Fairchild/ON Semiconductor FGH40T120SMD
- Part Number:
- FGH40T120SMD
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2854558-FGH40T120SMD
- Description:
- IGBT 1200V 80A 555W TO247-3
- Datasheet:
- FGH40T120SMD
Fairchild/ON Semiconductor FGH40T120SMD technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH40T120SMD.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.39g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.95
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation555W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Element ConfigurationSingle
- Power Dissipation555W
- Input TypeStandard
- Turn On Delay Time40 ns
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time475 ns
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current80A
- Reverse Recovery Time65 ns
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage1.8V
- Test Condition600V, 40A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 40A
- Max Junction Temperature (Tj)175°C
- Continuous Collector Current80A
- IGBT TypeTrench Field Stop
- Gate Charge370nC
- Current - Collector Pulsed (Icm)160A
- Td (on/off) @ 25°C40ns/475ns
- Switching Energy2.7mJ (on), 1.1mJ (off)
- Gate-Emitter Voltage-Max25V
- Gate-Emitter Thr Voltage-Max7.5V
- Height24.75mm
- Length15.87mm
- Width4.82mm
- RoHS StatusROHS3 Compliant
FGH40T120SMD Description
The FGH40T120SMD Gate Bipolar Transistor, also known as an IGBT, is a three-terminal power semiconductor device that is known for its high efficiency and quick switching. By integrating an isolated gate FET for the control input and a bipolar power transistor as a switch in a single device, the FGH40T120SMD IGBT combines the straightforward gate-drive characteristics of MOSFETs with the high-current and low–saturation–voltage performance of bipolar transistors.
FGH40T120SMD Features Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
100% of the Parts Tested for ILM(1)
High Input Impedance
FS Trench Technology, Positive Temperature Coefficient
High-Speed Switching
These Devices are Pb?Free and are RoHS Compliant
FGH40T120SMD Applications Solar Inverter
Welder
UPS & PFC applications
FGH40T120SMD Features Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
100% of the Parts Tested for ILM(1)
High Input Impedance
FS Trench Technology, Positive Temperature Coefficient
High-Speed Switching
These Devices are Pb?Free and are RoHS Compliant
FGH40T120SMD Applications Solar Inverter
Welder
UPS & PFC applications
FGH40T120SMD More Descriptions
Trans IGBT Chip N=-CH 1200V 80A 555000mW 3-Pin(3 Tab) TO-247 Tube
FGH40T120 Series 1200 V 40 A Fs Trench IGBT Through Hole IGBT - TO-247-3
1200V 40A FS2 Trench IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
FGH40T120 Series 1200 V 40 A Fs Trench IGBT Through Hole IGBT - TO-247-3
1200V 40A FS2 Trench IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
The three parts on the right have similar specifications to FGH40T120SMD.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishHTS CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Element ConfigurationPower DissipationInput TypeTurn On Delay TimePolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Collector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcMax Junction Temperature (Tj)Continuous Collector CurrentIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce(on) (Max) @ Vge, Ic:Test Condition:Td (on/off) @ 25°C:Switching Energy:Supplier Device Package:Series:Reverse Recovery Time (trr):Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Type:IGBT Type:Gate Charge:Current - Collector Pulsed (Icm):Current - Collector (Ic) (Max):Transistor Element MaterialNumber of TerminationsNumber of ElementsRise Time-MaxCase ConnectionTransistor ApplicationJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)Radiation HardeningLead FreeView Compare
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FGH40T120SMDACTIVE (Last Updated: 4 days ago)4 WeeksThrough HoleThrough HoleTO-247-336.39g-55°C~175°C TJTube2013e3yesActive1 (Unlimited)EAR99Tin (Sn)8541.29.00.95Insulated Gate BIP Transistors555WNOT SPECIFIEDnot_compliantNOT SPECIFIEDSingle555WStandard40 nsN-CHANNEL475 ns1.2kV80A65 ns1.2kV1200V1.8V600V, 40A, 10 Ω, 15V2.4V @ 15V, 40A175°C80ATrench Field Stop370nC160A40ns/475ns2.7mJ (on), 1.1mJ (off)25V7.5V24.75mm15.87mm4.82mmROHS3 Compliant------------------------------
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-------------------------------------------------600V2.9V @ 15V, 40A400V, 40A, 10 Ohm, 15V21ns/138ns1.23mJ (on), 380µJ (off)TO-247Automotive, AEC-Q10168ns290WTubeTO-247-3-55°C ~ 150°C (TJ)Through HoleStandardField Stop121nC120A80A-----------
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-------------------------------------------------650V2.1V @ 15V, 40A400V, 40A, 6 Ohm, 15V19.2ns/65.6ns1.01mJ (on), 297µJ (off)TO-247 Long Leads--268WTubeTO-247-3-55°C ~ 175°C (TJ)Through HoleStandardTrench Field Stop72.2nC120A80A-----------
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ACTIVE (Last Updated: 4 days ago)4 WeeksThrough HoleThrough HoleTO-247-336.39g-55°C~175°C TJTube2012e3yesActive1 (Unlimited)EAR99Tin (Sn)8541.29.00.95Insulated Gate BIP Transistors333W---Single333WStandard-N-CHANNEL-1kV80A78 ns1kV1000V2.3V600V, 40A, 10 Ω, 15V2.3V @ 15V, 40A--Trench Field Stop265nC120A29ns/285ns2.35mJ (on), 1.15mJ (off)20V6.5V20.82mm15.87mm4.82mmROHS3 Compliant------------------SILICON3164nsCOLLECTORPOWER CONTROLTO-247AB76 ns305 nsNoLead Free
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