Global Power Technologies Group GP2M008A060CG
- Part Number:
- GP2M008A060CG
- Manufacturer:
- Global Power Technologies Group
- Ventron No:
- 3586400-GP2M008A060CG
- Description:
- MOSFET N-CH 600V 7.5A DPAK
- Datasheet:
- GP2M008A060CG
Global Power Technologies Group GP2M008A060CG technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP2M008A060CG.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max120W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.2Ohm @ 3.75A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1063pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.5A Tc
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
GP2M008A060CG Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1063pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
GP2M008A060CG Features
a 600V drain to source voltage (Vdss)
GP2M008A060CG Applications
There are a lot of SemiQ
GP2M008A060CG applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1063pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
GP2M008A060CG Features
a 600V drain to source voltage (Vdss)
GP2M008A060CG Applications
There are a lot of SemiQ
GP2M008A060CG applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
GP2M008A060CG More Descriptions
MOSFET N-CH 600V 7.5A DPAK
The three parts on the right have similar specifications to GP2M008A060CG.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)View Compare
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GP2M008A060CGSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)120W TcN-Channel1.2Ohm @ 3.75A, 10V5V @ 250μA1063pF @ 25V7.5A Tc23nC @ 10V600V10V±30V-
-
Through HoleTO-220-3TO-220-55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)98.4W TcN-Channel2.1Ohm @ 2.1A, 10V5V @ 250μA658pF @ 25V4.2A Tc14nC @ 10V600V10V±30V
-
Through HoleTO-220-3TO-220-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)198W TcN-Channel700mOhm @ 5A, 10V5V @ 250μA1660pF @ 25V10A Tc35nC @ 10V600V10V±30V
-
Through HoleTO-3P-3, SC-65-3TO-3PN-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)312W TcN-Channel1.4Ohm @ 4.5A, 10V4V @ 250μA2740pF @ 25V9A Tc72nC @ 10V900V10V±30V
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