Global Power Technologies Group GP2M002A065HG

Name: GP2M002A065HG
Brand: Global Power Technologies Group
SKU: 3070570-GP2M002A065HG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP2M002A065HG

Manufacturer:: Global Power Technologies Group

Ventron No:: 3070570-GP2M002A065HG

Description:: MOSFET N-CH 650V 1.8A TO220

ECAD Model:

Datasheet:: GP2M002A065HG

Specifications

Global Power Technologies Group GP2M002A065HG technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP2M002A065HG.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
52W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4.6Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
353pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.8A Tc
Gate Charge (Qg) (Max) @ Vgs
8.5nC @ 10V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP2M002A065HG Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 353pF @ 25V.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

GP2M002A065HG Features
a 650V drain to source voltage (Vdss)

GP2M002A065HG Applications
There are a lot of SemiQ
GP2M002A065HG applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

GP2M002A065HG More Descriptions

MOSFET N-CH 650V 1.8A TO220

Product Comparison

The three parts on the right have similar specifications to GP2M002A065HG.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP2M002A065HG

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

52W Tc

N-Channel

4.6Ohm @ 900mA, 10V

5V @ 250μA

353pF @ 25V

1.8A Tc

8.5nC @ 10V

650V

10V

±30V

-
GP2M002A065CG

Global Power Technologies Group

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

D-Pak

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

52W Tc

N-Channel

4.6Ohm @ 900mA, 10V

5V @ 250μA

353pF @ 25V

1.8A Tc

8.5nC @ 10V

650V

10V

±30V

GP2M002A065HG vs GP2M002A065CG
GP2M004A060PG

Global Power Technologies Group

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-PAK

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

86.2W Tc

N-Channel

2.5Ohm @ 2A, 10V

5V @ 250μA

545pF @ 25V

4A Tc

12nC @ 10V

600V

10V

±30V

GP2M002A065HG vs GP2M004A060PG
GP2M020A050F

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

48W Tc

N-Channel

300mOhm @ 9A, 10V

5V @ 250μA

2880pF @ 25V

18A Tc

44nC @ 10V

500V

10V

±30V

GP2M002A065HG vs GP2M020A050F