Infineon Technologies IKW25N120T2

Name: IKW25N120T2
Brand: Infineon Technologies
SKU: 3587211-IKW25N120T2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IKW25N120T2

Manufacturer:: Infineon Technologies

Ventron No:: 3587211-IKW25N120T2

Description:: IGBT 1200V 50A 349W TO247-3

ECAD Model:

Datasheet:: IKW25N120T2

Specifications

Infineon Technologies IKW25N120T2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKW25N120T2.

Factory Lead Time
14 Weeks
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Published
2008
Pbfree Code
yes
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Subcategory
Insulated Gate BIP Transistors
Terminal Form
THROUGH-HOLE
Pin Count
3
Number of Elements
1
Power Dissipation-Max
349W
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
POWER CONTROL
Forward Voltage
1.65V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
50A
Reverse Recovery Time
195 ns
JEDEC-95 Code
TO-247AD
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.2V
Turn On Time
49 ns
Turn Off Time-Nom (toff)
504 ns
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.4V
Height
21.1mm
Length
16.13mm
Width
5.21mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

Description: The Infineon Technologies AG IKW25N120T2 is a single IGBT transistor with a maximum collector-emitter voltage of 1200V and a maximum collector current of 50A. It has a maximum power dissipation of 349W and is packaged in a TO247-3 package.

Features:
- Maximum collector-emitter voltage of 1200V
- Maximum collector current of 50A
- Maximum power dissipation of 349W
- Packaged in a TO247-3 package
- Low switching losses
- High current carrying capability
- High frequency operation
- Low on-state voltage drop

Applications: The Infineon Technologies AG IKW25N120T2 single IGBT transistor is suitable for a wide range of applications, including motor control, power conversion, and power switching. It is also suitable for use in high-power switching applications, such as UPS systems, solar inverters, and industrial motor drives.

Product Comparison

The three parts on the right have similar specifications to IKW25N120T2.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Surface Mount

Number of Pins

Published

Pbfree Code

Part Status

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Subcategory

Terminal Form

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Case Connection

Transistor Application

Forward Voltage

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Turn Off Time-Nom (toff)

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Mounting Type

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Moisture Sensitivity Level (MSL)

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Input Type

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Mount

Max Power Dissipation

Base Part Number

Lead Free

Power Dissipation

View Compare
IKW25N120T2

Infineon Technologies

14 Weeks

TO-247-3

NO

3

2008

yes

Active

3

EAR99

175°C

-40°C

Insulated Gate BIP Transistors

THROUGH-HOLE

3

1

349W

Single

COLLECTOR

POWER CONTROL

1.65V

N-CHANNEL

1.2kV

50A

195 ns

TO-247AD

1.2kV

2.2V

49 ns

504 ns

20V

6.4V

21.1mm

16.13mm

5.21mm

No SVHC

No

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IKW25N120H3FKSA1

Infineon Technologies

16 Weeks

TO-247-3

NO

-

2008

yes

Active

3

EAR99

-

-

-

-

3

1

-

-

-

POWER CONTROL

-

N-CHANNEL

-

-

290ns

-

-

-

61 ns

397 ns

-

-

-

-

-

-

-

ROHS3 Compliant

Through Hole

SILICON

-40°C~175°C TJ

Tube

TrenchStop®

e3

1 (Unlimited)

Tin (Sn)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

Standard

326W

1200V

50A

600V, 25A, 23 Ω, 15V

2.4V @ 15V, 25A

Trench Field Stop

115nC

100A

27ns/277ns

2.65mJ

-

-

-

-

-

IKW25N120T2 vs IKW25N120H3FKSA1
IKW20N60H3FKSA1

Infineon Technologies

18 Weeks

TO-247-3

-

3

2004

yes

Active

3

EAR99

-

-

-

-

3

1

-

Single

-

POWER CONTROL

-

N-CHANNEL

600V

40A

112 ns

-

600V

-

37 ns

241 ns

-

-

-

-

-

-

No

ROHS3 Compliant

Through Hole

SILICON

-40°C~175°C TJ

Tube

TrenchStop®

e3

1 (Unlimited)

Tin (Sn)

-

-

-

-

-

-

Standard

170W

-

-

400V, 20A, 14.6 Ω, 15V

2.4V @ 15V, 20A

Trench Field Stop

120nC

80A

17ns/194ns

800μJ

Through Hole

170W

*KW20N60

Lead Free

-

IKW25N120T2 vs IKW20N60H3FKSA1
IKW25T120FKSA1

Infineon Technologies

14 Weeks

TO-247-3

-

3

2006

yes

Active

3

EAR99

-

-

-

-

3

1

-

Single

COLLECTOR

POWER CONTROL

-

N-CHANNEL

1.2kV

50A

200 ns

TO-247AC

1.2kV

-

82 ns

790 ns

-

-

-

-

-

-

No

ROHS3 Compliant

Through Hole

SILICON

-40°C~150°C TJ

Tube

TrenchStop®

e3

1 (Unlimited)

Tin (Sn)

-

-

-

-

-

-

Standard

-

1200V

-

600V, 25A, 22 Ω, 15V

2.2V @ 15V, 25A

NPT, Trench Field Stop

155nC

75A

50ns/560ns

4.2mJ

Through Hole

190W

-

Lead Free

190W

IKW25N120T2 vs IKW25T120FKSA1