Fairchild/ON Semiconductor FDMC8676
- Part Number:
- FDMC8676
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3554482-FDMC8676
- Description:
- MOSFET N-CH 30V 16A POWER33
- Datasheet:
- FDMC8676
Fairchild/ON Semiconductor FDMC8676 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8676.
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- Terminal FinishNICKEL PALLADIUM GOLD
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeR-PDSO-N5
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.3W Ta 41W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.9m Ω @ 14.7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.935pF @ 15V
- Current - Continuous Drain (Id) @ 25°C16A Ta 18A Tc
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)16A
- Drain-source On Resistance-Max0.0059Ohm
- Pulsed Drain Current-Max (IDM)60A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)216 mJ
- RoHS StatusROHS3 Compliant
FDMC8676 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 216 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.935pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [16A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 60A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDMC8676 Features
the avalanche energy rating (Eas) is 216 mJ
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
FDMC8676 Applications
There are a lot of Rochester Electronics, LLC
FDMC8676 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 216 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.935pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [16A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 60A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDMC8676 Features
the avalanche energy rating (Eas) is 216 mJ
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
FDMC8676 Applications
There are a lot of Rochester Electronics, LLC
FDMC8676 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
FDMC8676 More Descriptions
Trans MOSFET N-CH 30V 16A 8-Pin Power 33 T/R
RENESAS - ICL7660AIBAZA-T - Régulateur de tension pompe de charge DC/DC réglable, 1,5V à 12V, -12V à -1,5V/45mA, NSOIC-8
This device has been designed specifically to improve theefficiency of DC/DC converters. Using new techniques inMOSFET construction, the various components of gate chargeand capacitance have been optimized to reduce switchinglosses. Low gate resistance and very low Miller charge enableexcellent performance with both adaptive and fixed dead timegate drive circuits. Very low rDS(on) has been maintained toprovide an extremely versatile device.
RENESAS - ICL7660AIBAZA-T - Régulateur de tension pompe de charge DC/DC réglable, 1,5V à 12V, -12V à -1,5V/45mA, NSOIC-8
This device has been designed specifically to improve theefficiency of DC/DC converters. Using new techniques inMOSFET construction, the various components of gate chargeand capacitance have been optimized to reduce switchinglosses. Low gate resistance and very low Miller charge enableexcellent performance with both adaptive and fixed dead timegate drive circuits. Very low rDS(on) has been maintained toprovide an extremely versatile device.
The three parts on the right have similar specifications to FDMC8676.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLifecycle StatusMountNumber of PinsWeightPublishedECCN CodeSubcategoryNumber of ChannelsElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)HeightLengthWidthFactory Lead TimeResistanceAdditional FeatureThreshold VoltageDrain to Source Breakdown VoltageREACH SVHCRadiation HardeningLead FreeMax Junction Temperature (Tj)Nominal VgsView Compare
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FDMC8676Surface Mount8-PowerTDFNYESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesObsolete1 (Unlimited)5NICKEL PALLADIUM GOLDMOSFET (Metal Oxide)DUALNO LEAD260unknown308R-PDSO-N5COMMERCIAL1SINGLE WITH BUILT-IN DIODE2.3W Ta 41W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5.9m Ω @ 14.7A, 10V3V @ 250μA1.935pF @ 15V16A Ta 18A Tc30nC @ 10V30V4.5V 10V±20V16A0.0059Ohm60A30V216 mJROHS3 Compliant-------------------------------
-
Surface Mount8-PowerWDFN-SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesObsolete1 (Unlimited)5Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIED-NOT SPECIFIED-S-PDSO-N5-1-2.3W Ta 26W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING8.4m Ω @ 14A, 4.5V1.5V @ 250μA7995pF @ 10V14A Ta74nC @ 4.5V20V2.5V 4.5V±12V40A-50A20V-RoHS CompliantCONSULT SALES OFFICE (Last Updated: 1 week ago)Surface Mount8180mg2017EAR99Other Transistors1Single2.3W26 ns52ns81 ns96 ns14AMO-240BA12V750μm3.3mm3.3mm----------
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Surface Mount8-PowerWDFN-SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)DUAL-----S-PDSO-N5-1-2.3W Ta 36W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING14.4m Ω @ 9.5A, 10V3V @ 250μA2865pF @ 15V9.5A Ta 20A Tc65nC @ 10V30V4.5V 10V±25V40A-32A--ROHS3 CompliantACTIVE (Last Updated: 5 days ago)Surface Mount8200mg2010EAR99Other Transistors-Single2.3W11 ns10ns26 ns44 ns9.5A-25V750μm3.3mm3.3mm23 Weeks14.4MOhmULTRA-LOW RESISTANCE-1.9V-30VNo SVHCNoLead Free--
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Surface Mount8-PowerTDFN-SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5Nickel/Palladium (Ni/Pd)MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIED-NOT SPECIFIED-S-PDSO-N5Not Qualified1-2.3W Ta 41W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING6.1m Ω @ 15A, 4.5V1.5V @ 250μA3365pF @ 15V15A Ta 20A Tc27.2nC @ 4.5V-2.5V 4.5V±12V64A-60A--ROHS3 CompliantACTIVE (Last Updated: 1 day ago)Surface Mount832.13mg-EAR99FET General Purpose Power1Single2.3W18 ns9ns6 ns35 ns15A-12V1.05mm3.3mm3.3mm34 Weeks6.1MOhm-800mV30VNo SVHC-Lead Free150°C1.1 V
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