Global Power Technologies Group GP2M020A050F

Name: GP2M020A050F
Brand: Global Power Technologies Group
SKU: 2852239-GP2M020A050F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP2M020A050F

Manufacturer:: Global Power Technologies Group

Ventron No:: 2852239-GP2M020A050F

Description:: MOSFET N-CH 500V 18A TO220F

ECAD Model:

Datasheet:: GP2M020A050F

Specifications

Global Power Technologies Group GP2M020A050F technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP2M020A050F.

Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
48W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
300mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2880pF @ 25V
Current - Continuous Drain (Id) @ 25°C
18A Tc
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP2M020A050F Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2880pF @ 25V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

GP2M020A050F Features
a 500V drain to source voltage (Vdss)

GP2M020A050F Applications
There are a lot of SemiQ
GP2M020A050F applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

GP2M020A050F More Descriptions

MOSFET N-CH 500V 18A TO220F

Product Comparison

The three parts on the right have similar specifications to GP2M020A050F.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP2M020A050F

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

48W Tc

N-Channel

300mOhm @ 9A, 10V

5V @ 250μA

2880pF @ 25V

18A Tc

44nC @ 10V

500V

10V

±30V

-
GP2M005A060HG

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

98.4W Tc

N-Channel

2.1Ohm @ 2.1A, 10V

5V @ 250μA

658pF @ 25V

4.2A Tc

14nC @ 10V

600V

10V

±30V

GP2M020A050F vs GP2M005A060HG
GP2M009A090NG

Global Power Technologies Group

Through Hole

TO-3P-3, SC-65-3

TO-3PN

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

312W Tc

N-Channel

1.4Ohm @ 4.5A, 10V

4V @ 250μA

2740pF @ 25V

9A Tc

72nC @ 10V

900V

10V

±30V

GP2M020A050F vs GP2M009A090NG
GP2M004A060PG

Global Power Technologies Group

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-PAK

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

86.2W Tc

N-Channel

2.5Ohm @ 2A, 10V

5V @ 250μA

545pF @ 25V

4A Tc

12nC @ 10V

600V

10V

±30V

GP2M020A050F vs GP2M004A060PG