Global Power Technologies Group GP2M012A080NG

Name: GP2M012A080NG
Brand: Global Power Technologies Group
SKU: 4538891-GP2M012A080NG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP2M012A080NG

Manufacturer:: Global Power Technologies Group

Ventron No:: 4538891-GP2M012A080NG

Description:: MOSFET N-CH 800V 12A TO3PN

ECAD Model:

Datasheet:: GP2M012A080NG

Specifications

Global Power Technologies Group GP2M012A080NG technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP2M012A080NG.

Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PN
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
416W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3370pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
79nC @ 10V
Drain to Source Voltage (Vdss)
800V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP2M012A080NG Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3370pF @ 25V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

GP2M012A080NG Features
a 800V drain to source voltage (Vdss)

GP2M012A080NG Applications
There are a lot of SemiQ
GP2M012A080NG applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

GP2M012A080NG More Descriptions

MOSFET N-CH 800V 12A TO3PN

Product Comparison

The three parts on the right have similar specifications to GP2M012A080NG.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP2M012A080NG

Global Power Technologies Group

Through Hole

TO-3P-3, SC-65-3

TO-3PN

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

416W Tc

N-Channel

650mOhm @ 6A, 10V

5V @ 250μA

3370pF @ 25V

12A Tc

79nC @ 10V

800V

10V

±30V

-
GP2M009A090NG

Global Power Technologies Group

Through Hole

TO-3P-3, SC-65-3

TO-3PN

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

312W Tc

N-Channel

1.4Ohm @ 4.5A, 10V

4V @ 250μA

2740pF @ 25V

9A Tc

72nC @ 10V

900V

10V

±30V

GP2M012A080NG vs GP2M009A090NG
GP2M002A065CG

Global Power Technologies Group

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

D-Pak

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

52W Tc

N-Channel

4.6Ohm @ 900mA, 10V

5V @ 250μA

353pF @ 25V

1.8A Tc

8.5nC @ 10V

650V

10V

±30V

GP2M012A080NG vs GP2M002A065CG
GP2M002A065HG

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

52W Tc

N-Channel

4.6Ohm @ 900mA, 10V

5V @ 250μA

353pF @ 25V

1.8A Tc

8.5nC @ 10V

650V

10V

±30V

GP2M012A080NG vs GP2M002A065HG