Global Power Technologies Group GP2M005A060HG

Name: GP2M005A060HG
Brand: Global Power Technologies Group
SKU: 3587189-GP2M005A060HG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP2M005A060HG

Manufacturer:: Global Power Technologies Group

Ventron No:: 3587189-GP2M005A060HG

Description:: MOSFET N-CH 600V 4.2A TO220

ECAD Model:

Datasheet:: GP2M005A060HG

Specifications

Global Power Technologies Group GP2M005A060HG technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP2M005A060HG.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
98.4W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.1Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
658pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.2A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP2M005A060HG Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 658pF @ 25V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

GP2M005A060HG Features
a 600V drain to source voltage (Vdss)

GP2M005A060HG Applications
There are a lot of SemiQ
GP2M005A060HG applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

GP2M005A060HG More Descriptions

MOSFET N-CH 600V 4.2A TO220

Product Comparison

The three parts on the right have similar specifications to GP2M005A060HG.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP2M005A060HG

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

98.4W Tc

N-Channel

2.1Ohm @ 2.1A, 10V

5V @ 250μA

658pF @ 25V

4.2A Tc

14nC @ 10V

600V

10V

±30V

-
GP2M002A065HG

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

52W Tc

N-Channel

4.6Ohm @ 900mA, 10V

5V @ 250μA

353pF @ 25V

1.8A Tc

8.5nC @ 10V

650V

10V

±30V

GP2M005A060HG vs GP2M002A065HG
GP2M004A060PG

Global Power Technologies Group

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-PAK

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

86.2W Tc

N-Channel

2.5Ohm @ 2A, 10V

5V @ 250μA

545pF @ 25V

4A Tc

12nC @ 10V

600V

10V

±30V

GP2M005A060HG vs GP2M004A060PG
GP2M020A050F

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

48W Tc

N-Channel

300mOhm @ 9A, 10V

5V @ 250μA

2880pF @ 25V

18A Tc

44nC @ 10V

500V

10V

±30V

GP2M005A060HG vs GP2M020A050F