Fairchild/ON Semiconductor FGH40N60UFTU
- Part Number:
- FGH40N60UFTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3587168-FGH40N60UFTU
- Description:
- IGBT 600V 80A 290W TO247
- Datasheet:
- FGH40N60UFTU
Fairchild/ON Semiconductor FGH40N60UFTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH40N60UFTU.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.39g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOW CONDUCTION LOSS
- HTS Code8541.29.00.95
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation290W
- Base Part NumberFGH40N60
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Turn On Delay Time24 ns
- Power - Max290W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time112 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current80A
- JEDEC-95 CodeTO-247AB
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.8V
- Turn On Time110 ns
- Test Condition400V, 40A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 40A
- Turn Off Time-Nom (toff)190 ns
- IGBT TypeField Stop
- Gate Charge120nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C24ns/112ns
- Switching Energy1.19mJ (on), 460μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Fall Time-Max (tf)100ns
- Height20.6mm
- Length15.6mm
- Width4.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description:
The ON Semiconductor FGH40N60UFTU is a single IGBT (Insulated Gate Bipolar Transistor) with a 600V blocking voltage and 80A continuous collector current rating. It is housed in a TO-247 package and has a power dissipation of 290W.
Features:
• 600V blocking voltage
• 80A continuous collector current rating
• 290W power dissipation
• TO-247 package
• Low gate charge
• Low on-state resistance
• High switching speed
• High surge current capability
Applications:
The FGH40N60UFTU IGBT is suitable for a wide range of applications, including motor control, power conversion, and power switching. It is also suitable for use in high-frequency switching applications, such as inverters, UPS systems, and solar inverters.
The ON Semiconductor FGH40N60UFTU is a single IGBT (Insulated Gate Bipolar Transistor) with a 600V blocking voltage and 80A continuous collector current rating. It is housed in a TO-247 package and has a power dissipation of 290W.
Features:
• 600V blocking voltage
• 80A continuous collector current rating
• 290W power dissipation
• TO-247 package
• Low gate charge
• Low on-state resistance
• High switching speed
• High surge current capability
Applications:
The FGH40N60UFTU IGBT is suitable for a wide range of applications, including motor control, power conversion, and power switching. It is also suitable for use in high-frequency switching applications, such as inverters, UPS systems, and solar inverters.
FGH40N60UFTU More Descriptions
FGH40N60UF Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247-3
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
IGBT, FIELD STOP, 600V, 40A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
IGBT, FIELD STOP, 600V, 40A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The three parts on the right have similar specifications to FGH40N60UFTU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryMax Power DissipationBase Part NumberNumber of ElementsElement ConfigurationCase ConnectionInput TypeTurn On Delay TimePower - MaxTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingRise Time-MaxPower DissipationReverse Recovery TimeVoltage - Collector Emitter Breakdown (Max):Vce(on) (Max) @ Vge, Ic:Test Condition:Td (on/off) @ 25°C:Switching Energy:Supplier Device Package:Series:Reverse Recovery Time (trr):Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Type:IGBT Type:Gate Charge:Current - Collector Pulsed (Icm):Current - Collector (Ic) (Max):Peak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Voltage - Collector Emitter Breakdown (Max)Max Junction Temperature (Tj)Continuous Collector CurrentView Compare
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FGH40N60UFTUACTIVE (Last Updated: 4 days ago)6 WeeksThrough HoleThrough HoleTO-247-336.39gSILICON-55°C~150°C TJTube2015e3yesActive1 (Unlimited)3EAR99Tin (Sn)LOW CONDUCTION LOSS8541.29.00.95Insulated Gate BIP Transistors290WFGH40N601SingleCOLLECTORStandard24 ns290WPOWER CONTROLN-CHANNEL112 ns600V80ATO-247AB600V1.8V110 ns400V, 40A, 10 Ω, 15V2.4V @ 15V, 40A190 nsField Stop120nC120A24ns/112ns1.19mJ (on), 460μJ (off)20V6.5V100ns20.6mm15.6mm4.7mmNo SVHCNoROHS3 CompliantLead Free-----------------------------
-
-4 WeeksThrough HoleThrough HoleTO-247-336.39gSILICON-55°C~175°C TJTube2013e3yesActive1 (Unlimited)3EAR99--8541.29.00.95Insulated Gate BIP Transistors349WFGH40N601SingleCOLLECTORStandard12 ns-POWER CONTROLN-CHANNEL92 ns600V80ATO-247AB600V1.9V37 ns400V, 40A, 6 Ω, 15V2.5V @ 15V, 40A132 nsField Stop119nC120A12ns/92ns1.3mJ (on), 260μJ (off)20V6V17ns20.6mm15.6mm4.7mmNo SVHCNoROHS3 CompliantLead FreeTin28ns349W90ns------------------------
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------------------------------------------------------------650V2.4V @ 15V, 40A400V, 40A, 10 Ohm, 15V23ns/126ns1.28mJ (on), 500µJ (off)TO-247Automotive, AEC-Q10165ns290WTubeTO-247-3-55°C ~ 150°C (TJ)Through HoleStandardField Stop119nC120A80A------
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ACTIVE (Last Updated: 4 days ago)4 WeeksThrough HoleThrough HoleTO-247-336.39g--55°C~175°C TJTube2013e3yesActive1 (Unlimited)-EAR99Tin (Sn)-8541.29.00.95Insulated Gate BIP Transistors555W--Single-Standard40 ns--N-CHANNEL475 ns1.2kV80A-1.2kV1.8V-600V, 40A, 10 Ω, 15V2.4V @ 15V, 40A-Trench Field Stop370nC160A40ns/475ns2.7mJ (on), 1.1mJ (off)25V7.5V-24.75mm15.87mm4.82mm--ROHS3 Compliant---555W65 ns------------------NOT SPECIFIEDnot_compliantNOT SPECIFIED1200V175°C80A
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