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FGH40T100SMD

Fairchild/ON Semiconductor FGH40T100SMD

Part Number:
FGH40T100SMD
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2854596-FGH40T100SMD
Description:
IGBT 1000V 80A 333W TO247-3
ECAD Model:
Datasheet:
FGH40T100SMD

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Specifications
Fairchild/ON Semiconductor FGH40T100SMD technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH40T100SMD.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    4 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.39g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    333W
  • Number of Elements
    1
  • Rise Time-Max
    64ns
  • Element Configuration
    Single
  • Power Dissipation
    333W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1kV
  • Max Collector Current
    80A
  • Reverse Recovery Time
    78 ns
  • JEDEC-95 Code
    TO-247AB
  • Collector Emitter Breakdown Voltage
    1kV
  • Voltage - Collector Emitter Breakdown (Max)
    1000V
  • Collector Emitter Saturation Voltage
    2.3V
  • Turn On Time
    76 ns
  • Test Condition
    600V, 40A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 40A
  • Turn Off Time-Nom (toff)
    305 ns
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    265nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    29ns/285ns
  • Switching Energy
    2.35mJ (on), 1.15mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Height
    20.82mm
  • Length
    15.87mm
  • Width
    4.82mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FGH40T100SMD Description
FGH40T100SMD is an IGBT Transistor manufactured by onsemi. Using innovative field stop trench IGBT technology, the ON Semiconductor FGH40T100SMD field stops trench IGBT offers the optimum performance for hard switching applications such as solar inverter, UPS, and welder and PFC applications. What's more, the FGH40T100SMD operates within ambient temperatures from -55 to 175°C and with a power dissipation of 333W.

FGH40T100SMD Features
Fast Switching
High Input Impedance
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
These Devices are Pb?Free and are RoHS Compliant

FGH40T100SMD Applications
UPS
Welder 
PFC
Uninterruptible Power Supply
Other Industrial
FGH40T100SMD More Descriptions
Trans IGBT Chip N-CH 1000V 80A 333000mW 3-Pin(3 Tab) TO-247 Rail
FGH40T100Series 1000 V 40 A Field Stop Trench IGBT Through Hole IGBT - TO-247-2
1000V 40A FS Trench Co-pack IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as UPS, welder and PFC applications.
Product Comparison
The three parts on the right have similar specifications to FGH40T100SMD.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Max Power Dissipation
    Number of Elements
    Rise Time-Max
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Base Part Number
    Turn On Delay Time
    Turn-Off Delay Time
    Fall Time-Max (tf)
    REACH SVHC
    Voltage - Collector Emitter Breakdown (Max):
    Vce(on) (Max) @ Vge, Ic:
    Test Condition:
    Td (on/off) @ 25°C:
    Switching Energy:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Type:
    IGBT Type:
    Gate Charge:
    Current - Collector Pulsed (Icm):
    Current - Collector (Ic) (Max):
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Max Junction Temperature (Tj)
    Continuous Collector Current
    View Compare
  • FGH40T100SMD
    FGH40T100SMD
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~175°C TJ
    Tube
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.29.00.95
    Insulated Gate BIP Transistors
    333W
    1
    64ns
    Single
    333W
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1kV
    80A
    78 ns
    TO-247AB
    1kV
    1000V
    2.3V
    76 ns
    600V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    305 ns
    Trench Field Stop
    265nC
    120A
    29ns/285ns
    2.35mJ (on), 1.15mJ (off)
    20V
    6.5V
    20.82mm
    15.87mm
    4.82mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FGH40N60SMDF
    FGH40N60SMDF
    Fairchild/ON Semiconductor
    -
    4 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~175°C TJ
    Tube
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    8541.29.00.95
    Insulated Gate BIP Transistors
    349W
    1
    28ns
    Single
    349W
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    600V
    80A
    90ns
    TO-247AB
    600V
    -
    1.9V
    37 ns
    400V, 40A, 6 Ω, 15V
    2.5V @ 15V, 40A
    132 ns
    Field Stop
    119nC
    120A
    12ns/92ns
    1.3mJ (on), 260μJ (off)
    20V
    6V
    20.6mm
    15.6mm
    4.7mm
    No
    ROHS3 Compliant
    Lead Free
    Tin
    FGH40N60
    12 ns
    92 ns
    17ns
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FGH40T100SMD vs FGH40N60SMDF
  • FGH40T65SH_F155
    FGH40T65SH_F155
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    650V
    2.1V @ 15V, 40A
    400V, 40A, 6 Ohm, 15V
    19.2ns/65.6ns
    1.01mJ (on), 297µJ (off)
    TO-247 Long Leads
    -
    268W
    Tube
    TO-247-3
    -55°C ~ 175°C (TJ)
    Through Hole
    Standard
    Trench Field Stop
    72.2nC
    120A
    80A
    -
    -
    -
    -
    -
    FGH40T100SMD vs FGH40T65SH_F155
  • FGH40T120SMD
    FGH40T120SMD
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    -
    -55°C~175°C TJ
    Tube
    2013
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    8541.29.00.95
    Insulated Gate BIP Transistors
    555W
    -
    -
    Single
    555W
    -
    Standard
    -
    N-CHANNEL
    1.2kV
    80A
    65 ns
    -
    1.2kV
    1200V
    1.8V
    -
    600V, 40A, 10 Ω, 15V
    2.4V @ 15V, 40A
    -
    Trench Field Stop
    370nC
    160A
    40ns/475ns
    2.7mJ (on), 1.1mJ (off)
    25V
    7.5V
    24.75mm
    15.87mm
    4.82mm
    -
    ROHS3 Compliant
    -
    -
    -
    40 ns
    475 ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    175°C
    80A
    FGH40T100SMD vs FGH40T120SMD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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