Global Power Technologies Group GP2M004A060PG

Name: GP2M004A060PG
Brand: Global Power Technologies Group
SKU: 3070471-GP2M004A060PG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP2M004A060PG

Manufacturer:: Global Power Technologies Group

Ventron No:: 3070471-GP2M004A060PG

Description:: MOSFET N-CH 600V 4A IPAK

ECAD Model:

Datasheet:: GP2M004A060PG

Specifications

Global Power Technologies Group GP2M004A060PG technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP2M004A060PG.

Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
86.2W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
545pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4A Tc
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP2M004A060PG Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 545pF @ 25V maximal input capacitance.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

GP2M004A060PG Features
a 600V drain to source voltage (Vdss)

GP2M004A060PG Applications
There are a lot of SemiQ
GP2M004A060PG applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

GP2M004A060PG More Descriptions

MOSFET N-CH 600V 4A IPAK

Product Comparison

The three parts on the right have similar specifications to GP2M004A060PG.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP2M004A060PG

Global Power Technologies Group

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-PAK

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

86.2W Tc

N-Channel

2.5Ohm @ 2A, 10V

5V @ 250μA

545pF @ 25V

4A Tc

12nC @ 10V

600V

10V

±30V

-
GP2M008A060CG

Global Power Technologies Group

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

D-Pak

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

120W Tc

N-Channel

1.2Ohm @ 3.75A, 10V

5V @ 250μA

1063pF @ 25V

7.5A Tc

23nC @ 10V

600V

10V

±30V

GP2M004A060PG vs GP2M008A060CG
GP2M009A090NG

Global Power Technologies Group

Through Hole

TO-3P-3, SC-65-3

TO-3PN

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

312W Tc

N-Channel

1.4Ohm @ 4.5A, 10V

4V @ 250μA

2740pF @ 25V

9A Tc

72nC @ 10V

900V

10V

±30V

GP2M004A060PG vs GP2M009A090NG
GP2M002A065HG

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

52W Tc

N-Channel

4.6Ohm @ 900mA, 10V

5V @ 250μA

353pF @ 25V

1.8A Tc

8.5nC @ 10V

650V

10V

±30V

GP2M004A060PG vs GP2M002A065HG