Fairchild/ON Semiconductor FDMC86340

Name: FDMC86340
Brand: Fairchild/ON Semiconductor
SKU: 2478779-FDMC86340
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMC86340

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478779-FDMC86340

Description:: MOSFET N-CH 80V 48A POWER33

ECAD Model:

Datasheet:: FDMC86340

Specifications

Fairchild/ON Semiconductor FDMC86340 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86340.

Lifecycle Status
ACTIVE (Last Updated: 23 hours ago)
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
152.7mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 54W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
54W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3885pF @ 40V
Current - Continuous Drain (Id) @ 25°C
14A Ta 48A Tc
Gate Charge (Qg) (Max) @ Vgs
53nC @ 10V
Rise Time
16ns
Drive Voltage (Max Rds On,Min Rds On)
8V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
23 ns
Continuous Drain Current (ID)
48A
JEDEC-95 Code
MO-240BA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0065Ohm
Drain to Source Breakdown Voltage
80V
Pulsed Drain Current-Max (IDM)
200A
Height
750μm
Length
3.4mm
Width
3.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

FDMC86340 Description
FDMC86340 is an N-channel MOSFET manufactured by onsemi. The N-Channel MOSFET FDMC86340 is produced using an advanced Power Trench? process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance yet maintains superior switching performance. The FDMC86340 is offered in the Power-33-8package. It is specified for operation from –55°C to 150°C.

FDMC86340 Features
Shielded Gate MOSFET Technology
Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A
Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A
High-performance technology for extremely low RDS(on)
Termination is Lead-free
RoHS Compliant

FDMC86340 Applications
cellular phones and laptop computers
LED power sources
photovoltaic systems
wind turbines
vacuum tube

FDMC86340 More Descriptions

PT7 N-ch 80/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
N-Channel Shielded Gate Power Trench® MOSFET 80V, 48A, 6.5mΩ
MOSFET, N-CH, 48A, 80V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Source Voltage Vds:80V; On Resistance
Power Field-Effect Transistor, 14A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 48A, 80V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.4V; Power Dissipation Pd: 54W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to FDMC86340.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

RoHS Status

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Threshold Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

REACH SVHC

Lead Free

HTS Code

Drain to Source Voltage (Vdss)

Contact Plating

Resistance

Drain Current-Max (Abs) (ID)

View Compare
FDMC86340

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 23 hours ago)

12 Weeks

Surface Mount

Surface Mount

8-PowerWDFN

8

152.7mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 54W Tc

Single

ENHANCEMENT MODE

54W

DRAIN

20 ns

N-Channel

SWITCHING

6.5m Ω @ 14A, 10V

4V @ 250μA

3885pF @ 40V

14A Ta 48A Tc

53nC @ 10V

16ns

8V 10V

±20V

10 ns

23 ns

48A

MO-240BA

20V

0.0065Ohm

80V

200A

750μm

3.4mm

3.4mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMC7660

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

10 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2009

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

14 ns

N-Channel

SWITCHING

2.2m Ω @ 20A, 10V

2.5V @ 250μA

4830pF @ 15V

20A Ta 40A Tc

86nC @ 10V

6.8ns

4.5V 10V

±20V

5.7 ns

36 ns

20A

MO-240BA

20V

0.0022Ohm

30V

200A

1.05mm

3.3mm

3.3mm

-

ROHS3 Compliant

NO LEAD

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

1.7V

200 mJ

1.7 V

No SVHC

Lead Free

-

-

-

-

-

FDMC86340 vs FDMC7660
FDMC8360LET40

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

19 Weeks

Surface Mount

Surface Mount

8-PowerWDFN

-

152.7mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

-

EAR99

Tin (Sn)

-

MOSFET (Metal Oxide)

-

-

-

2.8W Ta 75W Tc

Single

-

-

-

-

N-Channel

-

2.1m Ω @ 27A, 10V

3V @ 250μA

5300pF @ 20V

27A Ta 141A Tc

80nC @ 10V

-

4.5V 10V

±20V

-

-

141A

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

260

not_compliant

NOT SPECIFIED

-

-

-

-

-

-

8541.29.00.95

40V

-

-

-

FDMC86340 vs FDMC8360LET40
FDMC8462

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 11 hours ago)

43 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Active

1 (Unlimited)

5

EAR99

Nickel/Palladium (Ni/Pd)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2W Ta 41W Tc

