Infineon Technologies IKW25T120FKSA1
- Part Number:
- IKW25T120FKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2494347-IKW25T120FKSA1
- Description:
- IGBT 1200V 50A 190W TO247-3
- Datasheet:
- IKW25T120FKSA1
Infineon Technologies IKW25T120FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKW25T120FKSA1.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- SeriesTrenchStop®
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation190W
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation190W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current50A
- Reverse Recovery Time200 ns
- JEDEC-95 CodeTO-247AC
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Turn On Time82 ns
- Test Condition600V, 25A, 22 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 25A
- Turn Off Time-Nom (toff)790 ns
- IGBT TypeNPT, Trench Field Stop
- Gate Charge155nC
- Current - Collector Pulsed (Icm)75A
- Td (on/off) @ 25°C50ns/560ns
- Switching Energy4.2mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IKW25T120FKSA1 Description
IKW25T120FKSA1 is a type of low loss IGBT designed based on TrenchStop? and Fieldstop technology for 1200 V applications. It is able to deliver very tight parameter distribution, high ruggedness, temperature stable behavior, and low gate charge, making it well suited for frequency converters and uninterrupted power supply. Moreover, easy parallel switching capability can be provided on the basis of NPT technology due to positive temperature coefficient in VCE(sat).
IKW25T120FKSA1 Features
Tight parameter distribution High ruggedness, temperature stable behavior Low gate charge Low EMI Package: PG-TO-247-3
IKW25T120FKSA1 Applications
Frequency converters Uninterrupted power supply
IKW25T120FKSA1 is a type of low loss IGBT designed based on TrenchStop? and Fieldstop technology for 1200 V applications. It is able to deliver very tight parameter distribution, high ruggedness, temperature stable behavior, and low gate charge, making it well suited for frequency converters and uninterrupted power supply. Moreover, easy parallel switching capability can be provided on the basis of NPT technology due to positive temperature coefficient in VCE(sat).
IKW25T120FKSA1 Features
Tight parameter distribution High ruggedness, temperature stable behavior Low gate charge Low EMI Package: PG-TO-247-3
IKW25T120FKSA1 Applications
Frequency converters Uninterrupted power supply
IKW25T120FKSA1 More Descriptions
Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3 Tab) TO-247 Tube / IGBT 1200V 50A 190W TO247-3
IKW25T120FKSA1 Series 1200 V 50 A 190 W IGBT in TrenchStop - PG-TO247-3-1
IGBT, N, 1200V, 25A, TO-247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:190W; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
IKW25T120FKSA1 Series 1200 V 50 A 190 W IGBT in TrenchStop - PG-TO247-3-1
IGBT, N, 1200V, 25A, TO-247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:190W; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
The three parts on the right have similar specifications to IKW25T120FKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRadiation HardeningRoHS StatusLead FreeSurface MountTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationPower - MaxCurrent - Collector (Ic) (Max)Max Operating TemperatureMin Operating TemperatureReference StandardView Compare
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IKW25T120FKSA114 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~150°C TJTubeTrenchStop®2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)190W31Single190WCOLLECTORStandardPOWER CONTROLN-CHANNEL1.2kV50A200 nsTO-247AC1.2kV1200V82 ns600V, 25A, 22 Ω, 15V2.2V @ 15V, 25A790 nsNPT, Trench Field Stop155nC75A50ns/560ns4.2mJNoROHS3 CompliantLead Free---------------
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14 Weeks-Through HoleTO-247-3-SILICON-TubeTrenchStop®2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)-31--COLLECTORStandardPOWER CONTROLN-CHANNEL--41nsTO-247AC-600V36 ns400V, 20A, 12 Ω, 15V2.05V @ 15V, 20A299 nsTrench Field Stop120nC60A18ns/199ns770μJ-ROHS3 Compliant-NOSINGLENOT SPECIFIEDNOT SPECIFIED*KW20N60R-PSFM-T3Not Qualified175°CSINGLE WITH BUILT-IN DIODE166W40A---
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14 WeeksThrough HoleThrough HoleTO-247-33--TubeTrenchStop®2007-yesLast Time Buy1 (Unlimited)3EAR99-166W-1Single-COLLECTORStandardPOWER CONTROLN-CHANNEL600V40A41 ns-600V-36 ns400V, 20A, 12 Ω, 15V2.05V @ 15V, 20A299 nsTrench Field Stop120nC60A18ns/199ns770μJ-ROHS3 CompliantLead Free--NOT SPECIFIEDNOT SPECIFIED*KW20N60------175°C-40°CAEC-Q101
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16 Weeks-Through HoleTO-247-3-SILICON-40°C~175°C TJTubeTrenchStop®2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)-31---StandardPOWER CONTROLN-CHANNEL--290ns--1200V61 ns600V, 25A, 23 Ω, 15V2.4V @ 15V, 25A397 nsTrench Field Stop115nC100A27ns/277ns2.65mJ-ROHS3 Compliant-NOSINGLENOT SPECIFIEDNOT SPECIFIED-R-PSFM-T3Not Qualified-SINGLE WITH BUILT-IN DIODE326W50A---
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