FDMC8854

Fairchild/ON Semiconductor FDMC8854

Part Number:
FDMC8854
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3586033-FDMC8854
Description:
MOSFET N-CH 30V 15A POWER33
ECAD Model:
Datasheet:
FDMC8854

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Specifications
Fairchild/ON Semiconductor FDMC8854 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8854.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    165.33333mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2006
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    5.7MOhm
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    2W Ta 41W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.7m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3405pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    15A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    57nC @ 10V
  • Rise Time
    5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5 ns
  • Turn-Off Delay Time
    31 ns
  • Continuous Drain Current (ID)
    15A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    30A
  • Dual Supply Voltage
    30V
  • Nominal Vgs
    1.9 V
  • Height
    725μm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMC8854 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3405pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 31 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 30A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

FDMC8854 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 30A.


FDMC8854 Applications
There are a lot of ON Semiconductor
FDMC8854 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
FDMC8854 More Descriptions
N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ
N-Channel 30 V 5.7 mOhm Surface Mount Power Trench Mosfet - Power 33
RENESAS - ICL7660CBAZ-T - DC/DC-Ladungspumpen-Spannungsregler, einstellbar, 1.5V bis 10Vin, -10V bis -1.5V/45mAout, NSOIC-8
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:15A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4.4mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.9V
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:15A; Resistance, Rds On:0.0057ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:Power 33; Termination Type:SMD; Current, Idm Pulse:30A; Power Dissipation:2W; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
Product Comparison
The three parts on the right have similar specifications to FDMC8854.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Reach Compliance Code
    JESD-30 Code
    Threshold Voltage
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Additional Feature
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Radiation Hardening
    Number of Channels
    Max Junction Temperature (Tj)
    View Compare
  • FDMC8854
    FDMC8854
    ACTIVE (Last Updated: 1 day ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    165.33333mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e4
    yes
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    5.7MOhm
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    5.7m Ω @ 15A, 10V
    3V @ 250μA
    3405pF @ 10V
    15A Tc
    57nC @ 10V
    5ns
    4.5V 10V
    ±20V
    5 ns
    31 ns
    15A
    20V
    30V
    30A
    30V
    1.9 V
    725μm
    3.3mm
    3.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC7660
    ACTIVE (Last Updated: 6 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    -
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    2.2m Ω @ 20A, 10V
    2.5V @ 250μA
    4830pF @ 15V
    20A Ta 40A Tc
    86nC @ 10V
    6.8ns
    4.5V 10V
    ±20V
    5.7 ns
    36 ns
    20A
    20V
    30V
    200A
    -
    1.7 V
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    not_compliant
    S-PDSO-N5
    1.7V
    MO-240BA
    0.0022Ohm
    200 mJ
    -
    -
    -
    -
    -
    -
  • FDMC6675BZ
    ACTIVE (Last Updated: 5 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    200mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e4
    yes
    Active
    1 (Unlimited)
    5
    -
    EAR99
    14.4MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    -
    1
    2.3W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    14.4m Ω @ 9.5A, 10V
    3V @ 250μA
    2865pF @ 15V
    9.5A Ta 20A Tc
    65nC @ 10V
    10ns
    4.5V 10V
    ±25V
    26 ns
    44 ns
    9.5A
    25V
    -30V
    32A
    -
    -
    750μm
    3.3mm
    3.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    S-PDSO-N5
    -1.9V
    -
    -
    -
    ULTRA-LOW RESISTANCE
    30V
    40A
    No
    -
    -
  • FDMC8651
    ACTIVE (Last Updated: 1 day ago)
    34 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    -
    EAR99
    6.1MOhm
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    9ns
    2.5V 4.5V
    ±12V
    6 ns
    35 ns
    15A
    12V
    30V
    60A
    -
    1.1 V
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    S-PDSO-N5
    800mV
    -
    -
    -
    -
    -
    64A
    -
    1
    150°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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