Infineon Technologies IKW20N60TAFKSA1
- Part Number:
- IKW20N60TAFKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2494957-IKW20N60TAFKSA1
- Description:
- IGBT 600V 40A 166W TO247-3
- Datasheet:
- IGBT Selection Guide
Infineon Technologies IKW20N60TAFKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKW20N60TAFKSA1.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- PackagingTube
- SeriesTrenchStop®
- Published2007
- Pbfree Codeyes
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- Max Power Dissipation166W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part Number*KW20N60
- Reference StandardAEC-Q101
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current40A
- Reverse Recovery Time41 ns
- Collector Emitter Breakdown Voltage600V
- Turn On Time36 ns
- Test Condition400V, 20A, 12 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 20A
- Turn Off Time-Nom (toff)299 ns
- IGBT TypeTrench Field Stop
- Gate Charge120nC
- Current - Collector Pulsed (Icm)60A
- Td (on/off) @ 25°C18ns/199ns
- Switching Energy770μJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IKW20N60TAFKSA1 Description
The IKW20N60TAFKSA1 is an IGBT in TRENCHSTOP? and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode.
IKW20N60TAFKSA1 Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5μs
Designed for : - Frequency Converters - Uninterrupted Power Supply
TRENCHSTOP? and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behaviour - very high switching speed - low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
IKW20N60TAFKSA1 Applications
General Uses Applications
The IKW20N60TAFKSA1 is an IGBT in TRENCHSTOP? and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode.
IKW20N60TAFKSA1 Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5μs
Designed for : - Frequency Converters - Uninterrupted Power Supply
TRENCHSTOP? and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behaviour - very high switching speed - low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
IKW20N60TAFKSA1 Applications
General Uses Applications
IKW20N60TAFKSA1 More Descriptions
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 3.5pF 50volts C0G /-0.05pF
Trans IGBT Chip N-CH 600V 40A 3-Pin TO-247 Tube
IGBT Transistors IGBT PRODUCTS TrenchStop
Compliant Through Hole Lead Free TO-247 3 Single 40 A 166 W
IKW20N60 - AUTOMOTIVE IGBT DISCR
IGBT, 40A I(C), 600V V(BR)CES, N
Trans IGBT Chip N-CH 600V 40A 3-Pin TO-247 Tube
IGBT Transistors IGBT PRODUCTS TrenchStop
Compliant Through Hole Lead Free TO-247 3 Single 40 A 166 W
IKW20N60 - AUTOMOTIVE IGBT DISCR
IGBT, 40A I(C), 600V V(BR)CES, N
The three parts on the right have similar specifications to IKW20N60TAFKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberReference StandardNumber of ElementsElement ConfigurationCase ConnectionInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusLead FreeSurface MountTransistor Element MaterialOperating TemperatureJESD-609 CodeTerminal FinishTerminal PositionPin CountJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Radiation HardeningPower DissipationJEDEC-95 CodeView Compare
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IKW20N60TAFKSA114 WeeksThrough HoleThrough HoleTO-247-33TubeTrenchStop®2007yesLast Time Buy1 (Unlimited)3EAR99175°C-40°C166WNOT SPECIFIEDNOT SPECIFIED*KW20N60AEC-Q1011SingleCOLLECTORStandardPOWER CONTROLN-CHANNEL600V40A41 ns600V36 ns400V, 20A, 12 Ω, 15V2.05V @ 15V, 20A299 nsTrench Field Stop120nC60A18ns/199ns770μJROHS3 CompliantLead Free-----------------
-
16 Weeks-Through HoleTO-247-3-TubeTrenchStop®2008yesActive1 (Unlimited)3EAR99---NOT SPECIFIEDNOT SPECIFIED--1--StandardPOWER CONTROLN-CHANNEL--290ns-61 ns600V, 25A, 23 Ω, 15V2.4V @ 15V, 25A397 nsTrench Field Stop115nC100A27ns/277ns2.65mJROHS3 Compliant-NOSILICON-40°C~175°C TJe3Tin (Sn)SINGLE3R-PSFM-T3Not QualifiedSINGLE WITH BUILT-IN DIODE326W1200V50A---
-
18 WeeksThrough HoleThrough HoleTO-247-33TubeTrenchStop®2004yesActive1 (Unlimited)3EAR99--170W--*KW20N60-1Single-StandardPOWER CONTROLN-CHANNEL600V40A112 ns600V37 ns400V, 20A, 14.6 Ω, 15V2.4V @ 15V, 20A241 nsTrench Field Stop120nC80A17ns/194ns800μJROHS3 CompliantLead Free-SILICON-40°C~175°C TJe3Tin (Sn)-3---170W--No--
-
14 WeeksThrough HoleThrough HoleTO-247-33TubeTrenchStop®2006yesActive1 (Unlimited)3EAR99--190W----1SingleCOLLECTORStandardPOWER CONTROLN-CHANNEL1.2kV50A200 ns1.2kV82 ns600V, 25A, 22 Ω, 15V2.2V @ 15V, 25A790 nsNPT, Trench Field Stop155nC75A50ns/560ns4.2mJROHS3 CompliantLead Free-SILICON-40°C~150°C TJe3Tin (Sn)-3----1200V-No190WTO-247AC
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