSInfineon SCT
IGBT, N, 600V, 20A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.05V; Power Dissipation Pd: 166W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; Operating Temper
IGBT, N, 600V, 20A, TO-247; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.05V; Power Dissipation:166W; Case Style:TO-247; Termination Type:Through Hole; Transistor Polarity:N; RoHS Compliant: Yes
Configuration = Single / Continuous Collector Current (Ic) A = 20 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 166 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
The three parts on the right have similar specifications to IKW20N60TFKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeReverse Recovery TimeJEDEC-95 CodeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusMountNumber of PinsMax Operating TemperatureMin Operating TemperatureMax Power DissipationReference StandardElement ConfigurationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageLead FreeOperating TemperaturePower DissipationRadiation HardeningView Compare
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IKW20N60TFKSA114 WeeksThrough HoleTO-247-3NOSILICONTubeTrenchStop®2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)SINGLENOT SPECIFIEDNOT SPECIFIED*KW20N603R-PSFM-T3Not Qualified175°C1SINGLE WITH BUILT-IN DIODECOLLECTORStandard166WPOWER CONTROLN-CHANNEL41nsTO-247AC600V40A36 ns400V, 20A, 12 Ω, 15V2.05V @ 15V, 20A299 nsTrench Field Stop120nC60A18ns/199ns770μJROHS3 Compliant--------------- -
14 WeeksThrough HoleTO-247-3--TubeTrenchStop®2007-yesLast Time Buy1 (Unlimited)3EAR99--NOT SPECIFIEDNOT SPECIFIED*KW20N60----1-COLLECTORStandard-POWER CONTROLN-CHANNEL41 ns---36 ns400V, 20A, 12 Ω, 15V2.05V @ 15V, 20A299 nsTrench Field Stop120nC60A18ns/199ns770μJROHS3 CompliantThrough Hole3175°C-40°C166WAEC-Q101Single600V40A600VLead Free---
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16 WeeksThrough HoleTO-247-3NOSILICONTubeTrenchStop®2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)SINGLENOT SPECIFIEDNOT SPECIFIED-3R-PSFM-T3Not Qualified-1SINGLE WITH BUILT-IN DIODE-Standard326WPOWER CONTROLN-CHANNEL290ns-1200V50A61 ns600V, 25A, 23 Ω, 15V2.4V @ 15V, 25A397 nsTrench Field Stop115nC100A27ns/277ns2.65mJROHS3 Compliant------------40°C~175°C TJ--
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14 WeeksThrough HoleTO-247-3-SILICONTubeTrenchStop®2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)----3---1-COLLECTORStandard-POWER CONTROLN-CHANNEL200 nsTO-247AC1200V-82 ns600V, 25A, 22 Ω, 15V2.2V @ 15V, 25A790 nsNPT, Trench Field Stop155nC75A50ns/560ns4.2mJROHS3 CompliantThrough Hole3--190W-Single1.2kV50A1.2kVLead Free-40°C~150°C TJ190WNo
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