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FGH40N60SMDF

Fairchild/ON Semiconductor FGH40N60SMDF

Part Number:
FGH40N60SMDF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3587257-FGH40N60SMDF
Description:
IGBT 600V 80A 349W TO247
ECAD Model:
Datasheet:
FGH40N60SMDF

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Specifications
Fairchild/ON Semiconductor FGH40N60SMDF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH40N60SMDF.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.39g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • HTS Code
    8541.29.00.95
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    349W
  • Base Part Number
    FGH40N60
  • Number of Elements
    1
  • Rise Time-Max
    28ns
  • Element Configuration
    Single
  • Power Dissipation
    349W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    12 ns
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    92 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    80A
  • Reverse Recovery Time
    90ns
  • JEDEC-95 Code
    TO-247AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.9V
  • Turn On Time
    37 ns
  • Test Condition
    400V, 40A, 6 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 40A
  • Turn Off Time-Nom (toff)
    132 ns
  • IGBT Type
    Field Stop
  • Gate Charge
    119nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    12ns/92ns
  • Switching Energy
    1.3mJ (on), 260μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    17ns
  • Height
    20.6mm
  • Length
    15.6mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FGH40N60SMDF IGBT Description
The FGH40N60SMDF IGBT employs ground-breaking field-stop IGBT technology, and ON Semiconductor's new series of field-stop 2nd generation IGBTs provides the best performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where minimal conduction and switching losses are crucial. It has high input impedance to avoid the loading effect to a large extent. 

FGH40N60SMDF IGBT Features
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A High current handling capability RoHS compliant Tightened parameter distribution High input impedance Maximum junction temperature: =175 °C Fast switching: EOFF: 6.5uJ/A Positive temperature co-efficient for an easy parallel operating

FGH40N60SMDF IGBT Applications
Consumer Appliances NTC Thermistors Automotive Applications Cable Load Single-Ended Quasi-Resonant Topology Class-E Power Amplifiers
FGH40N60SMDF More Descriptions
Trans IGBT Chip N=-CH 600V 80A 349000mW 3-Pin(3 Tab) TO-247 Tube
FGH40N60SMDF Series 600 V 80 A 92 ns Flange Mount Field Stop IGBT - TO-247
FAIRCHILD SEMICONDUCTOR FGH40N60SMDF IGBT Single Transistor, General Purpose, 80 A, 600 V, 349 W, 600 V, TO-247AB, 3 Pins
IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:349W
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Product Comparison
The three parts on the right have similar specifications to FGH40N60SMDF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    HTS Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Number of Elements
    Rise Time-Max
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Terminal Finish
    Additional Feature
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    View Compare
  • FGH40N60SMDF
    FGH40N60SMDF
    Fairchild/ON Semiconductor
    4 Weeks
    Tin
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~175°C TJ
    Tube
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    8541.29.00.95
    Insulated Gate BIP Transistors
    349W
    FGH40N60
    1
    28ns
    Single
    349W
    COLLECTOR
    Standard
    12 ns
    POWER CONTROL
    N-CHANNEL
    92 ns
    600V
    80A
    90ns
    TO-247AB
    600V
    1.9V
    37 ns
    400V, 40A, 6 Ω, 15V
    2.5V @ 15V, 40A
    132 ns
    Field Stop
    119nC
    120A
    12ns/92ns
    1.3mJ (on), 260μJ (off)
    20V
    6V
    17ns
    20.6mm
    15.6mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • FGH40N60UFTU
    FGH40N60UFTU
    Fairchild/ON Semiconductor
    6 Weeks
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    2015
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    8541.29.00.95
    Insulated Gate BIP Transistors
    290W
    FGH40N60
    1
    -
    Single
    -
    COLLECTOR
    Standard
    24 ns
    POWER CONTROL
    N-CHANNEL
    112 ns
    600V
    80A
    -
    TO-247AB
    600V
    1.8V
    110 ns
    400V, 40A, 10 Ω, 15V
    2.4V @ 15V, 40A
    190 ns
    Field Stop
    120nC
    120A
    24ns/112ns
    1.19mJ (on), 460μJ (off)
    20V
    6.5V
    100ns
    20.6mm
    15.6mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 4 days ago)
    Tin (Sn)
    LOW CONDUCTION LOSS
    290W
    -
    FGH40N60SMDF vs FGH40N60UFTU
  • FGH40N60SFDTU
    FGH40N60SFDTU
    Fairchild/ON Semiconductor
    10 Weeks
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    8541.29.00.95
    Insulated Gate BIP Transistors
    290W
    FGH40N60
    1
    -
    Single
    -
    COLLECTOR
    Standard
    25 ns
    POWER CONTROL
    N-CHANNEL
    115 ns
    600V
    80A
    45 ns
    TO-247AB
    600V
    -
    108 ns
    400V, 40A, 10 Ω, 15V
    2.9V @ 15V, 40A
    170 ns
    Field Stop
    120nC
    120A
    25ns/115ns
    1.13mJ (on), 310μJ (off)
    20V
    6.5V
    90ns
    20.82mm
    15.87mm
    4.82mm
    -
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 4 days ago)
    Tin (Sn)
    LOW CONDUCTION LOSS
    290W
    -
    FGH40N60SMDF vs FGH40N60SFDTU
  • FGH40T100SMD
    FGH40T100SMD
    Fairchild/ON Semiconductor
    4 Weeks
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~175°C TJ
    Tube
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    8541.29.00.95
    Insulated Gate BIP Transistors
    333W
    -
    1
    64ns
    Single
    333W
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    1kV
    80A
    78 ns
    TO-247AB
    1kV
    2.3V
    76 ns
    600V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    305 ns
    Trench Field Stop
    265nC
    120A
    29ns/285ns
    2.35mJ (on), 1.15mJ (off)
    20V
    6.5V
    -
    20.82mm
    15.87mm
    4.82mm
    -
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 4 days ago)
    Tin (Sn)
    -
    -
    1000V
    FGH40N60SMDF vs FGH40T100SMD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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