FDMC8676

Fairchild/ON Semiconductor FDMC8676

Part Number:
FDMC8676
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3554482-FDMC8676
Description:
MOSFET N-CH 30V 16A POWER33
ECAD Model:
Datasheet:
FDMC8676

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Specifications
Fairchild/ON Semiconductor FDMC8676 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8676.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • Terminal Finish
    NICKEL PALLADIUM GOLD
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-N5
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.3W Ta 41W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.9m Ω @ 14.7A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1.935pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    16A Ta 18A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    16A
  • Drain-source On Resistance-Max
    0.0059Ohm
  • Pulsed Drain Current-Max (IDM)
    60A
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    216 mJ
  • RoHS Status
    ROHS3 Compliant
Description
FDMC8676 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 216 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.935pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [16A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 60A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

FDMC8676 Features
the avalanche energy rating (Eas) is 216 mJ
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)


FDMC8676 Applications
There are a lot of Rochester Electronics, LLC
FDMC8676 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
FDMC8676 More Descriptions
Trans MOSFET N-CH 30V 16A 8-Pin Power 33 T/R
RENESAS - ICL7660AIBAZA-T - Régulateur de tension pompe de charge DC/DC réglable, 1,5V à 12V, -12V à -1,5V/45mA, NSOIC-8
This device has been designed specifically to improve theefficiency of DC/DC converters. Using new techniques inMOSFET construction, the various components of gate chargeand capacitance have been optimized to reduce switchinglosses. Low gate resistance and very low Miller charge enableexcellent performance with both adaptive and fixed dead timegate drive circuits. Very low rDS(on) has been maintained toprovide an extremely versatile device.
Product Comparison
The three parts on the right have similar specifications to FDMC8676.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lifecycle Status
    Mount
    Number of Pins
    Weight
    Published
    ECCN Code
    Subcategory
    Number of Channels
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    Factory Lead Time
    Resistance
    Additional Feature
    Threshold Voltage
    Drain to Source Breakdown Voltage
    REACH SVHC
    Radiation Hardening
    Lead Free
    Max Junction Temperature (Tj)
    Nominal Vgs
    View Compare
  • FDMC8676
    FDMC8676
    Surface Mount
    8-PowerTDFN
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Obsolete
    1 (Unlimited)
    5
    NICKEL PALLADIUM GOLD
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    unknown
    30
    8
    R-PDSO-N5
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2.3W Ta 41W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    5.9m Ω @ 14.7A, 10V
    3V @ 250μA
    1.935pF @ 15V
    16A Ta 18A Tc
    30nC @ 10V
    30V
    4.5V 10V
    ±20V
    16A
    0.0059Ohm
    60A
    30V
    216 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC612PZ
    Surface Mount
    8-PowerWDFN
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Obsolete
    1 (Unlimited)
    5
    Nickel/Palladium/Gold (Ni/Pd/Au)
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    S-PDSO-N5
    -
    1
    -
    2.3W Ta 26W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    8.4m Ω @ 14A, 4.5V
    1.5V @ 250μA
    7995pF @ 10V
    14A Ta
    74nC @ 4.5V
    20V
    2.5V 4.5V
    ±12V
    40A
    -
    50A
    20V
    -
    RoHS Compliant
    CONSULT SALES OFFICE (Last Updated: 1 week ago)
    Surface Mount
    8
    180mg
    2017
    EAR99
    Other Transistors
    1
    Single
    2.3W
    26 ns
    52ns
    81 ns
    96 ns
    14A
    MO-240BA
    12V
    750μm
    3.3mm
    3.3mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC6675BZ
    Surface Mount
    8-PowerWDFN
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    Nickel/Palladium/Gold (Ni/Pd/Au)
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    -
    -
    S-PDSO-N5
    -
    1
    -
    2.3W Ta 36W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    14.4m Ω @ 9.5A, 10V
    3V @ 250μA
    2865pF @ 15V
    9.5A Ta 20A Tc
    65nC @ 10V
    30V
    4.5V 10V
    ±25V
    40A
    -
    32A
    -
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 5 days ago)
    Surface Mount
    8
    200mg
    2010
    EAR99
    Other Transistors
    -
    Single
    2.3W
    11 ns
    10ns
    26 ns
    44 ns
    9.5A
    -
    25V
    750μm
    3.3mm
    3.3mm
    23 Weeks
    14.4MOhm
    ULTRA-LOW RESISTANCE
    -1.9V
    -30V
    No SVHC
    No
    Lead Free
    -
    -
  • FDMC8651
    Surface Mount
    8-PowerTDFN
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    Nickel/Palladium (Ni/Pd)
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    S-PDSO-N5
    Not Qualified
    1
    -
    2.3W Ta 41W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    -
    2.5V 4.5V
    ±12V
    64A
    -
    60A
    -
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 1 day ago)
    Surface Mount
    8
    32.13mg
    -
    EAR99
    FET General Purpose Power
    1
    Single
    2.3W
    18 ns
    9ns
    6 ns
    35 ns
    15A
    -
    12V
    1.05mm
    3.3mm
    3.3mm
    34 Weeks
    6.1MOhm
    -
    800mV
    30V
    No SVHC
    -
    Lead Free
    150°C
    1.1 V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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