Fairchild/ON Semiconductor FGH40N65UFDTU

Name: FGH40N65UFDTU
Brand: Fairchild/ON Semiconductor
SKU: 2854502-FGH40N65UFDTU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FGH40N65UFDTU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2854502-FGH40N65UFDTU

Description:: IGBT 650V 80A 290W TO247

ECAD Model:

Datasheet:: FGH40N65UFDTU

Specifications

Fairchild/ON Semiconductor FGH40N65UFDTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH40N65UFDTU.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2008
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
290W
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
290W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
80A
Reverse Recovery Time
45 ns
JEDEC-95 Code
TO-247AB
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
650V
Turn On Time
69 ns
Test Condition
400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 40A
Turn Off Time-Nom (toff)
160 ns
IGBT Type
Field Stop
Gate Charge
120nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
24ns/112ns
Switching Energy
1.19mJ (on), 460μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
60ns
Height
20.6mm
Length
15.6mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

The ONSEMI FGH40N65UFDTU is a single IGBT transistor designed for use in high-power applications. This device features a maximum collector-emitter voltage of 650V, a maximum collector current of 80A, and a maximum power dissipation of 290W. It is housed in a TO247 package, making it suitable for use in a wide variety of applications. The FGH40N65UFDTU is designed to provide reliable performance and long-term reliability in high-power applications. It is also designed to be easy to install and maintain, making it an ideal choice for those looking for a reliable and efficient IGBT solution.

FGH40N65UFDTU More Descriptions

Trans IGBT Chip N=-CH 650V 80A 290000mW 3-Pin(3 Tab) TO-247AB Tube
Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
IGBT,N CH,W DIODE,650V,80A,TO247AB; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:650V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:650V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

Product Comparison

The three parts on the right have similar specifications to FGH40N65UFDTU.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

HTS Code

Subcategory

Max Power Dissipation

Number of Elements

Element Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lifecycle Status

JESD-609 Code

Terminal Finish

Base Part Number

Turn On Delay Time

Turn-Off Delay Time

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce(on) (Max) @ Vge, Ic:

Test Condition:

Td (on/off) @ 25°C:

Switching Energy:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Type:

IGBT Type:

Gate Charge:

Current - Collector Pulsed (Icm):

Current - Collector (Ic) (Max):

Reverse Recovery Time (trr):

View Compare
FGH40N65UFDTU

Fairchild/ON Semiconductor

12 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2008

yes

Active

1 (Unlimited)

3

EAR99

LOW CONDUCTION LOSS

8541.29.00.95

Insulated Gate BIP Transistors

290W

1

Single

COLLECTOR

Standard

290W

POWER CONTROL

N-CHANNEL

650V

80A

45 ns

TO-247AB

650V

650V

69 ns

400V, 40A, 10 Ω, 15V

2.4V @ 15V, 40A

160 ns

Field Stop

120nC

120A

24ns/112ns

1.19mJ (on), 460μJ (off)

20V

6.5V

60ns

20.6mm

15.6mm

4.7mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FGH40N60UFTU

Fairchild/ON Semiconductor

6 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2015

yes

Active

1 (Unlimited)

3

EAR99

LOW CONDUCTION LOSS

8541.29.00.95

Insulated Gate BIP Transistors

290W

1

Single

COLLECTOR

Standard

290W

POWER CONTROL

N-CHANNEL

600V

80A

-

TO-247AB

600V

1.8V

110 ns

400V, 40A, 10 Ω, 15V

2.4V @ 15V, 40A

190 ns

Field Stop

120nC

120A

24ns/112ns

1.19mJ (on), 460μJ (off)

20V

6.5V

100ns

20.6mm

15.6mm

4.7mm

No SVHC

No

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

e3

Tin (Sn)

FGH40N60

24 ns

112 ns

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FGH40N65UFDTU vs FGH40N60UFTU
FGH40T65SH_F155

Fairchild/ON Semiconductor

-

-

-

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-

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-

-

-

650V

2.1V @ 15V, 40A

400V, 40A, 6 Ohm, 15V

19.2ns/65.6ns

1.01mJ (on), 297µJ (off)

TO-247 Long Leads

-

268W

Tube

TO-247-3

-55°C ~ 175°C (TJ)

Through Hole

Standard

Trench Field Stop

72.2nC

120A

80A

-

FGH40N65UFDTU vs FGH40T65SH_F155
FGH40N65UFDTU_F085

Fairchild/ON Semiconductor

-

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-

-

650V

2.4V @ 15V, 40A

400V, 40A, 10 Ohm, 15V

23ns/126ns

1.28mJ (on), 500µJ (off)

TO-247

Automotive, AEC-Q101

290W

Tube

TO-247-3

-55°C ~ 150°C (TJ)

