FGH40T120SMD

Fairchild/ON Semiconductor FGH40T120SMD

Part Number:
FGH40T120SMD
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2854558-FGH40T120SMD
Description:
IGBT 1200V 80A 555W TO247-3
ECAD Model:
Datasheet:
FGH40T120SMD

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Specifications
Fairchild/ON Semiconductor FGH40T120SMD technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH40T120SMD.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    4 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.39g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    555W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Element Configuration
    Single
  • Power Dissipation
    555W
  • Input Type
    Standard
  • Turn On Delay Time
    40 ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    475 ns
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    80A
  • Reverse Recovery Time
    65 ns
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    1.8V
  • Test Condition
    600V, 40A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 40A
  • Max Junction Temperature (Tj)
    175°C
  • Continuous Collector Current
    80A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    370nC
  • Current - Collector Pulsed (Icm)
    160A
  • Td (on/off) @ 25°C
    40ns/475ns
  • Switching Energy
    2.7mJ (on), 1.1mJ (off)
  • Gate-Emitter Voltage-Max
    25V
  • Gate-Emitter Thr Voltage-Max
    7.5V
  • Height
    24.75mm
  • Length
    15.87mm
  • Width
    4.82mm
  • RoHS Status
    ROHS3 Compliant
Description
FGH40T120SMD Description The FGH40T120SMD Gate Bipolar Transistor, also known as an IGBT, is a three-terminal power semiconductor device that is known for its high efficiency and quick switching. By integrating an isolated gate FET for the control input and a bipolar power transistor as a switch in a single device, the FGH40T120SMD IGBT combines the straightforward gate-drive characteristics of MOSFETs with the high-current and low–saturation–voltage performance of bipolar transistors.
FGH40T120SMD Features Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
100% of the Parts Tested for ILM(1)
High Input Impedance
FS Trench Technology, Positive Temperature Coefficient
High-Speed Switching
These Devices are Pb?Free and are RoHS Compliant
FGH40T120SMD Applications Solar Inverter
Welder
UPS & PFC applications


FGH40T120SMD More Descriptions
Trans IGBT Chip N=-CH 1200V 80A 555000mW 3-Pin(3 Tab) TO-247 Tube
FGH40T120 Series 1200 V 40 A Fs Trench IGBT Through Hole IGBT - TO-247-3
1200V 40A FS2 Trench IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
Product Comparison
The three parts on the right have similar specifications to FGH40T120SMD.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Element Configuration
    Power Dissipation
    Input Type
    Turn On Delay Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Max Junction Temperature (Tj)
    Continuous Collector Current
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    RoHS Status
    Voltage - Collector Emitter Breakdown (Max):
    Vce(on) (Max) @ Vge, Ic:
    Test Condition:
    Td (on/off) @ 25°C:
    Switching Energy:
    Supplier Device Package:
    Series:
    Reverse Recovery Time (trr):
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Type:
    IGBT Type:
    Gate Charge:
    Current - Collector Pulsed (Icm):
    Current - Collector (Ic) (Max):
    Transistor Element Material
    Number of Terminations
    Number of Elements
    Rise Time-Max
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Turn On Time
    Turn Off Time-Nom (toff)
    Radiation Hardening
    Lead Free
    View Compare
  • FGH40T120SMD
    FGH40T120SMD
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    -55°C~175°C TJ
    Tube
    2013
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    Insulated Gate BIP Transistors
    555W
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Single
    555W
    Standard
    40 ns
    N-CHANNEL
    475 ns
    1.2kV
    80A
    65 ns
    1.2kV
    1200V
    1.8V
    600V, 40A, 10 Ω, 15V
    2.4V @ 15V, 40A
    175°C
    80A
    Trench Field Stop
    370nC
    160A
    40ns/475ns
    2.7mJ (on), 1.1mJ (off)
    25V
    7.5V
    24.75mm
    15.87mm
    4.82mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FGH40N60SFDTU_F085
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    600V
    2.9V @ 15V, 40A
    400V, 40A, 10 Ohm, 15V
    21ns/138ns
    1.23mJ (on), 380µJ (off)
    TO-247
    Automotive, AEC-Q101
    68ns
    290W
    Tube
    TO-247-3
    -55°C ~ 150°C (TJ)
    Through Hole
    Standard
    Field Stop
    121nC
    120A
    80A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FGH40T65SH_F155
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    650V
    2.1V @ 15V, 40A
    400V, 40A, 6 Ohm, 15V
    19.2ns/65.6ns
    1.01mJ (on), 297µJ (off)
    TO-247 Long Leads
    -
    -
    268W
    Tube
    TO-247-3
    -55°C ~ 175°C (TJ)
    Through Hole
    Standard
    Trench Field Stop
    72.2nC
    120A
    80A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FGH40T100SMD
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    -55°C~175°C TJ
    Tube
    2012
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    Insulated Gate BIP Transistors
    333W
    -
    -
    -
    Single
    333W
    Standard
    -
    N-CHANNEL
    -
    1kV
    80A
    78 ns
    1kV
    1000V
    2.3V
    600V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    -
    -
    Trench Field Stop
    265nC
    120A
    29ns/285ns
    2.35mJ (on), 1.15mJ (off)
    20V
    6.5V
    20.82mm
    15.87mm
    4.82mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SILICON
    3
    1
    64ns
    COLLECTOR
    POWER CONTROL
    TO-247AB
    76 ns
    305 ns
    No
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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