Fairchild/ON Semiconductor FGH40N60SFDTU
- Part Number:
- FGH40N60SFDTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2854665-FGH40N60SFDTU
- Description:
- IGBT 600V 80A 290W TO247
- Datasheet:
- FGH40N60SFDTU
Fairchild/ON Semiconductor FGH40N60SFDTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH40N60SFDTU.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time10 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.39g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOW CONDUCTION LOSS
- HTS Code8541.29.00.95
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation290W
- Base Part NumberFGH40N60
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Turn On Delay Time25 ns
- Power - Max290W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time115 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current80A
- Reverse Recovery Time45 ns
- JEDEC-95 CodeTO-247AB
- Collector Emitter Breakdown Voltage600V
- Turn On Time108 ns
- Test Condition400V, 40A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 40A
- Turn Off Time-Nom (toff)170 ns
- IGBT TypeField Stop
- Gate Charge120nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C25ns/115ns
- Switching Energy1.13mJ (on), 310μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Fall Time-Max (tf)90ns
- Height20.82mm
- Length15.87mm
- Width4.82mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FGH40N60SFDTU Description
ON Semiconductor's FGH40N60SFDTU transistor is a single IGBT transistor. FGH40N60SFDTU's operational temperature is -55°C to 150°C TJ, and its maximum power dissipation is 290W. It comes packaged in the TO-247-3 format. ON Semiconductor's new Field Stop IGBTs use Novel Field Stop IGBT Technology to provide the best performance for automotive chargers, inverters, and other applications that require low conduction and switching losses.
FGH40N60SFDTU Features
? High Current Capability
? Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
? High Input Impedance
? Fast Switching
? Qualified to Automotive Requirements of AEC?Q101 (FGH40N60SFDTU?F085)
? These Devices are Pb?Free and are RoHS Compliant
FGH40N60SFDTU Applications
? Automotive Chargers, Converters, High Voltage Auxiliaries
? Inverters, PFC, UPS
ON Semiconductor's FGH40N60SFDTU transistor is a single IGBT transistor. FGH40N60SFDTU's operational temperature is -55°C to 150°C TJ, and its maximum power dissipation is 290W. It comes packaged in the TO-247-3 format. ON Semiconductor's new Field Stop IGBTs use Novel Field Stop IGBT Technology to provide the best performance for automotive chargers, inverters, and other applications that require low conduction and switching losses.
FGH40N60SFDTU Features
? High Current Capability
? Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
? High Input Impedance
? Fast Switching
? Qualified to Automotive Requirements of AEC?Q101 (FGH40N60SFDTU?F085)
? These Devices are Pb?Free and are RoHS Compliant
FGH40N60SFDTU Applications
? Automotive Chargers, Converters, High Voltage Auxiliaries
? Inverters, PFC, UPS
FGH40N60SFDTU More Descriptions
IGBT 600V 80A 290W TO247 / Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3 Tab) TO-247 Tube
FGH40N60SFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
FGH40N60SFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
The three parts on the right have similar specifications to FGH40N60SFDTU.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryMax Power DissipationBase Part NumberNumber of ElementsElement ConfigurationCase ConnectionInput TypeTurn On Delay TimePower - MaxTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce(on) (Max) @ Vge, Ic:Test Condition:Td (on/off) @ 25°C:Switching Energy:Supplier Device Package:Series:Reverse Recovery Time (trr):Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Type:IGBT Type:Gate Charge:Current - Collector Pulsed (Icm):Current - Collector (Ic) (Max):Rise Time-MaxPower DissipationVoltage - Collector Emitter Breakdown (Max)Collector Emitter Saturation VoltageView Compare
-
FGH40N60SFDTUACTIVE (Last Updated: 4 days ago)10 WeeksThrough HoleThrough HoleTO-247-336.39gSILICON-55°C~150°C TJTube2004e3yesActive1 (Unlimited)3EAR99Tin (Sn)LOW CONDUCTION LOSS8541.29.00.95Insulated Gate BIP Transistors290WFGH40N601SingleCOLLECTORStandard25 ns290WPOWER CONTROLN-CHANNEL115 ns600V80A45 nsTO-247AB600V108 ns400V, 40A, 10 Ω, 15V2.9V @ 15V, 40A170 nsField Stop120nC120A25ns/115ns1.13mJ (on), 310μJ (off)20V6.5V90ns20.82mm15.87mm4.82mmNoROHS3 CompliantLead Free-----------------------
-
-------------------------------------------------------600V2.9V @ 15V, 40A400V, 40A, 10 Ohm, 15V21ns/138ns1.23mJ (on), 380µJ (off)TO-247Automotive, AEC-Q10168ns290WTubeTO-247-3-55°C ~ 150°C (TJ)Through HoleStandardField Stop121nC120A80A----
-
-------------------------------------------------------650V2.4V @ 15V, 40A400V, 40A, 10 Ohm, 15V23ns/126ns1.28mJ (on), 500µJ (off)TO-247Automotive, AEC-Q10165ns290WTubeTO-247-3-55°C ~ 150°C (TJ)Through HoleStandardField Stop119nC120A80A----
-
ACTIVE (Last Updated: 4 days ago)4 WeeksThrough HoleThrough HoleTO-247-336.39gSILICON-55°C~175°C TJTube2012e3yesActive1 (Unlimited)3EAR99Tin (Sn)-8541.29.00.95Insulated Gate BIP Transistors333W-1SingleCOLLECTORStandard--POWER CONTROLN-CHANNEL-1kV80A78 nsTO-247AB1kV76 ns600V, 40A, 10 Ω, 15V2.3V @ 15V, 40A305 nsTrench Field Stop265nC120A29ns/285ns2.35mJ (on), 1.15mJ (off)20V6.5V-20.82mm15.87mm4.82mmNoROHS3 CompliantLead Free------------------64ns333W1000V2.3V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
25 December 2023
N76E003AT20 Microcontroller: The Intelligent Engine of Embedded Systems
Ⅰ. What is N76E003AT20?Ⅱ. Characteristics of N76E003AT20 microcontrollerⅢ. N76E003AT20 dimension and packageⅣ. Operating modesⅤ. Who produces N76E003AT20 microcontroller?Ⅵ. N76E003AT20 microcontroller specificationsⅦ. What are the uses of N76E003AT20 microcontroller?Ⅷ.... -
25 December 2023
ULN2803ADWR Darlington Transistor Array Advantages, Market Trends, Applications, Pinout and Feature Description
Ⅰ. ULN2803ADWR overviewⅡ. What are the advantages of the ULN2803ADWR chip?Ⅲ. Market trends of ULN2803ADWRⅣ. Where is ULN2803ADWR mainly used?Ⅴ. Symbol, footprint and pin configuration of ULN2803ADWRⅥ. Precautions... -
26 December 2023
LM358DR Dual Operational Amplifier Characteristics, Applications, LM358DR vs LM358S
Ⅰ. LM358DR descriptionⅡ. Pin configuration of LM358DRⅢ. What are the characteristics of LM358DR?Ⅳ. How to adjust the gain setting of the LM358DR chip?Ⅴ. Schematic diagram of LM358DRⅥ. What... -
26 December 2023
An Overview of BAV99 Switching Diode
Ⅰ. What is a switching diode?Ⅱ. Introduction of BAV99Ⅲ. What are the functions of BAV99 diode?Ⅳ. Typical characteristics of BAV99 diodeⅤ. Technical parameters of BAV99 diodeⅥ. How to...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.