Through Hole

Standard

Field Stop

119nC

120A

80A

65ns

FGH40N65UFDTU vs FGH40N65UFDTU_F085

Certification

Related parts for FGH40N65UFDTU

FGH40N60SFTU

Fairchild/ON Semiconductor

IGBT 600V 80A 290W TO247
FGH40N60SMDF

Fairchild/ON Semiconductor

IGBT 600V 80A 349W TO247
FGH40N60UFTU

Fairchild/ON Semiconductor

IGBT 600V 80A 290W TO247
FGH40N60SFDTU_F085

Fairchild/ON Semiconductor

IGBT 600V 40A 290W TO247
FGH40T65SH_F155

Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-247-3
FGH40N60SFDTU

Fairchild/ON Semiconductor

IGBT 600V 80A 290W TO247
FGH40N65UFDTU_F085

Fairchild/ON Semiconductor

IGBT 650V 40A 290W TO247
FGH40T100SMD

Fairchild/ON Semiconductor

IGBT 1000V 80A 333W TO247-3
FGH40T120SMD

Fairchild/ON Semiconductor

IGBT 1200V 80A 555W TO247-3
FGH40T120SMD_F155

Fairchild/ON Semiconductor

IGBT 1200V 80A 555W TO247-3

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FGH40N65UFDTU Specification

Part Number	Manufacturers	Description	Stock	Price
FGH40N65UFDTU-F085 DISTI #FGH40N65UFDTU-F085	ON Semiconductor	N-CH / 40A 650V IGBT	180	1 $4.337 10 $3.776 100 $3.323 250 $3.1549 500 $2.8529 1000 $2.447 2500 $2.321
FGH40N65UFDTU DISTI #FGH40N65UFDTU	ON Semiconductor	IGBT 650V 80A 290W TO247 RoHS: Compliant	450	1 $3.53 10 $3.174 450 $2.46698 900 $2.21361 1350 $1.8669
FGH40N65UFDTU-F085 DISTI #FGH40N65UFDTU-F085	ON Semiconductor	IGBT 650V 40A 290W TO247 RoHS: Compliant	0	450 $3.65404
FGH40N65UFDTU DISTI #FGH40N65UFDTU	ON Semiconductor	650V, 40A FIELD STOP IGBT	450	30 $2.7456 100 $2.3808 250 $2.256
FGH40N65UFDTU-F085 DISTI #FGH40N65UFDTU-F085	ON Semiconductor	N-CH / 40A 650V IGBT	450	450 $3.2123
FGH40N65UFDTU-F085 DISTI #FGH40N65UFDTU-F085	ON Semiconductor	N-CH / 40A 650V IGBT	180	3 $4.32 10 $3.763 100 $3.312
FGH40N65UFDTU DISTI #FGH40N65UFDTU	ON Semiconductor	Trans IGBT Chip N-CH 650V 80A 3-Pin(3 Tab) TO-247A RoHS: Compliant	0	450 $1.59 900 $1.59 1800 $1.59 2700 $1.59 4500 $1.49
FGH40N65UFDTU_F085 DISTI #FGH40N65UFDTU_F085	ON Semiconductor	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - RoHS: Compliant	0	450 $2.39 900 $2.39 1800 $2.39 2700 $2.29 4500 $2.29
FGH40N65UFDTU DISTI #FGH40N65UFDTU	ON Semiconductor	FSPIGBT TO247 40A 650V / TUBE	0	1 $3.69 10 $2.99 100 $2.48 500 $2.24 1000 $1.91 2500 $1.82 10000 $1.72
FGH40N65UFDTU-F085 DISTI #FGH40N65UFDTU-F085	ON Semiconductor	FS P TO247 40A 650V AUTO / TUBE	0	1 $5.1 100 $4.2 250 $3.86 500 $3.6 1000 $3.39
FGH40N65UFDTU DISTI #FGH40N65UFDTU	ON Semiconductor	IGBT Transistors N-ch / 40A 650V RoHS: Compliant	163	1 $3.37 10 $2.86 100 $2.48 250 $2.35 500 $2.11
FGH40N65UFDTU-F085 DISTI #FGH40N65UFDTU-F085	ON Semiconductor	IGBT Transistors N-ch / 40A 650V IGBT RoHS: Compliant	192	1 $4.98 10 $4.23 100 $3.66 250 $3.48 500 $3.12 1000 $2.63 2500 $2.5
FGH40N65UFDTU DISTI #FGH40N65UFDTU	ON Semiconductor	TRANSISTOR IGBT N-CH 650V 80A TO247AB, TU	172	10 $1.96 50 $1.78 150 $1.61 300 $1.48
FGH40N65UFDTU DISTI #FGH40N65UFDTU	ON Semiconductor	TRANSISTOR IGBT N-CH 650V 80A TO247AB, EA	122	1 $3.28 10 $1.96 50 $1.78 150 $1.61 300 $1.48
FGH40N65UFDTU DISTI #FGH40N65UFDTU	ON Semiconductor	IGBT Chip	450	450 $2.9
FGH40N65UFDTU_F085 DISTI #FGH40N65UFDTU_F085	ON Semiconductor	Trans IGBT Chip N-CH 650V 80A 290000mW Automotive RoHS: Compliant	180	1 $4.32 10 $3.763 100 $3.312

FGH40N6~~(28)~~
FGH40N~~(31)~~
FGH40~~(49)~~
FGH4~~(49)~~
FGH~~(70)~~

Fairchild/ON Semiconductor FGH40N65UFDTU

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