Global Power Technologies Group GP2M010A060H

Name: GP2M010A060H
Brand: Global Power Technologies Group
SKU: 3586411-GP2M010A060H
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP2M010A060H

Manufacturer:: Global Power Technologies Group

Ventron No:: 3586411-GP2M010A060H

Description:: MOSFET N-CH 600V 10A TO220

ECAD Model:

Datasheet:: GP2M010A060H

Specifications

Global Power Technologies Group GP2M010A060H technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP2M010A060H.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
198W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
700mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1660pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP2M010A060H Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1660pF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

GP2M010A060H Features
a 600V drain to source voltage (Vdss)

GP2M010A060H Applications
There are a lot of SemiQ
GP2M010A060H applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

GP2M010A060H More Descriptions

MOSFET N-CH 600V 10A TO220

Product Comparison

The three parts on the right have similar specifications to GP2M010A060H.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP2M010A060H

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

198W Tc

N-Channel

700mOhm @ 5A, 10V

5V @ 250μA

1660pF @ 25V

10A Tc

35nC @ 10V

600V

10V

±30V

-
GP2M002A065HG

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

52W Tc

N-Channel

4.6Ohm @ 900mA, 10V

5V @ 250μA

353pF @ 25V

1.8A Tc

8.5nC @ 10V

650V

10V

±30V

GP2M010A060H vs GP2M002A065HG
GP2M004A060PG

Global Power Technologies Group

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-PAK

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

86.2W Tc

N-Channel

2.5Ohm @ 2A, 10V

5V @ 250μA

545pF @ 25V

4A Tc

12nC @ 10V

600V

10V

±30V

GP2M010A060H vs GP2M004A060PG
GP2M005A050PG

Global Power Technologies Group

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-PAK

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

98.4W Tc

N-Channel

1.5Ohm @ 2.25A, 10V

5V @ 250μA

645pF @ 25V

4.5A Tc

15nC @ 10V

500V

10V

±30V

GP2M010A060H vs GP2M005A050PG