Infineon Technologies IKW25N120H3FKSA1

Trans IGBT Chip N-CH 1200V 50A 326000mW Automotive 3-Pin(3 Tab) TO-247 Tube
IGBTs - Single, Transistors N-Channel, PG-TO247-3 50A 1200V 326W Through Hole
IKW25N120H3 Series 1200 V 25 A Through Hole TRENCHSTOP™ IGBT -PG-TO247-3
1200 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHSInfineon SCT
Continuous Collector Current:25A; Collector Emitter Saturation Voltage:2.4V; Power Dissipation:326W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C; Transistor Mounting:Through Hole; Msl:- Rohs Compliant: Yes |Infineon IKW25N120H3FKSA1.
IGBT DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to 175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:326W
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding inverters; Solar inverters; UPS; All hard switching applications