Fairchild/ON Semiconductor FDMC8854
- Part Number:
- FDMC8854
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586033-FDMC8854
- Description:
- MOSFET N-CH 30V 15A POWER33
- Datasheet:
- FDMC8854
Fairchild/ON Semiconductor FDMC8854 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8854.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight165.33333mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2006
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance5.7MOhm
- Terminal FinishNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max2W Ta 41W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Case ConnectionDRAIN
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.7m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3405pF @ 10V
- Current - Continuous Drain (Id) @ 25°C15A Tc
- Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time31 ns
- Continuous Drain Current (ID)15A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)30A
- Dual Supply Voltage30V
- Nominal Vgs1.9 V
- Height725μm
- Length3.3mm
- Width3.3mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMC8854 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3405pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 31 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 30A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
FDMC8854 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 30A.
FDMC8854 Applications
There are a lot of ON Semiconductor
FDMC8854 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3405pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 31 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 30A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
FDMC8854 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 30A.
FDMC8854 Applications
There are a lot of ON Semiconductor
FDMC8854 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
FDMC8854 More Descriptions
N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ
N-Channel 30 V 5.7 mOhm Surface Mount Power Trench Mosfet - Power 33
RENESAS - ICL7660CBAZ-T - DC/DC-Ladungspumpen-Spannungsregler, einstellbar, 1.5V bis 10Vin, -10V bis -1.5V/45mAout, NSOIC-8
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:15A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4.4mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.9V
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:15A; Resistance, Rds On:0.0057ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:Power 33; Termination Type:SMD; Current, Idm Pulse:30A; Power Dissipation:2W; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
N-Channel 30 V 5.7 mOhm Surface Mount Power Trench Mosfet - Power 33
RENESAS - ICL7660CBAZ-T - DC/DC-Ladungspumpen-Spannungsregler, einstellbar, 1.5V bis 10Vin, -10V bis -1.5V/45mAout, NSOIC-8
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:15A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4.4mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.9V
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:15A; Resistance, Rds On:0.0057ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:Power 33; Termination Type:SMD; Current, Idm Pulse:30A; Power Dissipation:2W; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
The three parts on the right have similar specifications to FDMC8854.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeReach Compliance CodeJESD-30 CodeThreshold VoltageJEDEC-95 CodeDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)Additional FeatureDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Radiation HardeningNumber of ChannelsMax Junction Temperature (Tj)View Compare
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FDMC8854ACTIVE (Last Updated: 1 day ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8165.33333mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e4yesActive1 (Unlimited)8SMD/SMTEAR995.7MOhmNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDNOT SPECIFIEDNot Qualified12W Ta 41W TcSingleENHANCEMENT MODE2WDRAIN13 nsN-ChannelSWITCHING5.7m Ω @ 15A, 10V3V @ 250μA3405pF @ 10V15A Tc57nC @ 10V5ns4.5V 10V±20V5 ns31 ns15A20V30V30A30V1.9 V725μm3.3mm3.3mmNo SVHCROHS3 CompliantLead Free-------------
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ACTIVE (Last Updated: 6 days ago)10 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2009e3yesActive1 (Unlimited)5-EAR99-Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIEDNot Qualified12.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN14 nsN-ChannelSWITCHING2.2m Ω @ 20A, 10V2.5V @ 250μA4830pF @ 15V20A Ta 40A Tc86nC @ 10V6.8ns4.5V 10V±20V5.7 ns36 ns20A20V30V200A-1.7 V1.05mm3.3mm3.3mmNo SVHCROHS3 CompliantLead Freenot_compliantS-PDSO-N51.7VMO-240BA0.0022Ohm200 mJ------
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ACTIVE (Last Updated: 5 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8200mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2010e4yesActive1 (Unlimited)5-EAR9914.4MOhmNickel/Palladium/Gold (Ni/Pd/Au)Other TransistorsMOSFET (Metal Oxide)DUAL----12.3W Ta 36W TcSingleENHANCEMENT MODE2.3WDRAIN11 nsP-ChannelSWITCHING14.4m Ω @ 9.5A, 10V3V @ 250μA2865pF @ 15V9.5A Ta 20A Tc65nC @ 10V10ns4.5V 10V±25V26 ns44 ns9.5A25V-30V32A--750μm3.3mm3.3mmNo SVHCROHS3 CompliantLead Free-S-PDSO-N5-1.9V---ULTRA-LOW RESISTANCE30V40ANo--
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ACTIVE (Last Updated: 1 day ago)34 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)5-EAR996.1MOhmNickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIEDNot Qualified12.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN18 nsN-ChannelSWITCHING6.1m Ω @ 15A, 4.5V1.5V @ 250μA3365pF @ 15V15A Ta 20A Tc27.2nC @ 4.5V9ns2.5V 4.5V±12V6 ns35 ns15A12V30V60A-1.1 V1.05mm3.3mm3.3mmNo SVHCROHS3 CompliantLead Free-S-PDSO-N5800mV-----64A-1150°C
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