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FDMC86324

Fairchild/ON Semiconductor FDMC86324

Part Number:
FDMC86324
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2483909-FDMC86324
Description:
MOSFET N-CH 80V 20A POWER33
ECAD Model:
Datasheet:
FDMC86324

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Specifications
Fairchild/ON Semiconductor FDMC86324 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86324.
  • Lifecycle Status
    ACTIVE (Last Updated: 22 hours ago)
  • Factory Lead Time
    5 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    32.13mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2008
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium (Ni/Pd)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 41W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    41W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    965pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    7A Ta 20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 10V
  • Rise Time
    4ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4 ns
  • Turn-Off Delay Time
    14 ns
  • Continuous Drain Current (ID)
    7A
  • Threshold Voltage
    3.1V
  • JEDEC-95 Code
    MO-240BA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7A
  • Drain-source On Resistance-Max
    0.023Ohm
  • Drain to Source Breakdown Voltage
    80V
  • Pulsed Drain Current-Max (IDM)
    30A
  • Avalanche Energy Rating (Eas)
    72 mJ
  • Height
    1.05mm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMC86324 Description
FDMC86324 is a single N-channel MOSFET from the manufacturer ON Semiconductor. Fairchild Semiconductor's innovative PowerTrench? technology produces the FDMC86324 N-channel MOSFET. It was specifically designed to reduce ON-state resistance while maintaining great switching performance.
FDMC86324 Features
? Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A ? Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4 A ? Low Profile - 1 mm max in Power 33
? 100% UIL Tested
? RoHS Compliant

FDMC86324 Applications
? Power Management ? Industrial
? DC-DC Conversion
? Switch application

FDMC86324 More Descriptions
N-Channel Power Trench® MOSFET 80V, 20A, 23mΩ
Trans MOSFET N-CH 80V 7A 8-Pin QFN EP T/R - Tape and Reel
Power Field-Effect Transistor, 7A I(D), 80V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 80V, 20A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0191ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Product Comparison
The three parts on the right have similar specifications to FDMC86324.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Nominal Vgs
    Lead Free
    Resistance
    Additional Feature
    Drain to Source Voltage (Vdss)
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Channels
    Max Junction Temperature (Tj)
    View Compare
  • FDMC86324
    FDMC86324
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 22 hours ago)
    5 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2008
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    41W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    23m Ω @ 7A, 10V
    4V @ 250μA
    965pF @ 50V
    7A Ta 20A Tc
    18nC @ 10V
    4ns
    6V 10V
    ±20V
    4 ns
    14 ns
    7A
    3.1V
    MO-240BA
    20V
    7A
    0.023Ohm
    80V
    30A
    72 mJ
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC86244
    FDMC86244
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 18 hours ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    26W
    DRAIN
    5.3 ns
    N-Channel
    SWITCHING
    134m Ω @ 2.8A, 10V
    4V @ 250μA
    345pF @ 75V
    2.8A Ta 9.4A Tc
    5.9nC @ 10V
    1.5ns
    6V 10V
    ±20V
    2.3 ns
    9.9 ns
    9.4A
    2.6V
    -
    20V
    -
    -
    150V
    -
    -
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    2.6 V
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDMC86324 vs FDMC86244
  • FDMC6675BZ
    FDMC6675BZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    200mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    14.4m Ω @ 9.5A, 10V
    3V @ 250μA
    2865pF @ 15V
    9.5A Ta 20A Tc
    65nC @ 10V
    10ns
    4.5V 10V
    ±25V
    26 ns
    44 ns
    9.5A
    -1.9V
    -
    25V
    40A
    -
    -30V
    32A
    -
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    Lead Free
    14.4MOhm
    ULTRA-LOW RESISTANCE
    30V
    -
    -
    -
    -
    -
    -
    FDMC86324 vs FDMC6675BZ
  • FDMC8651
    FDMC8651
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    34 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    9ns
    2.5V 4.5V
    ±12V
    6 ns
    35 ns
    15A
    800mV
    -
    12V
    64A
    -
    30V
    60A
    -
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    -
    ROHS3 Compliant
    1.1 V
    Lead Free
    6.1MOhm
    -
    -
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1
    150°C
    FDMC86324 vs FDMC8651
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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