Fairchild/ON Semiconductor FGH40T65SH_F155
- Part Number:
- FGH40T65SH_F155
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2854707-FGH40T65SH_F155
- Description:
- IGBT 650V 80A 268W TO-247-3
- Datasheet:
- FGH40T65SH_F155
Fairchild/ON Semiconductor FGH40T65SH_F155 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH40T65SH_F155.
- Voltage - Collector Emitter Breakdown (Max):650V
- Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 40A
- Test Condition:400V, 40A, 6 Ohm, 15V
- Td (on/off) @ 25°C:19.2ns/65.6ns
- Switching Energy:1.01mJ (on), 297µJ (off)
- Supplier Device Package:TO-247 Long Leads
- Series:-
- Power - Max:268W
- Packaging:Tube
- Package / Case:TO-247-3
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Input Type:Standard
- IGBT Type:Trench Field Stop
- Gate Charge:72.2nC
- Current - Collector Pulsed (Icm):120A
- Current - Collector (Ic) (Max):80A
part#FGH40T65SH_F155, Manufacturer:Fairchild/ON Semiconductor is available at ventronchip.com, see description of FGH40T65SH_F155 as below .use the request quote form to request FGH40T65SH_F155 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for FGH40T65SH_F155 depending on the quantity required, availability and warehouse location.
FGH40T65SH_F155 More Descriptions
650V Fs GEN3 Trench Igbt - TO-247, Molded, 3 Leads, Jedec Ab Long Leads
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3 Tab) TO-247 Rail
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB
650 V, 40 A Field Stop Trench IGBT
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3 Tab) TO-247 Rail
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB
650 V, 40 A Field Stop Trench IGBT
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
The three parts on the right have similar specifications to FGH40T65SH_F155.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce(on) (Max) @ Vge, Ic:Test Condition:Td (on/off) @ 25°C:Switching Energy:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Type:IGBT Type:Gate Charge:Current - Collector Pulsed (Icm):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryMax Power DissipationBase Part NumberNumber of ElementsElement ConfigurationCase ConnectionInput TypeTurn On Delay TimePower - MaxTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReverse Recovery Time (trr):View Compare
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FGH40T65SH_F155650V2.1V @ 15V, 40A400V, 40A, 6 Ohm, 15V19.2ns/65.6ns1.01mJ (on), 297µJ (off)TO-247 Long Leads-268WTubeTO-247-3-55°C ~ 175°C (TJ)Through HoleStandardTrench Field Stop72.2nC120A80A----------------------------------------------------------
-
-----------------ACTIVE (Last Updated: 4 days ago)6 WeeksThrough HoleThrough HoleTO-247-336.39gSILICON-55°C~150°C TJTube2015e3yesActive1 (Unlimited)3EAR99Tin (Sn)LOW CONDUCTION LOSS8541.29.00.95Insulated Gate BIP Transistors290WFGH40N601SingleCOLLECTORStandard24 ns290WPOWER CONTROLN-CHANNEL112 ns600V80ATO-247AB600V1.8V110 ns400V, 40A, 10 Ω, 15V2.4V @ 15V, 40A190 nsField Stop120nC120A24ns/112ns1.19mJ (on), 460μJ (off)20V6.5V100ns20.6mm15.6mm4.7mmNo SVHCNoROHS3 CompliantLead Free-
-
600V2.9V @ 15V, 40A400V, 40A, 10 Ohm, 15V21ns/138ns1.23mJ (on), 380µJ (off)TO-247Automotive, AEC-Q101290WTubeTO-247-3-55°C ~ 150°C (TJ)Through HoleStandardField Stop121nC120A80A--------------------------------------------------------68ns
-
650V2.4V @ 15V, 40A400V, 40A, 10 Ohm, 15V23ns/126ns1.28mJ (on), 500µJ (off)TO-247Automotive, AEC-Q101290WTubeTO-247-3-55°C ~ 150°C (TJ)Through HoleStandardField Stop119nC120A80A--------------------------------------------------------65ns
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