Single

ENHANCEMENT MODE

2W

DRAIN

12 ns

N-Channel

SWITCHING

5.8m Ω @ 13.5A, 10V

3V @ 250μA

2660pF @ 20V

14A Ta 20A Tc

43nC @ 10V

4ns

4.5V 10V

±20V

3 ns

27 ns

14A

-

20V

-

40V

50A

1.05mm

3.3mm

3.3mm

No

ROHS3 Compliant

-

-

-

-

-

2V

-

-

No SVHC

Lead Free

-

-

Gold

5.8MOhm

64A

FDMC86340 vs FDMC8462

Certification

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FDMC86340 Specification

Part Number	Manufacturers	Description	Stock	Price
FDMC86340ET80 DISTI #V72:2272_06337926	ON Semiconductor	PT7 N-CH 80/20V POWER TRENCH M	2044	1 $2.3234 10 $1.7807 25 $1.7629 100 $1.4011 250 $1.3867 500 $1.2034 1000 $1.1908
FDMC86340 DISTI #V36:1790_06337925	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin Power QFN EP T/R	0	3000 $0.8489 30000 $0.8399 300000 $0.7867 1500000 $0.7575 3000000 $0.7572
FDMC86340 DISTI #V72:2272_06337925	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin Power QFN EP T/R	0
FDMC86340ET80 DISTI #V36:1790_06337926	ON Semiconductor	PT7 N-CH 80/20V POWER TRENCH M	0	3000 $1.03 30000 $1.018 300000 $0.9384 1500000 $0.882 3000000 $0.8808
FDMC86340 DISTI #FDMC86340CT-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant	4373	1 $2.07 10 $1.863 100 $1.4973 500 $1.2302 1000 $1.01931
FDMC86340 DISTI #FDMC86340DKR-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant	4373	1 $2.07 10 $1.863 100 $1.4973 500 $1.2302 1000 $1.01931
FDMC86340 DISTI #FDMC86340TR-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant	3000	3000 $0.92138 6000 $0.88725
FDMC86340ET80 DISTI #FDMC86340ET80CT-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant	0
FDMC86340ET80 DISTI #FDMC86340ET80DKR-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant	0
FDMC86340ET80 DISTI #FDMC86340ET80TR-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant	0	3000 $1.0301
FDMC86340 DISTI #33088335	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin Power QFN EP T/R	66000	3000 $0.8489
FDMC86340ET80 DISTI #31339539	ON Semiconductor	PT7 N-CH 80/20V POWER TRENCH M	1944	7 $2.3234
FDMC86340 DISTI #FDMC86340	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin Power 33 T/R - Tap RoHS: Compliant	3000	3000 $0.8489 6000 $0.8439 12000 $0.8329 18000 $0.8219 30000 $0.8019
FDMC86340 DISTI #FDMC86340	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin Power 33 T/R (Alt: RoHS: Compliant	0	3000 $1.1529 6000 $0.9599 12000 $0.8859 18000 $0.8229 30000 $0.7679
FDMC86340 DISTI #FDMC86340	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin Power 33 T/R - Bul	0	348 $0.9409 696 $0.9349 1044 $0.9229 1740 $0.9109 3480 $0.8879
FDMC86340ET80 DISTI #FDMC86340ET80	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin PQFN T/R (Alt: FDM RoHS: Compliant	0	3000 $1.5789 6000 $1.2919 12000 $1.1039 18000 $1.0029 30000 $0.9569
FDMC86340ET80 DISTI #FDMC86340ET80	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin PQFN T/R - Tape an RoHS: Compliant	0	3000 $0.9489 6000 $0.9429 12000 $0.9309 18000 $0.9189 30000 $0.8969
FDMC86340 DISTI #08X5809	ON Semiconductor	FET 80V 6.5 MOHM PQFN33 / REEL	0	1 $0.879 9000 $0.847
FDMC86340 DISTI #07AH3920	ON Semiconductor	MOSFET, N-CH, 48A, 80V, PQFN, Transistor Polarity	0	1 $1.93 10 $1.64 25 $1.53 50 $1.42 100 $1.31 250 $1.23 500 $1.14 1000 $0.952
FDMC86340 DISTI #512-FDMC86340	ON Semiconductor	MOSFET 80V N Chan Shielded Gate Power Trench RoHS: Compliant	2319	1 $1.91 10 $1.62 100 $1.3 500 $1.13 1000 $0.943 3000 $0.878 6000 $0.846 9000 $0.813
FDMC86340ET80 DISTI #512-FDMC86340ET80	ON Semiconductor	MOSFET FET 80V 6.5 MOHM PQFN33 RoHS: Compliant	1040	1 $2.13 10 $1.81 100 $1.45 500 $1.27 1000 $1.05 3000 $0.982 6000 $0.945
FDMC86340 DISTI #	ON Semiconductor	Power Field-Effect Transistor, 14A I(D), 80V, 0.00 RoHS: Compliant	3000	1 $1.17 25 $1.08 100 $1.04 500 $1 1000 $0.95
FDMC86340 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 14A I(D), 80V, 0.00 RoHS: Compliant	1020	1 $1.17 25 $1.08 100 $1.04 500 $1 1000 $0.95
FDMC86340 DISTI #8648237P	ON Semiconductor	MOSFET N-CH 80V 48A SHIELDED GATE PQFN8, RL	2440	50 $0.61
FDMC86340 DISTI #3003975	ON Semiconductor	MOSFET, N-CH, 48A, 80V, PQFN RoHS: Compliant	3000	1 $2.31 10 $2.02 100 $1.79 250 $1.62 500 $1.47 1000 $1.34
FDMC86340 DISTI #3003975	ON Semiconductor	MOSFET, N-CH, 48A, 80V, PQFN	3000	1 $1.62 10 $1.24 100 $0.969 250 $0.908 500 $0.846

FDMC863~~(4)~~
FDMC86~~(32)~~
FDMC8~~(67)~~
FDMC~~(78)~~
FDM~~(86)~~

Fairchild/ON Semiconductor FDMC86340

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